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Roca i Cabarrocas Pere
DIRECTEUR DE RECHERCHE

Contact

Office : 406:10-08
Telephone : +33169334314
Department/Laboratory/Direction : CA/DER/LAB/PICM
Additional function :
PROFESSEUR
+33169334314

Biography and Current Works

Mission: 

Director of the Laboratory of Physics of Interfaces and Thin Films - LPICM

Director of the French Federation on Photovoltaics - FedPV

Member of the Scientific Commitee of IPVF (Institut Photovoltaïque Ile-de- France)

Biography: 

Prof. Pere Roca i Cabarrocas, is an Electrical Engineer from the “Universitat Politécnica de Barcelona”. In 1984 he moved to Paris, where he received his PhD from University Paris VII in 1988. After a post-doc position in Princeton University he joined the Laboratory of Physics of Interfaces and Thin Films at Ecole Polytechnique where he holds a position as a CNRS director of research and as a professor. Since 2012 he is the director of LPICM and the French Federation on PV since 2014. He has thirty years of experience in the field of plasma deposition of silicon based thin films for large area electronic applications. His topics cover the study of RF discharges for the deposition of amorphous, polymorphous and microcrystalline silicon thin films. He has used in-situ diagnostic techniques such as UV-visible ellipsometry, Kelvin probe and time resolved microwave conductivity to understand the growth of these materials and apply them to the production of devices such as solar cells, thin film transistors, particle detectors, sensors,… More recently he has been applying silicon nanocrystals synthesized in the plasma as building blocks for the epitaxial growth of silicon thin films and Si/Ge quantum wells. On the other hand, he has extended the plasma processes to the growth of vertical silicon nanowires for third generation solar cells and of horizontal ones for planar electronic applications. He was the recipient of the Médaille Blondel in 2004, of the Innovation Award at Ecole Polytechnique in 2009 and the Silver medal from CNRS in 2011. Since 2016 he is invited professor at Nara Institute of Technology. He has over 450 papers in peer reviewed journals, holds 34 patents and has supervised 47 PhD students.

Teaching: 

Experimental lab course on PV for Second year students PH589

Experimental lab course on PV

Thin Film Photovoltaics. Masters STEEM and REST PHY661

 

Research: 

Low temperature plasma processes for silicon thin-film deposition. Studies on the formation of silicon clusters/nanocrystals and their use as building blocks for film growth. Silicon and Germanium nanowires by plasma-assisted vapour-liquid-solid process. Low temperature (~200 °C) epitaxial growth of Si, Ge and SiGe on c-Si and III-V wafers by plasma CVD.
- In-situ diagnostics for the control of the plasma/surface interaction and understanding thin film deposition processes : spectroscopic ellipsometry, Kelvin probe, TRMC, PL.
- Optical and electronic properties of silicon thin films and alloys : a-Si:H, nc-Si:H, pm-Si:H, a-SiGe:H, silicon nanowires and epitaxial growth at low temperature by PECVD.
- Depostion and characterization of thin film devices : solar cells, thin film transistors, electroluminescent diodes, sensors,…

Main Publications and Links

Publications: 

1       A.M. Antoine, B. Drévillon, and P. Roca i Cabarrocas: "Growth processes of RF glow discharge deposited a-Ge:H films". J. of Non Cryst. Solids 77&78 (1985) 769.

 

2       A.M. Antoine, B. Drévillon, and P. Roca i Cabarrocas: "In-situ investigation of the growth of RF glow discharge deposited amorphous germanium and silicon films". J. of Appl. Phys. 61 (1987) 2501.

 

3       I. Chambouleyron, A. Lloret, P. Roca i Cabarrocas, Journal of G. Sardin, and J. Andreu: "Hydrogen content, transport properties, and light degradation of a-Si:H films containing artificially generated interfaces". Solar Energy Materials 17 (1988) 1.

 

4       P. Roca i Cabarrocas, L. Chahed, B. Drévillon, and M.L. Thèye: "Light induced effects on the optical absorption of a-Si:H". J. of Non Cryst. Solids 104 (1988) 59.

 

5       J. Perrin, P. Roca i Cabarrocas, B. Allain, and J.M. Friedt: "a-Si:H deposition from SiH4 and Si2H6 RF discharges: pressure and temperature dependence of film growth in relation to the a-g discharge transition". Jpn. J. of Appl. Phys. 27 (1988) 2041.

 

6       B. Drévillon, S. Kumar, P. Roca i Cabarrocas, and J.M. Siefert : "In-situ investigation of the opto-electronic properties of transparent conducting oxide/amorphous silicon interfaces". Appl. Phys. Lett. 54 (1989) 2088.

 

7       P. Roca i Cabarrocas, S. Kumar, and B. Drévillon: "In situ study of the thermal decomposition of B2H6 by combining spectroscopic ellipsometry and Kelvin probe measurements". J. Appl. Phys. 66 (1989) 3286.

 

  1. P. Roca i Cabarrocas, J.Z. Liu, H.R. Park, A. Maruyama, and S. Wagner: "Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge". J of Non Cryst. Solids 114, 190 (1989).

 

9       N. Hata, S. Wagner, P. Roca i Cabarrocas, and M. Favre: "Deposition-induced defect profiles in amorphous hydrogenated silicon". Appl. Phys. Lett. 56 (1990) 2448.

 

10     H. R. Park, J. Z. Liu, P. Roca i Cabarrocas, A. Maruyama, M. Isomura, S. Wagner, J. R. Abelson, and F. Finger: "Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon". Appl. Phys. Lett. 57 (1990) 1440.

 

11     M.L. Thèye, L. Chahed, P. Roca i Cabarrocas, and K. Zellama: "Studies by photothermal deflection spectroscopy of defect formation in a-Si:H". Phil. Mag. B, Vol. 63, No. 1 (1991) 143.

 

12     P. Roca i Cabarrocas, P. Morin, V. Chu, J. Conde, J.Z. Liu, H.R. Park, and S. Wagner: "Opto-electronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias". J. Appl. Phys. 69(5) (1991) 2942.

 

13     P. Roca i Cabarrocas, J.B. Chévrier, J. Huc, A. Lloret, J.Y. Parey, and J.P.M. Schmitt: "A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition". J. of Vac. Sci. and Technol. A9 (1991) 2331.

 

14     K. Zellama, H. Labidi, P. Germain, D. Lortigues, L. Chahed, M.L. Thèye, P. Roca i Cabarrocas, and C. Godet: "Experimental studies of the light-induced defects in undoped hydrogenated amorphous silicon as a function of deposition conditions". Thin Solid Films, 204 (1991) 385.

 

15     M. Stchakovsky, B. Drévillon, and P. Roca i Cabarrocas: "In-situ investigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry". J. Appl. Phys. 70 (1991) 2132.

 

  1. P. Vilató, B. Drévillon, S. Kumar, and P. Roca i Cabarrocas: "In-situ investigation of the transparent conducting oxide surface modifications during amorphous silicon growth in a silane plasma". Rivista Sperimentale del Vetro (1991).

 

  1. R. Meaudre, M. Meaudre, P. Roca i Cabarrocas, S. Tanidi, Y. Bouizem, and M.L. Thèye: "Absence of thermal quenching effects in undoped amorphous silicon deposited by PECVD of He-diluted silane". J. of Non Cryst. Solids 137&138 (1991).

 

  1. P. Roca i Cabarrocas, Y. Bouizem, and M.L. Thèye: "Defect density and hydrogen bonding in hydrogenated amorphous silicon as functions of substrate temperature and deposition rate". Phil. Mag. B 65 (1992) 1025.

 

  1. K. Zellama, H. Labidi, P. Germain, H. J. von Bardeleben, L. Chahed, M.L. Thèye, P. Roca i Cabarrocas, C. Godet, and J.P. Stoquert: "Systematic study of light-induced effects in hydrogenated amorphous silicon". Phys. Rev. B45 (1992) 13314.

 

19     P. Roca i Cabarrocas, Z. Djebbour, J.P. Kleider, C. Longeaud, D. Mencaraglia, J. Sib, Y. Bouizem, M.L. Thèye, G.Sardin, and J.P. Stoquert: "Hydrogen, microstructure and defect density of hydrogenated amorphous silicon". J. Phys. I France 2 (1992) 1979.

 

20     J.P. Kleider, C. Longeaud, and P. Roca i Cabarrocas: "Experimental evidence for the annealing of surface defects in a-Si:H during deposition". J. Appl. Phys. 72 (1992) 4727.

 

21     C. Godet, P. Roca i Cabarrocas, S.C. Gujrathi, and P. Burret: "Hydrogen profiling by elastic recoil detection in microcrystalline germanium thin films". J. Vac. Sci. and Technol. A 10 (6) (1992) 3517.

 

22     V. Yakovlev, B. Drévillon, N. Layadi, and P. Roca i Cabarrocas: "Real time ellipsometry investigation of Pd2Si formation induced by exposure of Palladium to silane". J. Appl. Phys. 74 (1993) 2535.

 

23     N. Layadi, P. Roca i Cabarrocas, V. Yakovlev, and B. Drévillon: "Effects of UV light on the deposition kinetics and optoelectronic properties of a-Si:H films deposited by RF glow discharge". Appl. Surface Science 69 (1993) 262.

 

24     Ch. Böhm, J. Perrin, and P. Roca i Cabarrocas: "Ion-induced secondary electron emission in SiH4 glow discharge, and temperature dependence of a-Si:H deposition rate. J. Appl. Phys.73 (1993) 2578.

 

25     R. Meaudre, M. Meaudre, S. Vignoli, P. Roca i Cabarrocas, Y. Bouizem, and M.L. Thèye: "Stability of hydrogenated amorphous silicon deposited by PECVD from He-diluted silane". Phil. Mag. B 67 (1993) 497.

 

26     R. Meaudre, M. Meaudre, and P. Roca i Cabarrocas: "Thermal quenching and relaxation in doped hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from He-diluted silane". Appl. Phys. Lett. 62 (1993) 594.

 

  1. N. Layadi, P. Roca i Cabarrocas, V. Yakovlev, and B. Drévillon: "Study by real time ellipsometry of the growth of amorphous and microcrystalline silicon thin films by combining glow discharge decomposition and UV light irradiation". Thin Solid Films, 233 (1993) 281.

 

  1. J.Z. Liu, G. Lewen, J.P. Conde, and P. Roca i Cabarrocas: "Dual-beam photocurrent spectra in undoped a-Si:H: anomalous band, optical transition energy, and correlation energy". J. Non Cryst. Solids 164-166 (1993) 383.

 

  1. S.J. Jones, Y. Chen, D.L. Williamson, U. Kroll, and P. Roca i Cabarrocas: "The effects of Ar and He dilution of silane plasmas on the microstructure of a-Si:H detected by small-angle X-ray Scattering". J. Non Cryst. Solids, 164-166 (1993) 131

 

  1. P. Roca i Cabarrocas: "Towards high deposition rates of a-Si:H, the limiting parameters". J. Non Cryst. Solids, 164-166 (1993) 37

 

  1. H. Shirai, B. Drévillon, N. Layadi, and P. Roca i Cabarrocas: "In situ visible and infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous silicon". J. Non Cryst. Solids, 164-166 (1993) 119.

 

  1. K. Zellama, J.H. von Bardeleben, V. Quillet, Y. Bouizem, P. Sládek, M.L. Thèye, and P. Roca i Cabarrocas: " Experimental study of disorder and defects in undoped a-Si:H as a function of annealing and hydrogen evolution". J. Non Cryst. Solids, 164-166 (1993) 285.

 

  1. S. Vignoli, R. Meaudre, M. Meaudre, L. Chanel, and P. Roca i Cabarrocas: "Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures". J. Non Cryst. Solids, 164-166 (1993) 191.

 

  1. J.P. Kleider, C. Longeaud, and P. Roca i Cabarrocas: "Influence on the transport properties of the deposition temperature of a-Si:H films deposited from mixtures of silane in helium at high deposition rates". J. Non Cryst. Solids, 164-166 (1993) 403.

 

  1. N. Layadi, P. Roca i Cabarrocas, J. Huc, J.Y. Parey, and B. Drévillon: "In-situ excimer laser induced crystallization of hydrogenated amorphous silicon thin films". Solid State Phenomena 37-38 (1994) 281.

 

  1. P. Roca i Cabarrocas and A. Lloret: "Optical and Electronic properties of hydrogenated amorphous silicon films deposited by square wave modulated rf discharges of silane-He mixtures". Applied Physics A 58 (1994) 365.

 

  1. N. Layadi, P. Roca i Cabarrocas, W. Marine, M. Gerri, V. Spousta, J. Perrière: "Excimer laser assisted rf glow discharge deposition of amorphous and microcrystalline thin films". Applied Physics A 58 (1994), 507-512.

 

  1. H.C. Neitzert, N. Layadi, P. Roca i Cabarrocas, and R. Vanderhaghen: "In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium and helium plasmas". Appl. Phys. Lett. 65 (1994) 1260.

 

  1. P. Roca i Cabarrocas: "Deposition of intrinsic, p-type and n-type hydrogenated amorphous silicon films at 50 °C". Appl. Phys. Lett. 65 (1994) 1674.

 

  1. H.C. Neitzert, N. Layadi, P. Roca i Cabarrocas, R.Vanderhaghen, and M. Kunst: "In-situ measurements of changes in the structure and in the excess charge carrier kinetics at the silicon surface during hydrogen and helium plasma exposure". J. Appl. Phys. 78 (1995) 1438.

 

  1. C. Godet, N. Layadi, and P. Roca i Cabarrocas: "Role of mobile hydrogen in the amorphous silicon recrystallization". Appl. Phys. Lett. 66 (1995) 3146.

 

  1. P. Roca i Cabarrocas, N. Layadi, T. Heitz, B. Drévillon, and I. Solomon: "Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences". Appl. Phys. Lett. 66 (1995) 3609.

 

  1. J.P. Kleider, C. Longeaud, M. Barranco-Diaz, P. Morin, and P. Roca i Cabarrocas: "Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates". J. Apl. Phys. 78 (1995) 317.

 

  1. N. Layadi, P. Roca i Cabarrocas, B. Drévillon, and I. Solomon: "Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment". Phys. Rev. B 52 (1995) 5136.

 

  1. J. Dutta, I.M. Reaney, P. Roca i Cabarrocas, and H. Hofmann: "Multilayered silicon/silicon nitride thin films deposited by plasma-CVD: effects of crystallization". NanoStrucutred Materials 6 (1995) 843.

 

  1. R. Darwich, P. Roca i Cabarrocas, S. Vallon, R. Ossikovski, P. Morin, and K. Zellama: "Observation by infrared transmission spectroscopy and infrared ellipsometry of a new hydrogen bond during light-soaking of a-Si:H". Phil Mag B 72, 363 (1995).

 

  1. A. Hadjadj, P. Roca i Cabarrocas, and B. Equer: "Analytical compensation of stray capacitance effect in Kelvin probe measurements". Rev. Sci. Instrum. 66 (1995) 5272.

 

  1. K. Zellama, L. Chahed, P. Sládek, M. L. Thèye, J.H. von Bardeleben, and P. Roca i Cabarrocas: "Hydrogen effusion induced structural changes and defects in a-Si:H films: Dependence upon the film microstructure". Phys. Rev. B 53 (1996) 3804.

 

  1. C. Guedj, J. Boulmer, D. Bouchier, C. Clerc, G. Calvarin, C. Godet, P. Roca i Cabarrocas, F. Houzé, and D. Mencaraglia: "Bulk and surface structural properties of Si1-x-yGexCy layers processed on Si (001) by pulsed laser induced epitaxy". Applied Surface Science, 102 (1996) 28.

 

  1. P. Roca i Cabarrocas, P. Gay, and A. Hadjadj: "Experimental evidence for nanoparticle deposition in continuous argon-silane plasmas: Effects of silicon nanoparticles on film properties". J. Vac. Sci. and Technol. A14 (1996) 655.

 

  1. C. Godet and P. Roca i Cabarrocas: "Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H". J. Appl. Phys. 80 (1996) 97.

 

  1. P. Roca i Cabarrocas, S. Hamma, A. Hadjadj, J. Bertomeu, and J. Andreu: "New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy". Appl. Phys. Lett. 69 (1996) 529.

 

  1. J. Ebothé, P. Roca i Cabarrocas, C. Godet, and B. Equer: "Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process". Mat. Science and Engeneering B42 (1996) 105.

 

  1. M. Cuniot, J. Dixmier, and P. Roca i Cabarrocas: "Improved mobility-lifetime product of holes in a-Si:H n-i-p devices: A consequence of structural relaxation ?" J. Non Cryst. Solids, 198-200 (1996) 540.

 

  1. P. Roca i Cabarrocas, N. Layadi, B. Drévillon, and I. Solomon: "Microcrystalline silicon growth by the layer-by-layer technique: Long-term evolution and nucleation mechanisms". J. Non Cryst. Solids, 198-200, (1996) 871-874.

 

  1. C. Godet, P. Morin, and P. Roca i Cabarrocas: "Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H". J. Non Cryst. Solids, 198-200 (1996) 449.

 

  1. S. Vignoli, R. Meaudre, M. Meaudre, P. Roca i Cabarrocas, C. Godet, and P. Morin: "Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions". J. Non Cryst. Solids, 198-200 (1996) 474.

 

  1. Ch. Bellin, P. Roca i Cabarrocas, K. Zellama, M.L. Thèye, and G. Loupias: "Compton profiles of amorphous and hydrogenated amorphous silicon". Solid State Communications 104 (1997) 193.

 

  1. S. Hamma and P. Roca i Cabarrocas: "In-situ correlation between optical and electrical properties of intrinsic and n-type microcrystalline silicon films". J. Appl. Phys. 81 (1997) 7282.

 

  1. A. Hadjadj, P. Roca i Cabarrocas, and B. Equer: "In-situ Kelvin probe study of boron doping of a-Si:H". Phil. Mag. B 76 (1997) 941.

 

  1. S. Hamma and P. Roca i Cabarrocas: "Long range effects of hydrogen during microcrystalline silicon growth". Thin Solid Films 296 (1997) 11.

 

  1. R. Brenot, R. Vanderhaghen, B. Drévillon, I. French, and P. Roca i Cabarrocas: "Time resolved microwave conductivity measurements for the characterization of transport properties in thin film microcrystalline silicon". Thin Solid Films 296 (1997) 94.

 

  1. G.E.N. Landweer and P. Roca i Cabarrocas: "Photoemission measurements on aluminum and amorphous silicon by pulsed laser illumination in presence of a plasma". Applied Surface Science 109/110 (1997) 579.

 

  1. A. Hadjadj, M. Favre, B. Equer, and P. Roca i Cabarrocas: " In-situ Kelvin Probe and ellipsometry study of the doping of a-Si:H and a-SiC:H layers: Correlation with solar cell parameters". Solar Energy Materials and Solar Cells 51 (1998) 145.

 

  1. A. Hadjadj, P. St'ahel, P. Roca i Cabarrocas, V. Paret, Y. Bounouh, and J.C. Martin: "Optimum doping level in a-Si:H and a-SiC:H materials". J. Appl. Phys. 83 (1998) 830.

 

  1. P. Sladek, P. St'ahel, P. Roca i Cabarrocas, and P. Morin: "Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant photocurrent method". Phil. Mag.B 77 (1998) 1049.

 

  1. P. Roca i Cabarrocas, N. Layadi, M. Kunst, C. Clerc, and H. Bernas: "Optical and transport properties of amorphous and microcrystalline silicon films prepared by excimer laser assisted rf glow discharge deposition". J. Vac. Sci and Technol. A16 (1998) 436.

 

  1. C. Guedj, J. Boulmer, G. Nouet, C. Godet, and P. Roca i Cabarrocas: "New buffer concept inherent to pulsed laser induced epitaxy". Appl. Phys. Lett. 72 (1998) 2292.

 

  1. E. Bertran, S.N. Sharma, G. Viera, J. Costa, P. St'ahel, and P. Roca i Cabarrocas: "Effet of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge". J. Mat. Res. 13 (1998) 2476.

 

  1. P. Roca i Cabarrocas, S. Hamma, S.N. Sharma, J. Costa, and E. Bertran: "Nanoparticle formation in low pressure silane plasmas: Bridging the gap between a-Si:H and µc-Si films". J. Non Cryst. Solids 227-230 (1998) pp. 871-875.

 

  1. S. Hamma and P. Roca i Cabarrocas: "Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution". J. Non Cryst. Solids 227-230 (1998) 852.

 

  1. C. Longeaud, J.P. Kleider, P. Roca i Cabarrocas, S. Hamma, R. Meaudre and M. Meaudre. "Characterization of a new a-Si:H like material: Hydrogenated polymorphous silicon". J. Non Cryst. Solids 227-230 (1998) 96.

 

  1. R. Brenot, P. Bulkin, P. Roca i Cabarrocas, B. Drévillon, and R. Vanderhaghen: In-situ characterization of microcrystalline silicon by Time Resolved Microwave Conductivity". J. Non Cryst. Solids 227-230 (1998) 1001.

 

  1. P. St'ahel, S. Hamma, P. Sladek, and P. Roca i Cabarrocas: "Metastability studies in silicon films: from short-range ordered to medium- and long-range ordered materials". J. Non Cryst. Solids 227-230 (1998) 276.

 

  1. P. Sladek, P. St'ahel, M.L. Thèye, and P. Roca i Cabarrocas: "The hydrogen effusion induced structural changes and defects in a-SiGe:H films: Dependence upon the microstructure". J. Non Cryst. Solids 227-230 (1998) 437.

 

  1. R. Brenot, R. Vanderhaghen, B. Drévillon, and P. Roca i Cabarrocas: "Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth". Appl. Phys. Lett. 74 (1999) 58.

 

  1. P. Roca i Cabarrocas and S. Hamma: "Microcrystalline silicon growth on a-Si:H: Effects of hydrogen". Thin Solid Films 337 (1999) 23.

 

  1. R. Brenot, R. Vanderhaghen, B. Drévillon, T. Mohammed-Brahim, and P. Roca i Cabarrocas : "Contactless electronic transport analysis of microcrystalline silicon" . Thin Solid Films 337 (1999) 63.

 

  1. R. Butté, R. Meaudre, M. Meaudre, S. Vignoli, C. Longeaud, J. P. Kleider, P. Roca i Cabarrocas: "Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon", Philosophical Magazine B79 (1999) 1079.

 

  1. M. Meaudre, R. Meaudre, R. Butté, S. Vignoli, C. Longeaud, J.P. Kleider, P. Roca i Cabarrocas: "Midgap density of states in hydrogenated polymorphous silicon" J. of Appl. Phys. 86 (1999) 946-950.

 

  1. S. Hamma and P. Roca i Cabarrocas: "Determination of the mobility gap of µc-Si:H and of the band discontinuities at the µc-Si:H/a-Si:H interface using in-situ Kelvin probe technique". Appl. Phys. Lett. 74 (1999) 3218.

 

  1. Vignoli, R. Butté, R. Meaudre, M. Meaudre, and P. Roca i Cabarrocas : « Structural properties depicted by optical measurements in hydrogenated polymorphous silicon". J. Phys. Condens. Matter 11 (1999) 8749.

 

  1. J.P. Kleider, C. Longeaud, M. Gauthier, M. Meaudre, R. Meaudre, R. Butté, S. Vignoli, and P. Roca i Cabarrocas. "Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space charge limited current measurements". Appl. Pys. Lett. 75 (1999) 3351.

 

  1. P. Roca i Cabarrocas, R. Brenot, R. Vanderhaghen, B. Drévillon, and I. French: "Stable microcrystalline silicon thin film transistors produced by the layer-by-layer technique". J. Appl. Phys. 86 (1999) 7079.

 

  1. A. Fontcuberta, J. Bertomeu and P. Roca i Cabarrocas. "The role of hydrogen in the formation of microcrystalline silicon". Materials Science & Engineering B 69 (1999) 559.

 

  1. R. Brenot, B. Drévillon, P. Bulkin, P. Roca i Cabarrocas and R. Vanderhaghen. "Process monitoring of semiconductor thin film and interfaces by spectroellipsometry". Applied Surface Science 154-155 (2000) 283.

 

  1. A. Hadjadj, P. Roca i Cabarrocas, and B. Equer : "Mobility edges shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide". Phil Mag. B 80 (2000)1317.

 

  1. A. Hadjadj, L. Boufendi, S. Huet, S. Schelz, P. Roca i Cabarrocas, H. Estrade-Szwarckopf, and B. Rousseau: "Role of surface roughness in laser induced crystallization of nanostrucutured silicon films". J. Vac. Sci. Technol. A18 (2000) pp. 529-535.

 

  1. A. Fontcuberta i Morral, R. Brenot, E.A.G. Hamers, R. Vanderhaghen, and P. Roca i Cabarrocas: "In situ investigation of polymorphous silicon deposition". J. of Non Cryst. Solids  266-269 (2000) 48.

 

  1. P. Roca i Cabarrocas: "Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films". J. of Non Cryst. Solids 266-269 (2000) 31.

 

  1. R. Butté, S. Vignoli, M. Meaudre, R. Meaudre, O. Marty, and P. Roca i Cabarrocas: "Structural, optical and electrical properties of polymorphous silicon films". J. of Non Cryst. Solids 266-269 (2000) 263.

 

  1. Y. Poissant and P. Roca i Cabarrocas: "Optimizing phosphorous and boron doped layers for stable p-i-n solar cells". J. of Non Cryst. Solids 266-269 (2000) 1134.

 

  1. R. Brenot, R. Vanderhaghen, B. Drévillon, and P. Roca i Cabarrocas: "Real-time measurement of transversal ambipolar diffusion coefficient in microcrystalline silicon". J. of Non Cryst. Solids 266-269 (2000) 336.

 

  1. A.S. Abramov, A. I. Kosarev, and P. Roca i Cabarrocas: "Kinetics of defects and electron, hole diffusion lengths during light soaking and consequent annealing". J. of Non Cryst. Solids 266-269 (2000) 419.

 

  1. A. Hadjadj, A. Beorchia, P. Roca i Cabarrocas, L. Boufendi, S. Huet, and J.L. Bubendorff: "Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films ". J. of Phys. D: Applied Phys. 34 (2001) 690.

 

  1. A. Hadjadj, A. Beorchia, L. Boufendi, S. Huet, and P. Roca i Cabarrocas: "Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed glow discharge: correlation with the plasma duration ". J. Vac. Sci. Technol. A19 (2001) 124.

 

  1. R.B. Wehrspohn, M.J. Powell, S.C. Deane, I. French, and P. Roca i Cabarrocas: "Dangling bond defect state creation in microcrystalline silicon thin film transistors". Appl. Phys. Lett. 77 (2000) 750.

 

  1. T. Globus, G. Ganguly, and P. Roca i Cabarrocas: "Optical characterization of hydrogenated silicon thin films using interference technique". J. Appl. Phys. 88    (2000) 1907.

 

  1. E.A.G. Hamers, A. Fontcuberta i Morral, C. Niikura, R. Brenot, and P. Roca i Cabarrocas: "Contribution of ions to the growth of amorphous, polymorphous and microcrystalline silicon thin films, and their effect on the structural and electronic properties". J. Appl. Phys. 88, 3674 (2000).

 

  1. A. Fontcuberta i Morral and P. Roca i Cabarrocas : "Shedding light on the growth of amorphous, polymorphous, protocrystalline and microcrystalline silicon thin films". Thin Solid Films 383, 161 (2001).

 

  1. R. Brenot, R. Vanderhaghen, B. Drévillon, P. Roca i Cabarrocas, R. Rogel, and T. Mohammed-Brahim: "Transport mechanisms in microcrystalline silicon". Thin Solid Films 383, 53 (2001).

 

  1. T. Seth and P. Roca i Cabarrocas: "Plasma deposition of carbon films at room temperature from C2H2-Ar mixtures: anodic versus cathodic films. Thin Solid Films 383, 216 (2001).

 

  1. A.S. Abramov, A.I. Kosarev, P. Roca i Cabarrocas, M.V. Shutov, and A.J. Vinogradov : "Photoinduced effects in RF and VHF a-Si :H films deposited with different ion bombardment". Thin Solid Films 383, 178 (2001).

 

  1. S. Hamma and P. Roca i Cabarrocas : "Low temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon : optimum crystalline fractions for solar cells applications". Solar Energy Materials and Solar Cells 69 (2001) pp. 217-239.

 

  1. V. Paillard, P. Puech, R. Sirvin, S. Hamma, and P. Roca i Cabarrocas : "Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry". J. of Appl. Phys. 90, 3276 (2001).

 

  1. P. Roca i Cabarrocas, S. Kumar, V. Tripathi, P. Bulkin, R. Brenot, B. Drévillon, R. Vanderhaghen, and I. French: "Low Temperature Plasma Processed Microcrystalline Silicon Thin Films for Large Area Electronics". Solid State Phenomena Vols. 80-81 (2001) 361.

 

  1. S. Kumar, R. Brenot, B. Kalache, V. Tripathi, R. Vanderhaghen, B. Drévillon and P. Roca i Cabarrocas: "Highly crystalline Intrinsic Microcrystalline Silicon Films using SiF4/Ar/H2 Glow Discharge Plasma". Solid State Phenomena Vols. 80-81 (2001) 237.

 

  1. B. Kalache, R. Brenot, V. Tripathi, S. Kumar, R. Vanderhaghen and P. Roca i Cabarrocas: "Effects of Ion Bombardment on Microcrystalline Silicon Growth". Solid State Phenomena Vols. 80-81 (2001) 71.

 

  1. C. Niikura, R. Vanderhaghen, B. Drévillon, P. Roca i Cabarrocas, R. Rogel, and T. Mohammed-Bahim: “Growth mechanisms and structural properties of microcrystalline silicon films depostied by catalyttic CVD”. Thin Solid Films 395 (2001) 178-183.

 

  1. A. Fontcuberta i Morral and P. Roca i Cabarrocas : "Etching and hydrogen diffusion mechanisms during hydrogen plasma exposure of silicon thin films". J. Non Cryst. Solids 299-302, pp. 196-200 (2002)

 

  1. A. Fontcuberta i Morral, H. Hofmeister, and P. Roca i Cabarrocas : "Structure of plasma-deposited polymorphous silicon". J. Non Cryst. Solids 299-302 284 (2002).

 

  1. B. Kalache, A.I. Kosarev, R. Vanderhaghen, and P. Roca i Cabarrocas : "Ion bombardement effects on the microcrystalline silicon growth mechanisms and structure". J. Non Cryst. Solids 299-302 63 (2002).

 

  1. J.P. Kleider and P. Roca i Cabarrocas : "Reverse bias annealing effects of Schottky diodes : evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon". J. Non Cryst. Solids 299-302 551 (2002).

 

  1. W. Bronner, J.P. Kleider, R. Brüggemann, P. Roca i Cabarrocas, D. Mencaraglia and M. Mehring : "Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon". J. Non Cryst. Solids 299-302 551 (2002).

 

  1. C. Voz, J. Puigdollers, A. Orpella, R. Alcubilla, A. Fontcuberta i Morral, V. Tripathi, and P. Roca i Cabarrocas : "Thin film transistors with polymorphous silicon active layer". J. Non Cryst. Solids 299-302, pp. 1345-1350 (2002).

 

  1. R. Vanderhaghen, S. Kasouit, R. Brenot, V. Chu, J.P. Conde, F. Liu, A. de Martino, and P. Roca i Cabarrocas : "Electronic transport in microcrystalline silicon controlled by trapping and intra-grain mobility". J. Non Cryst. Solids 299-302 365 (2002).

 

  1. S. Kasouit, S. Kumar, R. Vanderhaghen, P. Roca i Cabarrocas, and I. French : "Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor". J. Non Cryst. Solids 299-302, pp. 113 (2002).

 

  1. S. K. Ram, S. Kumar, R. Vanderhaghen, and P. Roca i Cabarrocas : "A critical investigation of the electron transport behaviour in microcrystalline silicon films". J. Non Cryst. Solids 299-302 411 (2002).

 

  1. T. Globus, P. Roca i Cabarrocas, and B. Gelmont : "Defect related absorption in hydrogenated silicon films". J. Non Cryst. Solids 299-302 615 (2002).

 

  1. V. Paillard, P. Roca i Cabarrocas, A. Zwick, and G. Landa : "Vibrational properties of nanostructured hydrogenated silicon thin fillms produced by modulated PECVD". J. Non Cryst. Solids 299-302, pp. 280 (2002).

 

  1. Y. Poissant, P. Chatterjee, and P. Roca i Cabarrocas : "Metastability study and optimization of polymorphous silicon solar cells : the state of the art". J. Non Cryst. Solids 299-302, pp. 1173 (2002).

 

  1. P. Roca i Cabarrocas, A. Fontcuberta i Morral and Y. Poissant : "Growth and optoelectronic properties of polymorphous silicon thin films". Thin Solid Films Vol. 403-404, 39 (2002).

 

  1. A. Hadjadj, A. Beorchia, P. Roca i Cabarrocas and L. Boufendi: “Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films”. Thin Solid Films Vol. 403-404, 139 (2002).

 

  1. P. Roca i Cabarrocas, A. Fontcuberta i Morral, S. Lebib, and Y. Poissant : "Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large area electronics", Pure Appl. Chem. 74, 359 (2002).

 

  1. H. Touir and P. Roca i Cabarrocas: “Optical dispersion relations for crystalline and microcrystalline silicon”. Phys. Rev B 65, 155330 (2002).

 

  1. N. Souffi, M. Daouahi, L. Chahed, K. Zellama, and P. Roca i Cabarrocas : "Photo-induced changes in optoelectronic properties of hydrogenated amorphous silicon films deposited using pure and highly helium diluted silane". Solid State Communications 122, 259 (2002).

 

  1. A. Hadjadj, B. Equer, A. Beorchia, and P. Roca i Cabarrocas : "Contact potential measurements with local Kelvin probe". Philosophical Magazine B 82 (2002) 1257-1266.

 

  1. M. E. Gueunier, J.P. Kleider, S. Lebib, P. Roca i Cabarrocas, R. Meaudre, and B. Canut. "Properties of polymorphous silicon-germanium alloys deposited under high hydrogen dilution and at high pressure".  J. Appl. Phys. 92 (2002) pp 4959-4967.

 

  1. G. Viera, M. Mikikian, E. Bertran, P. Roca i Cabarrocas, and L. Boufendi: “Atomic structure of the nanocrystalline silicon particles appearing in nanostructured silicon thin films produced in low temperature radiofrequency plasmas” J. Appl. Phys. 92 (2002) 4684.

 

  1. P. Roca i Cabarrocas : "Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics”. Current Opinion in Solid State and Materials Science. Vol. 6 (2002) 439-444.

 

  1. P. Roca i Cabarrocas, A. Fontcuberta i Morral, A.V. Kharchenko, S. Lebib, L. Boufendi, S. Huet, M. Mikikian, M. Jouanny and A. Bouchoule : "Plasma Grown Particles : from Injected Gases to Nanoparticles and Nanomaterials, from Injected Particles to Dust Clouds in the PKE Experiment", Dusty Plasmas in the New Millennium : 3rd International Conference on the Physics of Dusty Plasmas, ed. R. Bharuthram, M.A. Hellberg, P.K. Shukla and F. Verheest, AIP Conference Proceedings 649 45.

 

  1. Y. Poissant, P. Chatterjee, and P. Roca i Cabarrocas : “Microcrystalline silicon N layers for amorphous silicon P-I-N solar cells”. J. Appl. Phys. 93 (2003) pp. 170-174.

 

  1. B. Kalache, A.I. Kosarev, R. Vanderhaghen, and P. Roca i Cabarrocas : "Ion bombardement effects on the microcrystalline silicon growth mechanisms and on the film properties". J. Appl. Phys. 93 (2003) pp 1262-1273.

 

  1. J. Ebothe, I.V. Kytik, P. Roca i Cabarrocas, C. Godet, and B. Equer: "Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films". J. Phys. D: Appl. Phys.36 (2003) pp 713-718.

 

  1. T. Novikova, B. Kalache, Kh. Hassouni, W. Morscheidt, and P. Roca i Cabarrocas: "Numerical model of hydrogen plasmas: effects of frequency and pressure". J. Appl. Physics 93 (2003) pp. 3198-3206.

 

  1. R. Meaudre, R. Butté, S. Vignoli, M. Meaudre, L. Saviot, O. Marty, and P. Roca i Cabarrocas : "Structural properties and recombination processes in hydrogenated polymorphous silicon". Eur. Phys. J. AP 22 (2003) pp. 171-178.

 

  1.  P. Roca i Cabarrocas, A. Fontcuberta i Morral, B. Kalache, and Samir Kasouit: “Microcrystalline silicon thin Films grown by PECVD. Growth mechanisms and grain size control. Solid State Phenomena 93 (2003) pp. 257-268.

 

  1.  A. V. Kharchenko, V. Suendo, and P. Roca i Cabarrocas: “Plasma studies under polymorphous silicon deposition conditions”. Thin Solid Films 427 (2003) 236-240.

 

  1. O. Saadane, C. Longeuad, S. Lebib and P. Roca i Cabarrocas: “What makes a thin fim semiconductor suitable for solar cell applications ?”. Thin Solid Films 427 (2003) 241-246.

 

  1.  M. Brinza, G. Adriaenssens and P. Roca i Cabarrocas: “Time-of-flight measurements of the carrier drift mobilities in polymorphous silicon samples”. Thin Solid Films 427 (2003) 123-126.

 

  1.  M.E. Gueunier, J.P. Kleider, P. Chatterjee, P. Roca i Cabarrocas, and Y. Poissant: “Study of pm-SiGe:H films for p-i-n devices and tandem solar cells”. Thin Solid Films 427 (2003) 247-251.

 

  1.  H. Aguas, P. Roca i Cabarrocas, S. Lebib, V. Silva, E. Fortunato, and R. Martins: "Polymorphous silicon deposited in large area reactor at 13 and 27 MHz". Thin Solid Films 427 (2003) 6-10.

 

  1.  S. Kasouit, P. Roca i Cabarrocas, and R. Vanderhaghen: "DTRMC, a probe of transverse transport in microcrystalline silicon". Thin Solid Films 427 (2003) 335-339.

 

  1. S. Kasouit, P. Roca i Cabarrocas, R. Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, I. French, J. Rocha and B. Vitoux: " Effect of deposition conditions and dielectric plasma treatments on the electrical properties of microcrystalline silicon TFTs". Thin Solid Films 427 (2003) 67-70.

 

  1. K. Wang, P. Filloux, N. Paraire, P. Roca i Cabarrocas, and P. Bulkin : " Two-Dimensional Photonic Crystals by Focused-Ion-Beam Etching of Multilayer Membranes”. Journal of Vacuum Science & Technology B 21, 966 (2003).

 

  1. O. Saadane, S. Lebib, A.V. Kharchenko, Ch. Longeaud, and P. Roca i Cabarrocas: "Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane-hydrogen and silane-helium mixtures". J. Appl. Phys. 93, 9371 (2003).

 

  1. N. Chaâbane, A.V. Kharchenko, H. Vach and Pere Roca i Cabarrocas: “ Optimization of plasma parameters for the production of silicon nanocrystals". New Journal of Physics 5 (2003) 37.

 

  1. Y. Poissant, P. Chatterjee, and P. Roca i Cabarrocas : "Analysis and optimization of the performance of polymorphous silicon solar cells: experimental characterization and computer modeling”. J. Appl. Phys. 94 (2003) pp. 7305-7316.

 

  1. S. Tchakarov, P. Roca i Cabarrocas, U. Dutta, P. Chatterjee, and B. Equer: "Experimental study and modelling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon". J. Appl. Phys. 94 (2003) pp. 7317-7327.

 

  1. H. Aguas, V. Silva, E. Fortunato, S. Lebib, P. Roca i Cabarrocas, I. Ferreira, L. Guimaraes, and R. Martins: "Large area deposition of polymorphous silicon by PECVD at 27.12 MHz and 13.56 MHz". Jpn. J. Appl. Phys. 42 (2003) pp. 4935-4942.

 

  1. F. Kail, A. Fontcuberta i Morral, A. Hadjadj, P. Roca i Cabarrocas, and A. Beorchia: "Hydrogen plasma etching of amorphous silicon. A study by a combination of spectroscopic ellipsometry and trap-limited diffusion model". Phil. Mag. B
    Vol. 84, N° 6, (2003) pp. 595-609.

 

  1. R. Martins, H. Águas, I. Ferreira, E. Fortunato S. Lebib, P. Roca i Cabarrocas, L. Guimarães, "Polymorphous silicon films deposited at 27.12 MHz” Advanced Materials Chemical Vapor Deposition, 9 (6) (2003) pp.333-337.

 

  1. I. Martin, M. Vetter, A. Orpella, C. Voz, J. Puigdollers, R. Alcubilla, A.V. Kharchenko, and P. Roca i Cabarrocas: "Improvement of crystalline silicon surface passivation by hydrogen plasma treatment". Appl. Phys. Lett. 84 (2004) pp 1474-1477.

 

  1. A. Fontcuberta i Morral, P. Roca i Cabarrocas and C. Clerc: "Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements". Phys. Rev. B 69 (2004) 125307.

 

  1. P. Roca i Cabarrocas: "New approches for the production of nano-, micro-, and polycristalline silicon thin films". Phys. Stat. Solidi (c) 1, N°5 (2004) pp. 1115-1130.

 

  1. P. Roca i Cabarrocas, S. Kasouit, B. Kalache, R. Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, and I. French: “Microcrystalline Silicon: An Emerging Material for Stable Thin Film Transistors”. Journal of the Society for Information Display. Special issue on selected papers from the 2003 SID Int. Symposium.Vol 12 n n° 1 (2004) pp.3 -9.

 

  1. D. Franta, I. Ohlidal, P. Klapetek, and P. Roca i Cabarrocas, Thin Solid Films 455-456, 399 (2004).

 

  1. E. Pihan, A. Slaoui, P. Roca i Cabarrocas, A. Focsa:  "Polycrystalline silicon films by aluminum-induced crystallization: crystallization process versus silicon deposition method". Thin Solid Films 451-452 (2004) pp. 328-333.

 

  1.  V. Suendo, A.V. Kharchenko and P. Roca i Cabarrocas: "The effects of RF plasma excitation frequency and doping gas on the deposition of polymorphous silicon films” Thin Solid Films 451-452 (2004) pp. 259-263.

 

  1. N. Chaâbane, H. Vach and P. Roca i Cabarrocas: “The role of initial vibrational and rotational reactant excitation for the reaction dynamics of H2 (o, Jo) with Si+(2P)”. J. Phys. Chem. A 108 (2004) 12.

 

  1. S. Lebib and P. Roca i Cabarrocas: “Structure and hydrogen bonding in plasma deposited silicon thin films”. Eur. Phys. J. Appl. Phys. 26 (2004) pp. 17-27.

 

  1. H. Águas, L. Raniero, E. Fortunato, A. Viana, P. Roca i Cabarrocas, R. Martins. “Role of the rf frequency on the structure and composition of polymorphous silicon”. J. Non Cryst. Solids 338-340 (2004) pp. 183-187.

 

  1. S. Kasouit, P. Roca i Cabarrocas, R. Vanderhaghen, Y. Bonnassieux, I.D. French, and M. Elyaakoubi: “Effects of grain size and plasma induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTs”. J. Non Cryst. Solids 338-340 (2004) pp. 369-373.

 

  1. S. Tchakarov, U. Dutta, P. Roca i Cabarrocas, and P. Chatterjee: “Modelling of reverse bias dark currents in PIN structures using amorphous and polymorphous silicon". J. Non Cryst. Solids 338-340 (2004) pp. 766-771.

 

  1. S. Kasouit, J. Damon-Lacoste, R. Vanderhaghen, and P. Roca i Cabarrocas: "Contribution of  plasma generated nanocrystals to the growth of microcrystalline silicon thin films". J. Non Cryst. Solids 338-340 (2004) pp. 86-90.

 

  1. R. Vanderhaghen, S. Kasouit, J. Damon-Lacoste, F. Lui, and P. Roca i Cabarrocas: "Study of transport, trapping and recombination mechanisms in microcrystalline silicon by transient photoconductivity”. J. Non Cryst. Solids 338-340 (2004) pp. 336-340.

 

  1. C. Guedj, N. Moussy, W. Rabaud, P. Roca i Cabarrocas, S. Tchakarov and J.P. Kleider: "UV-visible sensors based on polymorphous silicon". J. Non Cryst. Solids 338-340 (2004) pp. 749-753.

 

  1. S. Tchakarov, Debajyoti Das, O. Saadane, A.V. Kharchenko, V. Suendo, F. Kail, and P. Roca i Cabarrocas: "Helium versus hydrogen dilution in the optimization of polymorphous silicon solar cells”. J. Non Cryst. Solids 338-340 (2004) pp. 668-672.

 

  1. U. Dutta, P. Chatterjee, P. Roca i Cabarrocas, P. Chaudhuri and R. Vanderhaghen: " Calculation of the position-dependent inner collection efficiency in PIN solar cells using an electrical-optical model". J. Non Cryst. Solids 338-340 (2004) pp. 677-681.

 

  1. N. Chaâbane, P. Roca i Cabarrocas, and H. Vach: "Trapping of plasma produced nanocrystalline silicon particles on a low temperature substrate”. J. Non Cryst. Solids 338-340 (2004) pp. 51-55.

 

  1. B. Kalache, T. Novikova, A. Fontcuberta i Morral, P. Roca i Cabarrocas, W. Morscheidt, and K. Hassouni: "Investigation of coupling between chemistry and discharge dynamics in radio frequency hydrogen plasmas in the Torr regime". J. Physics D: Appl. Phys. 37 (2004) pp. 1765-1773.

 

  1. D. Daineka, V. Suendo, and P. Roca i Cabarrocas: "Temperature dependence of the optical functions of amorphous silicon based materials: application to in situ temperature measurements by spectroscopic ellipsomery". Thin Solid Films 468 (2004) pp. 298-302.

 

  1. J. Farjas, Ch. Rath, P. Roura and P. Roca i Cabarrocas: “Crystallization kinetics of hydrogenated amorphous thick films grown by plasma enhanced chemical vapor deposition”. Applied Surface Science 238 (2004) pp. 165-168.

 

  1. P. Roca i Cabarrocas, N. Chaâbane, A.V. Kharchenko and S.Tchakarov: " Polymorphous silicon thin films produced in dusty plasmas: application to solar cells”. Plasma Phys. Control. Fusion 46 (2004) pp B235-B243.

 

  1. V. Suendo, G. Patriarche, and P. Roca i Cabarrocas: “Luminescence of polymorphous silicon carbon alloys”. Optical Materials 27 (2004) pp. 953-957.

 

  1. S. Vignoli, P. Mélinon, B. Masenelli, P. Roca i Cabarrocas, A.M. Flank, and Ch. Longeaud : "Overcoordination, and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties”. J. Phys.: Condens. Matter 17 (2005) pp. 1279-1288.

 

  1. J. Farjas, J. Serra-Miralles, P. Roura, E. Bertran, P. Roca i Cabarrocas : "Anomalous crystallization of hydrogenated amorphous silicon during fast heating ramps". J. Mat. Res. 20 (2005) pp. 277-281.

 

  1. Ch. Rath, J. Farjas, P. Roura, F. Kail, P. Roca i Cabarrocas, and E. Bertran,: "Thermally induced structural transformation on polymorphous silicon". J. Mat. Res. 20 (2005) pp. 2562-2567.

 

  1. S. Lebib and P.Roca i Cabarrocas: “Effects of ion energy on the crystal size and hydrogen bonding in plasma deposited nanocrystalline silicon thin films”. J. Appl. Phys. 97 (2005) 104334.

 

  1. K. Morigaki , K. Takeda, H. Hikita and P. Roca i Cabarrocas: “Ligth-induced defect creation and thermal annealing in hydrogenated polymorphous silicon - Repeated cycles of illumination and annealing”. Phil. Mag. 85 (2005) pp. 3393-3407.

 

  1. K. Morigaki , K. Takeda, H. Hikita and P. Roca i Cabarrocas: “Light-induced defect creation in hydrogenated polymorphous silicon”. Mat. Sci. and Eng. B 121 (2005) pp. 34-41.

 

  1. F. Kail, A. Hadjadj and P. Roca i Cabarrocas: “Hydrogen diffusion and induced crystallization in intrinsic and doped hydrogenated amorphous silicon films”. Thin Solid Films 487 (2005) 126-131.

 

  1. U. Dutta, S. Tchakarov, M. Uszpolewicz, P. Roca i Cabarrocas and P. Chatterjee: “Evolution of current-induced defects in hydrogenated amorphous silicon p-i-n solar cells: inference from simulation of experimental characteristics”. J. Appl. Phys. 98 (2005) 044511.

 

  1. Th. Nguyen-Tran, V. Suendo, and P. Roca i Cabarrocas: “Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys”. Appl. Phys. Lett. 87 (2005) 011903.

 

  1. H. Vach, Q. Brulin, N. Chaâbane, T. Novikova, P. Roca i Cabarrocas, B. Kalache, K. Hassouni, S. Botti and L. Reining: “Growth dynamics of hydrogenated silicon nanoparticles under realistic conditions of a plasma reactor”.  Computational Materials Science 35 (2006) pp. 216 – 222.

 

  1. B. Kalache, P. Roca i Cabarrocas, and A. Fontcuberta i Morral. “Observation of incubation times in the nucleation of silicon nanowires obtained by the Vapor-Liquid-Solid method. Jpn. J. Appl. Phys. Express Letter 45 (2006) pp. L190-193.

 

  1. J. Ebothé, K.J. Plucinski, P. Roca i Cabarrocas and I. V. Kityk : "  Non linear optical diagnostic of a-Si:H thin films deposited by RF-glow discharge”. PHYSICA  E 31 (2006) pp. 132-135.

 

  1. N. Chaâbane, V. Suendo, H. Vach and P. Roca i Cabarrocas:  “Soft landing of silicon nanocrystals in plasma enhanced chemical vapour deposition”. Appl. Phys. Lett. 88 (2006) 203111.

 

  1. A. S. Gudovskikh J.-P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti,
    J.-C.Muller, P.-J. Ribeyron, E. Rolland: “Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy”. Thin Solid Films 511-512 (2006) 385-389.

 

  1. Y. Veschetti, J.-C.Muller, J. Damon-Lacoste, P. Roca i Cabarrocas, A. S. Gudovskikh, J.-P. Kleider, P.-J. Ribeyron, E. Rolland: “Optimisation of amorphous and polymorphous thin silicon layers for formation of front-side heterojunction solar cells on P-type crystalline silicon substrates”. Thin Solid Films 511-512 (2006) 543-547.

 

  1. S.K. Ram, S. Kumar, R. Vanderhaghen, B. Drévillon and P. Roca i Cabarrocas: “Recombination traffic in highly crystallized undoped microcrystalline silicon films studied by steady state photoconductivity”.  Thin Solid Films 511-512 (2006) 556-561.

 

  1. A. Fontcuberta i Morral and P. Roca i Cabarrocas: “Role of hydrogen diffusion on the growth of polymorphous and microcrystalline silicon thin films”.  Eur. Phys. J. Appl. Phys. 35 (2006) 165.

 

  1. P. Roura, J. Farjas, Ch. Rath, J. Serra-Miralles, E. Bertran, and P. Roca i Cabarrocas: “Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials”. Phys. Rev. B 73 (2006) 085203.

 

  1. A. Abramov, Y. Djeridane, R. Vanderhaghen, and P. Roca i Cabarrocas: “Large grain µc-Si:H films deposited at low temperature: growth process and electronic properties”. J. Non Cryst. Solids 352 (2006) pp. 964-967.

 

  1. J. Damon-Lacoste, P. Roca i Cabarrocas, P. Chatterjee, Y. Veschetti; A.S. Gudovskikh, J.P. Kleider and P.J. Ribeyron: “About the efficiency limits of heterojunction solar cells”. J. Non Cryst. Solids 352 (2006) pp. 1928-1932.

 

  1. V. Suendo, G. Patriarche and P. Roca i Cabarrocas: “Influence of deposition parameters and post-deposition plasma treatments on the photoluminescence of polymorphous silicon carbon alloys”. J. Non Cryst. Solids 352 (2006) pp. 1357-1360.

 

  1. V. Suendo and P. Roca i Cabarrocas: “Plasma diagnostics in silane-methane-hydrogen plasmas under pm-Si1-xCx:H deposition conditions: Correlation with film properties”. J. Non Cryst. Solids 352 (2006) pp. 959-963.

 

  1. M.E. Gueunier-Farret, C. Bazin, J.P. Kleider, C. Longeaud, P. Bulkin, D. Daineka, T.H. Dao, P. Roca i Cabarrocas, P. Descamps, T. Kervyn de Meerendre, P. Lempoel, M. Meaudre and R. Meaudre: “Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates”. J. Non Cryst. Solids 352 (2006) pp. 1913-1916.

 

  1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Study of anomalous behaviour of steady state photoconductivity in highly crystallized undoped microcrystalline Silicon films”. J. Non Cryst. Solids 352 (2006) pp. 1172-1175.

 

  1. F. Kail, S. Fellah, A. Abramov, A. Hadjadj and P. Roca i Cabarrocas: “Experimental evidence for extended hydrogen diffusion in silicon thin films during ligth soaking”. J. Non Cryst. Solids 352 (2006) pp. 1083-1086.

 

  1. V. Tripathi, Y.N. Mohapatra, and P. Roca i Cabarrocas: “Trapping phenomena in intrinsic hydrogenated amorphous silicon like materials studies using current transient spectroscopies”. J. Non Cryst. Solids 352 (2006) pp. 1130-1133.

 

  1. T. Nguyen-Tran, V. Suendo, P. Roca i Cabarrocas, L.T. Nittala, S.N. Bofle and J.R. Abelson: “Fluctuation microscopy evidence for enhanced nanoscale structural order in polymorphous silicon thin films”. J. Appl. Phys. 100 (2006) 094319.

 

  1. P.J. Alet, S. Palacin, P. Roca i Cabarrocas, B. Kalache, M. Firon and R. De Bettignies: “Hybrid solar cells based on thin film silicon and P3HT”. Eur. Phys. J. Appl. Phys. 36 (2006) pp. 231-234.

 

  1. P. Roca i Cabarrocas, Th Nguyen-Tran, Y. Djeridane, A. Abramov, E. Johnson and G. Patriarche: “Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices”. J. Phys. D: Appl. Phys. 40 (2007) pp. 2258-2266.

 

  1. E.V. Johnson and P. Roca i Cabarrocas: “Spectral response and field enhanced reverse current in a-Ge:H nip photodiodes“. Solar Energy Mat. and Solar Cells 91 (2007) 877-881.

 

  1. R. Rao, F. Kail and P.Roca i Cabarrocas: “Effect of substrate on hydrogen in and out diffusion from a-Si:H thin films”. Journal of Materials Science: Materials in Electronics 18 (2007) 1051-1056.

 

  1. K. Morigaki, K. Takeda, H. Hikita and P. Roca i Cabarrocas: “Dispersive processes of the light-induced defect creation in hydrogenated amorphous silicon”. Solid State Communications 142 (2007) pp. 232-236.

 

  1. S.K. Ram, S. Kumar and P. Roca i Cabarrocas: “Numerical model of steady-state photoconductivity process in highly crystallized undoped µc-Si:H films”. Thin Solid Films 515 (2007) 7576-7580.

 

  1. S.K. Ram, S. Kumar and P. Roca i Cabarrocas: “Role of microstructure in electronic transport behaviour of in highly crystallized undoped µc-Si:H films”. Thin Solid Films 515 (2007) 7469-7474.

 

  1. S.K. Ram, S. Kumar and P. Roca i Cabarrocas: “Microstructure and surface roughness study of highly crystallized µc-Si:H films”. Thin Solid Films 515 (2007) 7619-7624.

 

  1. Y. Djeridane, A. Abramov and P. Roca i Cabarrocas: “Silane versus silicon tetrafluoride in the growth of microcrystalline silicon thin films by standard radiofrequency glow discharge”. Thin Solid Films 515 (2007) 7451-7454.

 

  1. A.S. Gudovskikh, S. Ibrahim, J-P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti and P.J. Ribeyron: "Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits". Thin Solid Films 515 (2007) 7481-7485.

 

  1. M. Brinza, G.J. Adriaenssens, A. Abramov and P. Roca i Cabarrocas: Influence of deposition parameters on hole mobility in polymorphous silicon".  Thin Solid Films 515 (2007) 7504-7507.

 

  1. L. Sanchez, A. Kosarev, A. Torres, A. Ilinskii, Y. Kudriavtsev, R. Asomoza, P. Roca i Cabarrocas and A. Abramov: " Study of GeySi1-y:H films deposited by low frequency plasma". Thin Solid Films 515 (2007) 7603-7606.

 

  1. T.H. Dao, M.E. Hgueunier-Farret, D. Daineka, P. Bulkin, P. Roca i Cabarrocas, J.P. Kleider, C. Longeaud, C. Bazin, T. Kervyn de Meerendre, P. Descamps and P. Leempoel: "Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance". Thin Solid Films 515 (2007) 7650-7653

 

  1. M. Oudwan, Y. Djeridane, A. Abramov, B. Aventurier, P. Roca i Cabarrocas and F. Templier: "Influence of process steps on the performance of microcrystalline silicon thin film transistors". Thin Solid Films 515 (2007) 7662-7666.

 

  1. J. Arbiol, B. Kalache, P. Roca i Cabarrocas, J.R. Morante, and A. Fontcuberta i Morral: “Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour-solid-solid mechanism”. Nanotechnology 18 (2007) 305606 (8pp).

 

  1. Th. Nguyen-Tran, P. Roca i Cabarrocas and G. Patriarche: “Study of radial growth rate and size control of silicon nanocrystals in square-wave modulated silane plasmas”. Applied Phys. Lett. 91 (2007) 111501.

 

  1. D. Munoz; C. Voz, I. Martin, A. Orpella, J. Puigdollers, R. Alcubilla, F. Villar, J. Bertomeu, J. Andreu, J. Damon-Lacoste and P. Roca i Cabarrocas: "Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C". Thin Solid Films  (2007).

 

  1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Influence of the statistical shift of the Fermi level on the conductivity behaviour in microcristalline silicon”. Physical Review B 77 (2008) 045212.

 

  1. I. Stenger, Th. Nguyen-Tran, A. Abramov, C. Barthou, and P. Roca i Cabarrocas: “Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature”. Mat. Sci. and Eng. B 147 (2008) 245-248.

 

  1. N. Pham, P. Roca i Cabarrocas, A. Hadjadj, A. Beorchia, F. Kail and L. Chahed: “Hydrogen evolution during deposition of microcrystalline silicon by chemical transport”. Phil. Mag. 88 (2008) 297.

 

  1. P. Roca i Cabarrocas, Y. Djeridane, V.D. Bui, Y. Bonnassieux and A. Abramov: “Critical issues in Plasma Deposition of Microcrystalline Silicon for thin film transistors”. Solid State Electronics 52 (2008) 422.

 

  1. M. Oudwan, A. Abramov, P. Roca i Cabarrocas and F. Templier: “Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors”. Solid State Electronics 52 (2008) 432.

 

  1. R. Ferre, A. Orpella, D. Munoz, I. Martin, F. Recart, J. Puigdollers, P. Roca i Cabarrocas, and R. Alcubilla: “Very low surface recombination velocity of crystalline silicon passivated by phosphorous-doped a-SiCxNy:H (n) alloys”. Progr. Photovolt: Res. Appl. 16 (2008) 123-127.

 

  1. M. Nath, P. Chatterjee, J. Damon-Lacoste and P. Roca i Cabarrocas: “Criteria for improved open-circuit voltage in a-Si:H(N) / c-Si(P) front heterojunction solar cells”. J. Appl. Phys. 103 (2008) 034506.

 

  1. E.V. Johnson, G. Patriarche and P. Roca i Cabarrocas: “Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals”. Appl. Phys. Lett. 92 (2008) 103108.

 

  1. I. Stenger, A. Abramov, C. Barthou, Th. Nguyen-Tran, A. Frigout, and P. Roca i Cabarrocas: “Strong orange/red electroluminescence from hydrogenated polymorphous silicon carbon light-emitting device”. Appl. Phys. Lett. 92 (2008) 241114.

 

  1. A. Abramov, D. Daineka; Y. Djeridane, and P. Roca i Cabarrocas:, “Detailed study of surface and interface properties of µc-Si films”. J. Non Cryst. Solids 354 (2008) 2218-2222; doi:10.1016/j.jnoncrysol.2007.10.099.

 

  1. Y. M. Soro, A. Abramov, M.E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas, and J.P. Kleider: “Device grade hydrogenated polymorphous silicon deposited at high rates”. ”. J. Non Cryst. Solids 354 (2008) 2092-2095; doi:10.1016/j.jnoncrysol.2007.10.047.

 

  1. J. P. Kleider, Y. M. Soro, R. Chouffot, A. S. Gudovskikh, P. Roca i Cabarrocas, J. Damon-Lacoste, D. Eon and P. J. Ribeyron: “Hihgh interfacial conductivity at amorphous silicon / crystalline silicon heterojunctions”. J. Non Cryst. Solids 354 (2008) 2641-2645; doi:10.1016/j.jnoncrysol.2007.10.087.

 

  1. E.V. Johnson, M. Nath, P. Roca i Cabarrocas, A. Abramov, and P. Chatterjee: “Why does the open-circuit voltage in a microcrystalline silicon solar cell decrease with increasing crystalline volume fraction ?”. J. Non Cryst. Solids 354 (2008) 2455-2459; doi:10.1016/j.jnoncrysol.2007.10.0421.

 

  1. R. Chouffot, S. Ibrahim, R. Brüggemann, A. S. Gudovskikh, J. P. Kleider, M. Scherff, W.R. Fahrner, P. Roca i Cabarrocas, D. Eon, and P. J. Ribeyron: “Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells”. J. Non Cryst. Solids 354 (2008) 2416-2420; doi:10.1016/j.jnoncrysol.2007.10.032.

 

  1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Normal and anti Meyer-Neldel rule in conductivity of highly crystallized undoped microcrystalline silicon films”. J. Non Cryst. Solids 354 (2008) 2263-2267; doi:10.1016/j.jnoncrysol.2007.10.051.

 

  1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Fractional composition of large crystalline grains: A unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon”. J. Non Cryst. Solids 354 (2008) 2242-2247; doi:10.1016/j.jnoncrysol.2007.10.049.

 

  1. K. Morigaki, K. Takeda, H. Hikita, C. Ogihara, and P. Roca i Cabarrocas: ”The kinetics of the ligth-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation”. J. Non Cryst. Solids 354 (2008) 2131-2134; doi:10.1016/j.jnoncrysol.2007.10.060.

 

  1. J. Rath, R.E.I. Schropp, P. Roca i Cabarrocas, and F.D. Tichelaar: “Thin film silicon devices deposited at 100 °C : A study on the structural order of the photoactive layer”. J. Non Cryst. Solids 354 (2008) 2652.

 

  1. J. Rath, R.E.I. Schropp, P. Roca i Cabarrocas: “Structural order of thin film silicon made at 100 °C”. Physica Status Solidi C 5 (2008) 5.

 

 

  1. J.P. Kleider, A.S. Gudovskikh and P. Roca i Cabarrocas: “Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements”. Appl. Phys. Lett. 92 (2008) 162101; DOI: 10.1063/2907695.

 

  1. Q. Zhang, E.V. Johnson, Y. Djeridane, A. Abramov, and P. Roca i Cabarrocas: “Decoupling crystalline volume fraction and Voc in microcrystalline silicon pin solar cells by using a µc-Si:F:H intrinsic layer”. Phys. Stat. Sol. Rapid Research Letters 2 (2008) 154-156. http://dx.doi.org/10.1002/pssr.2008.02.106

 

  1. A. Datta, J. Damon-Lacoste, P. Roca i Cabarrocas and P. Chatterjee: “Defect states on the surfaces of a P-type c-Si wafer and how they control the performance of a double heterojunction solar cell”. Solar Energy Mat. and Solar Cells 92 (2008) 1500-1507.   http://dx.doi.org/10.1016/j.solmat.2008.06.015

 

  1. E.V. Johnson, Y. Djeridane, A. Abramov and P. Roca i Cabarrocas: “Experiment and modelling of very low frequency oscillations in RF-PECVD: a signature for nanocrystal dynamics”. Plasma Sources Science and Technolgy 17 (2008) 035029.

 

  1. S. Abolmasov, L. Kroely and P. Roca i Cabarrocas: “Negative corona in silane-argon-hydrogen mixtures at low pressures”. J. Phys. D: Appl. Phys. 41 (2008) 165203.

 

  1. K. Takeda, K. Morigaki, H. Hikita, and P. Roca i Cabarrocas: “Thermal annealing effects of dangling bonds in hydrogenated polymorphous silicon”. J. Appl. Phys. 104 (2008) 053715. DOI: 10.1063/1.2975975.

 

  1. J. Arbiol, A. Fontcuberta i Morral, S. Estradé, F. Peiró, B. Kalache, P. Roca i Cabarrocas and J. Ramon Morante: “Influence of teh (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires”. J. Appl. Phys. 104 (2008) 064312.

 

  1. P.-J. Alet, L. Eude, S. Palacin, P. Roca i Cabarrocas, "Transition from thin gold layers to nano-islands on TCO for catalyzing the growth of one-dimensional nanostructures", Physica Status Solidi (a), 205, 1429-1434 (2008) DOI: 10.1002/pssa.200778158

 

  1. Y. Djeridane, A. Abramov and P. Roca i Cabarrocas: “Silane versus silicon tetrafluoride in the growth of microcrystalline silicon films by standard radio frequency glow discharge”. Thin Solid Films 515 (2008) pp. 7451-7454.

 

  1. A.S. Gudovskikh, R. Chouffot, J. P. Kleider, N.A. Kaluzhniy, V.M. Lantratov, S.A. Mintairov, J. Damon-Lacoste, D. Eon, P. Roca i Cabarrocas and P.-J. Ribeyron: “New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements”. Thin Solid Films 516 (2008) pp. 6786-6790.

 

  1. Madhumita Nath, P. Roca i Cabarrocas, E.V. Johnson, A. Abramov, and P. Chatterjee: “The open circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity”. Thin Solid Films 516 (2008) pp. 6974-6978.

 

  1. M. Soro, A. Abramov, M.E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas and J.P. Kleider: “Polymorphous silicon thin films deposited at high rate: transport properties and density of states”. Thin Solid Films 516 (2008) pp. 6888-6891.

 

  1. Sanjay K. Ram, Md.N Islam, P. Roca i Cabarrocas and Satyendra Kumar: “Structural determination of nanocrystalline silicon films using ellipsometry and Raman spectroscopy”. Thin Solid Films 516 (2008) pp. 6863-6868.

 

  1. D. Muñoz, C. Voz, I. Martin, A. Orpella, J. Puigdollers, R. Alcubilla, F. Villar, J. Bertomeu, J. Andreu, J. Damon-Lacoste and P. Roca i Cabarrocas: “Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-wire CVD at 200 °C”. Thin Solid Films 516 (2008) pp. 761-764.

 

  1. D. Muñoz, C. Voz, I. Martin, A. Orpella, R. Alcubilla, F. Villar, J. Bertomeu, J. Andreu, P. Roca i Cabarrocas: “Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells”. Thin Solid Films 516 (2008) pp. 6782-6785.

 

  1. P. Leempoel, P. Descamps, T. Kervyn de Meerendré, J. Charliac, P. Roca i Cabarrocas, P. Bulkin, D. Daineka, T.H. Dao, J.P. Kleider, M.E. Gueunier-Farret, C. Longeaud: “Distributed electron cyclotron resonance plasma: A technology for large area deposition of device quality a-Si:H at very high rate”. Thin Solid Films 516 (2008) pp. 6853-6857.

 

  1. P. Roca i Cabarrocas, P. Bulkin, D. Daineka, T.H. Dao, P. Leempoel, P. Descamps, T. Kervyn de Meerendré and J. Charliac: “Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance”. Thin Solid Films 516 (2008) pp. 6834-6838.

 

  1. Pierre-Jean Alet, Linwei YU, Serge Palacin and Pere Roca i Cabarrocas : “Low-temperature growth of crystalline silicon nanowires on ITO with indium catalysts generated in-situ”. Journal of Materials Chemistry  (2008) 18, 5187 - 5189. DOI: 10.1039/B813046A

 

  1. P. Roura, J. Farjas and P. Roca i Cabarrocas: “Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon”. J. Appl. Phys. 104 (2008) 073521. DOI: 10.1063/1.2990767.

 

  1. P. Roca i Cabarrocas, Y. Djeridane, Th. Nguyen Tran, E.V. Johnson, A. Abramov and Q. Zhang: “Low temperature plasma synthesis of silicon nanocrystals: a strategy for high deposition rate and efficient polymorphous and microcrystalline solar cells”. Plasma Phys. Control. Fusion 50 (2008) 124037. doi: 10.1088/0741-3335/50/12/124037.

 

  1. Linwei Yu, Pierre-Jean Alet, Gennaro Picardi, Isabelle Maurin and Pere Roca i Cabarrocas : « Synthesis, morphology and compositional evolution of silicon nanowires directly grown on SnO2 substrates”. Nanotechnology 19 (2008) 485605. http://www.iop.org/EJ/abstract/0957-4484/19/48/485605/

 

  1. R. Chouffot, A. Brezard-Oudot, J.-P. Kleider, R. Brüggemann, M. Labrune, P. Roca i Cabarrocas and P.-J. Ribeyron: “Modulated photoluminescence as an effective lifetime measurement method: Application to a-Si:H/c-Si heterojunction solar cells”. Mat. Sci. and Eng. B (2008).

 

  1. Alexei Abramov, Pere Roca i Cabarrocas, Kunal Girotra, Hong Chen, Seungkyu Park, Kyongtae Park, Jong-moo Hyh, Joonhoo Choi, Chiwoo Kim and Jun H. Souk: “Reliable characterization of microcrystalline silicon films for thin film transistor applications”. Jpn. J. Appl. Phys. 47 (2008) pp. 7308-7301. DOI: 10.1143/JJAP.47.7308.

 

  1. R. Negru, Y. Bonnassieux, S. Tchakarov, and P. Roca i Cabarrocas: “A new p+-i-n+ photodiode SPICE model for CMOS pixel applications”. Eur. Phys. J. Appl. Phys. 41, 205–213 (2008). DOI: 10.1051/epjap:2008019.

 

  1. S.N. Abolmasov, L. Kroely and P. Roca i Cabarrocas: “Negative corona discharge: application to nanoparticle detection in RF reactors”. Plasma sources Sci. and Technol. 18 (2009) 015005. doi:10.1088/0963-0252/18/1/015005.

 

  1. Y. Djeridane, P. Roca i Cabarrocas, Ka Hyun Kim, Se Hwan Kim, Jung Bo Bae, Jun Young Jeong, and Jing Jang: “Fabrication and characterization of ion-doped p-type nanocrystalline silicon thin film transistors”. Journal of the Korean Physical Society 54 (2009) pp. 437-440.

 

  1. A. Hadjadj, N. Pham, P. Roca i Cabarrocas, and O. Jbara: “Effect of doping on the amorphous to microcristalline transition in a hydrogenated amorphous silicon under hydrogen plasma treatment”. Appl. Phys. Lett. 94 (2009) 061909.  doi: 10.1063/1.30866.

 

  1. Linwei Yu, Pierre-Jean Alet, Gennaro Picardi, and Pere Roca i Cabarrocas: “An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires”. Phys. Rev. Lett. 102 (2009) 125501. DOI: 10.1103/PhysRevLett.102.1255. Distinguished as Editors' Suggestion. Selected for the April 6, 2009 issue of Virtual Journal of Nanoscale Science & Technology.

 

  1. J. Damon-Lacoste and P. Roca i Cabarrocas: “Towards a better physical understanding of a-Si:H/c-Si heterojunction solar cells”. J. Appl. Phys. 105 (2009) 063712. DOI: 10.1063/1.3091283.

 

  1. I. Zardo, L. Yu, S. Conesa-Boj, S. Estradé, Pierre Jean Alet, J. Rössler, M. Frimmer, P. Roca i Cabarrocas, F. Peiró, J. Arbiol, J.R. Morante, and A. Fontcuberta i Morral: “Gallium assisted plasma enhanced chemical vapour deposition of silicon nanowires”. Nanotechnology 20 (2009) 155602. doi:10.1088/0957-4484/20/15/155602.

 

  1. Linwei Yu, Benedict O’Donnnell, Pierre Jean-Alet, S. Conesa-Boj, F. Peiró, J. Arbiol, and P. Roca i Cabarrocas: “Plasma enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts”. Nanotechnology 20 (2009) 225604.

 

  1. P. Roura, J. Farjas and P. Roca i Cabarrocas: “Restricted epitaxial growth of crystallites in hydrogenated nanocrystalline silicon during thermal crystallization experiments”. J. Nanoscience and Nanotechnology 9 (2009) pp. 3700-3707.

 

  1. E.V. Johnson, L. Kroely and P. Roca i Cabarrocas: “Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin film photovoltaics”. Solar Energy Mat. and Solar Cells  93 (2009) 1904-1906.doi:10.1016/j.solmat.2009.06.018

 

  1. F. Kail, J. Farjas, P. Roura and P. Roca i Cabarrocas : "Molecular hydrogen diffusion in nanostructured amorphous silicon thin films”. Phys. Rev. B. 80  (2009) 073202-1 à 4, DOI: 10.1103/PhysRevB.80.073202. Selected for the August 31, 2009 issue of Virtual Journal of Nanoscale Science & Technology

 

  1. L. Yu and P. Roca i Cabarrocas : "Initial nucleation and growth of in-plane solid-liquid-solid silicon nanowires catalyzed  by tin”. Phys. Rev. B 80 (2009) 085313. DOI: 10.1103/PhysRevB.80.085313

 

  1. J.P. Kleider, R. Chouffot, A.S. Gudovskikh, P. Roca i Cabarrocas, M. Labrune, P.-J. Ribeyron, and R. Brüggeman: “Electronic and structural properties of the amorphous/crystalline silicon interface”. Thin Solid Films 517 (2009) pp 6386-6391. doi:10.1016/j.tsf.2009.02.092.

 

  1. P.-J. Alet, S. Palacin, P. Roca i Cabarrocas, "Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts", Thin Solid Films 517 (2009) pp. 6405-6408.  doi:10.1016/j.tsf.2009.02.106.

 

  1. P. Roura, J. Farjas, and P. Roca i Cabarrocas: “Characterization of amorphous and nanostructured Si films by differential scanning calorimetry”. Thin Solid Films 517 (2009) pp. 6239-6242.  doi:10.1016/j.tsf.2009.02.081.

 

  1. N. Pham, A. Hadjadj, P. Roca i Cabarrocas, O. Jbara and F. Kail: “Interpretation of the hydrogen evolution during deposition of microcrystalline silicon by chemical transport”. Thin Solid Films 517 (2009) pp. 6229.  doi:10.1016/j.tsf.2009.02.072.

 

  1. R. Chouffot, A. Brezard-Oudot, J.-P. Kleider, R. Brüggemann, M. Labrune, P. Roca i Cabarrocas and P.-J. Ribeyron: “Modulated photoluminescence as an effective lifetime measurement method: Application to a-Si:H/c-Si heterojunction solar cells”. Materials Science and Engineering B 159-160 (2009) pp. 186-189.

 

  1. A. Datta, J. Damon-Lacoste, M. Nath, P. Roca i Cabarrocas and P. Chatterjee: “Dominant role of interfaces in solar cells with N-a-Si:H/Pc-Si heterojunction with intrinsic thin layer”. Materials Science and Engineering B 159-160 (2009) pp. 10-13.

 

  1. S. K. Ram, Md. Nazrul Islam, S. Kumar and P. Roca i Cabarrocas: “Evidence of bimodal crystallite size distribution in µc-Si:H films”. Materials Science and Engineering B 159-160 (2009) pp. 34-37.

 

  1. N. Pham, Y. Djeridane, A. Abramov, A. Hadjadj, and P. Roca i Cabarrocas: “Role of hydrogen in the peeling of hydrogenated microcrystalline silicon films”. Materials Science and Engineering B 159-160 (2009) pp. 27-30.

 

  1. L. Yu, M. Oudwan, O. Moustpha, F. Fortuna and P. Roca i Cabarrocas: “Guided growth of in-plane silicon nanowires”. Appl. Phys. Lett. 95 (2009) 113106. doi:10.1063/1.3227667. Selected for the September 28, 2009 issue of Virtual Journal of Nanoscale Science & Technology. Vol. 20, Issue 13.

 

  1. M. Oudwan, Oumkelthoum Moustapha, Alexey Abramov, Dmitriy Daineka, Yvan Bonnassieux, and Pere Roca i Cabarrocas: “Threshold voltage shift underelectrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors”. Phys. Stat. Solidi A 207 (2009) pp. 1245-1248.  DOI:10.1002/pssa.200925403.

 

  1. M .Labrune, M. Moreno and P. Roca i Cabarrocas: “Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous doped films at 175 °C by rf-PECVD”. Thin Solid Films 518 (2009) 2528-2530, doi:10.1016/j.tsf.2009.09.143

 

  1. Linwei Yu, Benedict O’Donnell, Pierre-Jean Alet, S Conesa-Boj, F Peiro, J Arbiol and Pere Roca i Cabarrocas: “Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts”. Nanotechnology 20 (2009) 225604. doi:10.1088/0957-4484/20/22/225604.

 

  1. E.V. Johnson, F. Dadouche, M.E. Gueunier-Farret, J.P. Kleider and P. Roca i Cabarrocas: “Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells”.  Phys. Status Solidi A, 207 (2010) pp. 691-694 / DOI 10.1002/pssa.200982723

 

  1. M. Moreno, M. Labrune, and P. Roca i Cabarrocas: “Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation”. Solar Energy Materials and Solar Cells, 94 (2010) pp. 402-405. doi:10.1016/j.solmat.2009.10.016, 

 

  1. M. Foldyna, M. Moreno, P. Roca i Cabarrocas, and A. de Martino : "Scattered light measurements on textured crystalline silicon substrates using angle-resolved Mueller matrix polarimeter”. Applied Optics 49 (2010) pp. 505-512. doi:10.1364/AO.49.000505

 

  1. A. Hadjadj, N. Pham, P. Roca i Cabarrocas, and O. Jbara: "Self-bias voltage diagnostics for the amorphous-to-microcrystalline transition in a-Si:H under a hydrogen-plasma treatment”. J. Vac. Sci. Technol. A 28 (2010) pp. 309-313. DOI: 10.1116/1.3305719.

 

  1. L. Yu and P. Roca i Cabarrocas: “Growth mechanism and dynamics of in-plane solid-liquid-solid silicon nanowires”. Phys. Rev. B 81 (2010) 085323 1-11, DOI: 10.1103/PhysRevB.81.085323. Selected for the March 1, 2010 issue of Virtual Journal of Nanoscale Science & Technology.

 

  1. M. Rahmouni, A. Datta, P. Chatterjee, J. Damon-Lacoste, C. Ballif and P. Roca i Cabarrocas: “Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study”. J. Appl. Phys. 107 (2010) 054521. doi: 10.1063/1.3326945.

 

  1. K. Morigaki, H. Hikita, K? Takeda, and P. Roca i Cabarrocas: ”The kinetics of ligth-induced defect creation in hydrogenated polymorphous silicon – stretched exponential relaxation”. Phys. Status Solidi C 7 (2010) 692-695. DOI 10.1002/psc.200982683.

 

  1. M. Moreno, D. Daineka and P. Roca i Cabarrocas: “Plasma texturing for silicon solar cels: from pyramids to inverted pyramids-like structures”. Solar Energy Materials and Solar Cells, 94 (2010) 733-737. doi:10.1016/j.solmat.2009.12.015

 

  1. M. Moreno, D. Daineka and P. Roca i Cabarrocas: “Plasmas for texturing, cleaning, and deposition: towards one pump down process for heterojunction solar cells”. Phys. Stat. Sol. C 7, No. 3–4, 1112–1115 (2010) / DOI 10.1002/pssc.200982704.

 

  1. A. Abramov and P. Roca i Cabarrocas: “Addition of SiF4 to standard SiH4+H2 plasma: an effective way to reduce oxygen contamination in µc-Si:H films”. Phys. Stat. Sol. C 7, No. 3–4, 529– 532 (2010) / DOI 10.1002/pssc.200982798.

 

  1. W. Favre, M. Labrune, F. Dadouche, A.S. Gudovskihh, P. Roca i Cabarrocas and J.P. Kleider: “Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements”. Phys. Status Solidi C 7, No. 3–4, 1037– 1040 (2010) / DOI 10.1002/pssc.200982800.

 

  1. S. K. Ram, L. Kroely, S. Kasouit, P. Bulkin and P. Roca i Cabarrocas: “Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system”. Phys. Status Solidi C 7, No. 3–4, 553– 556 (2010) / DOI 10.1002/pssc.200982817.

 

  1. L. Kroely, S. K. Ram, P. Buklin and P. Roca i Cabarrocas: “Microcrystalline silicon films and solar cells deposited at high rate by matrix distributed electron cyclotron resonance (MDECR). Phys. Status Solidi C 7, No. 3–4, 517–520 (2010) / DOI 10.1002/pssc.200982789.

 

  1. M. Nath, S. Chakraborty, K. H. Kim, E. V. Johnson, P. Roca i Cabarrocas, and P. Chatterjee: “Performance of amorphous and microcrystalline silicon pin solar cells under variable ligth intensity”. Phys. Status Solidi C 7, No. 3–4, 1105– 1108 (2010) / DOI 10.1002/pssc.200982726.

 

  1. O. Moustapha, A. Abramov, D. Daineka, M. Oudwan, Y. Bonnassieux, and P. Roca i Cabarrocas: “Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors”. Phys. Status Solidi C 7, No. 3–4, 1140–1143 (2010) / DOI 10.1002/pssc.200982782.

 

  1. S. K. Ram, L. Kroely, P. Bulkin and P. Roca i Cabarrocas: “Effect of ion energy on stgructural and electrical properties of intrinsic microcrystalline silicon layers deposited in a matrix distributed electron cyclotron resonance plasma reactor”. Phys. Status Solidi A 207, No. 3, 591–594 (2010) / DOI 10.1002/pssa.200982905.

 

  1. Sonia Conesa-Boj, Ilaria Zardo, Sonia Estradé, Linwei Yu, Pierre Jean Alet, Pere Roca i Cabarrocas, Joan Ramon Morante, Francesca Peiro, Anna Fontcuberta i Morral and Jordi Arbiol: “Defect formation on Ga-Catalyzed Silicon Nanowires”. Crystal Growth & Design, Vol. 10, No. 4 (2010) pp. 1534-1543. DOI: 10.1021/cg900741y.

 

  1. A. Hadjadj_ N. Pham, P. Roca i Cabarrocas, O. Jbara, and G. Djellouli: “Ellipsometry investigation of the amorphous-to-microcrystalline transition in a-Si:H under hydrogen plasma treatment”. J. Appl. Physics 107 (2010) 083509.

 

  1. I. Zardo, S; Conesa-Boj, S. Estradé, L. Yu, F. Peiro, P. Roca i Cabarrocas, J.R. Morante, J. Arbiol, A. Fontcuberta i Morral: “Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition”. Appl. Phys. A 100 (2010) pp 287-296; DOI 10.1007/s00339-010-5802-1.

 

  1. M. Nath S. Chakraborty, E.V. Johnson, A. Abramov, P. Roca i Cabarrocas, and P. Chatterjee: “Performance of microcrystalline silicon single and double junction solar cells of different degrees of crystallinity”. Solar Energy Materials and Solar Cells 94 (2010) 1477–1480. doi:10.1016/j.solmat.2010.02.048.

 

  1. Ounsi El Daif, Emmanuel Drouard, Guillaume Gomard, Anne Kaminski, Alain Fave, Mustapha Lemiti, Sungmo Ahn, Sihan Kim, Pere Roca i Cabarrocas, Heonsu Jeon, Christian Seassal: “Absorbing one-dimensional planar photonic crystal for amorphous silicon solar cell”. Optics Express 13 September 2010 / Vol. 18, No. 103 / OPTICS EXPRESS A293

 

  1. Linwei Yu, Benedict O’Odonnell, Jean-Luc Maurice and Pere Roca i Cabarrocas: “Core-shell structure and unique faceting of Sn-crystallized silicon nanowires”. Appl. Phys. Lett. 97 (2010) 023107. doi:10.1063/1.3464557

 

  1. F. Kail, J. Farjas, P. Roura, C. Secouard, O. Nos, J. Bertomeu, F. Alzina, and P. Roca i Cabarrocas : "Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments”. Appl. Phys. Lett. 97 (2010) 031918. doi:10.1063/1.3464961.

 

  1. L. Yu, Benedict O’Donnell, Pierre-Jean Alet, and Pere Roca i Cabarrocas  “All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application”. Solar Energy Materials and Solar Cells 94 (2010) 1855–1859. doi:10.1016/j.solmat.2010.06.021

 

  1. L. Borowik, K. Kusiaku, D. Deresmes, D. Théron, H. Diesinger, Th. Melin, T. Nguyen-Tran, and P. Roca i Cabarrocas: “Mapping charge transfers between quantum levels using non contact atomic force microscopy”. Phys. Rev. B 82 (2010) 073302. DOI: 10.1103/PhysRevB.82.073302.

 

  1. M. Moreno and P. Roca i Cabarrocas: “Ultra-thin crystalline silicon films produced by plasma assisted epitaxial growth on silicon wafers and their transfer to foreign substrates”. EPJ Photovoltaics 1, 10301 (2010). DOI: 10.1051/epjpv/20110001.

 

  1. C. Longeaud, P.P. Ray, A. Bhaduri, D. Daineka, E.V. Johnson, and P. Roca i Cabarrocas: “Aluminum recycling from reactor walls: a source of contamination in a-Si:H thin films”. J. Vac. Sci. Technol. A 28 (2010) pp. 1381-1387. DOI: 10.1116/1.3503620

 

  1. François Templier, Julien Brochet, Bernard Aventurier, David Cooper, Alexey Abramov, Dmitri Daineka and Pere Roca i Cabarrocas: “Polymorphous silicon: a promising material for thin film transistors for low cost and high performance active-matrix OLED displays”. IEICE Trans. Electron. Vol 93 (2010) 1490-1494.

 

  1. Junzhuan Wang, V. Suendo, A. Abramov, Linwei Yu and Pere Roca i Cabarrocas: “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism. Appl. Phys. Lett.  97 (2010) 221113.

 

  1. K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, C. Longeaud, S. Reynold, and P. Roca i Cabarrocas: “Structure-rrelated strain and stress in thin hydrogenated microcrystalline silicon”. Journal of Physics: Conference series 253 (2010) 012056. doi:10.1088/1742-6596/253/1/012056.

 

  1. Jean-Paul Kleider, Jose Alvarez, Alexander Vitalievitch Ankudinov, Alexander Sergeevith Gudovskikh, Ekaterina Vladimirovna Gushchina, Martin Labrune, Olga Alexandrovna Maslova, Wilfried Favre, Marie-Estelle Gueunier-Farret, Pere Roca i Cabarrocas, and Eugene Ivanovitch Terukov: “Characterization of silicon heterojunctions for Solar Cells”. Nanoscale Research Letters. 16 Feb. 2011. http://www.nanoscalereslett.com/content/6/1/152

 

  1. Linwei Yu, Franck Fortuna, Benedict O’Donnell, Gilles Patriarche, and Pere Roca i Cabarrocas : “Stability and evolution of low-surface-tension metal catalyzed growth of silicon nanowires”. Appl. Phys. Lett.  98 (2011) 123113. doi:10.1063/1.3569817. Selected by the Virtual Journal of Nanoscale Science & Technology, April 4 , 2011.

 

  1. F. Dadouche, O. Béthouw, M.E. Gueunier-Farret, E.V. Johnson, P. Roca i Cabarrocas, C.Marchand and J.P. Kleider: “Geometrical optimization and electrical performance comparison of thin-film tandem structures based on pm-Si:H and µc-Si:H using computer simulation”. PV-Direct 2, 20301 (2011).  DOI: 10.1051/pvd/2011001

 

  1. Xianqin Meng, Guillaume Gomard, Ounsi El Daif, Emmanuel Drouard, Regis Orobtchouk, Anne Kaminski, Alain Fave, Mustapha Lemiti, Alexey Abramov, Pere Roca i Cabarocas, and Christian Seassal: “Absorbing photonic crystals for silicon thin-film solar cells: design, fabrication and experimental investigation”. Solar Energy Materials and Solar Cells

 

  1. R. Cariou, M. Labrune and P. Roca i Cabarrocas : " Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD"  Solar Energy Materials and Solar Cells. 95 (2011) 2260–2263, doi: 10.1016/j.solmat.2011.03.038.

 

  1. Chisato Niikura, Pere Roca i Cabarrocas and Jean-Eric Bourée: “Structural properties of microcrystalline silicon films prepared by hot-wire/catalytic chemical vapour deposition under conditions close to the transition from amorphous to microcrystalline growth”. Thin Solid Films 519 (2011) 4502-4505. doi:10.1016/j.tsf.2011.01.329.

 

  1. Linwei Yu and Pere Roca i Cabarrocas: “Morphology control and growth dynamics of in-plane solid-liquid-solid silicon nanowires”. Physica E doi:10.1016/j.physe.2011.06.005.

 

  1. E.V. Johnson, P. Prod’homme, C. Boniface, K. Huet, T. Emeraud, and P. Roca i Cabarrocas: ”Excimer laser annealing and chemical texturing of ZnO:Al sputtered at room temperature for photovoltaic applications”. Sol. Energy Mater. Solar Cells 95, (2011) 2823. DOI: 10.1016/j.solmat.2011.05.043.

 

  1. I. Martin, M. Labrune, A. Salomon, P. Roca i Cabarrocas, and R. Alcubilla : "Laser fired contacts applied to rear surface of heterojunction solar cells". Solar Energy Materials & Solar Cells 95 (2011) pp. 3119-3123. Doi: 10.1016/j.solmat.2011.06.049.

 

  1. F. Kail, J. Farjas, P. Roura, C. Secouard, O. Nos, J. Bertomeu, and P. Roca i Cabarrocas  :"The configurational energy gap between amorphous and crystalline silicon”. Physica Status Solid (RRL). 19 SEP 2011, DOI: 10.1002/pssr.201105333.

 

  1. L. Yu, W. Chen, B. O’Donnell, G. Patriarche, S. Bouchoule, Ph.  Pareige, R. Rogel, A.-C. Saalun, L. Pichon, and P. Roca i Cabarrocas : "Growth-in-place deployement of in-plane silicon nanowires". Appl. Phys. Lett. 99 (2011) 203104. [doi:10.1063/1.3659895]. Selected by Virtual Journal of  Nanoscale Science and Technology, November 28 (2011). Highlighted in the January 2012 issue of Nature Materials.

 

  1. M. Nath, S. Chakraborty, E.V. Johnson, A. Abramov, P. Roca i Cabarrocas, and P. Chatterjee: “Factors limiting the open circuit voltage in microcrystalline silicon solar cells”. EPJ Photovoltaics, 2 (2011) 20101. DOI: 10.1051/epjpv/2011025.

 

  1. C. Charpentier, P. Prod’homme, I.Maurin, M. Chaigneau, and P. Roca i Cabarrocas: “X-Ray diffraction and Raman spectroscopy for a bette understanding of ZnO:Al growth process”. EPJ Photovoltaics, (2011), DOI: 10.1051/epjpv/2011026.

 

  1. J. Alvarez, I. Ngo, M.E. Guelier-Farret, J.P. Kleider, L. Yu, P. Roca i Cabarrocas, S. Perraud, E. Rouvière, C. Celle, C. Mouchet, J.P. Simonato: “Conductive atomic force microscopy characterization of silicon nanowires”. Nanoscale Research Letters  6 (2011) 110,  http://www.nanoscaleresslett.com/contents/6/1/110.

 

  1. R. Darwich and P. Roca i Cabarrocas: “Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques”. Thin Solid Films 519 (2011) 5473–5480. doi:10.1016/j.tsf.2011.03.019.

 

  1. R. Darwich and P. Roca i Cabarrocas: “High deposition rate hydrogenated  polymorphous silicon characterized by different characterization techniques”. Thin Solid Films 519 (2011) 5364–5370. doi:10.1016/j.tsf.2011.02.038.

 

  1. M. Moreno, R. Boubekri and P. Roca i Cabarrocas: “Study of the effects of different fractions of large grains of µc-Si:H:F films on the infrared absorption on thin film solar cells”. Sol. Energy Mater. Sol. Cells 100 (2012) 16-20, doi:10.1016/j.solmat.2011.05.030.

 

  1. S. N. Abolmasov, P. A. Cormier, A. Torres Rios, R. Dussart, N. Semmar, A.L. Thomann, and P. Roca i Cabarrocas: “Probing dusty-plasma/surface interactions with a heat flux microsensor”. Appl. Phys. Lett.  100, 011601 (2012); doi: 10.1063/1.3674290.

 

  1. F. Kail, J. Molera, J. Farjas, P. Roura, C. Secouard and P. Roca i Cabarrocas : “Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon". J. Phys.: Condens. Matter 24 (2012) 095401. 095401 doi:10.1088/0953-8984/24/9/095401

 

  1. Junzhuan Wang, Linwei Yu, Sergey Abolmasov, Ka Hyun Kim and Pere Roca i Cabarrocas:  “Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon”. J. Appl. Phys. 111, (2012) 053108. doi.org/10.1063/1.3691904.

 

  1. Linwei Yu, Bendict O’Donnell, Martin Foldyna, and Pere Roca i Cabarrocas: “Radial junction solar cells on PECVD-grown silicon nanowires”. Nanotechnology 23 (2012) 194011,  stacks.iop.org/Nano/23/000000.

 

  1. D. Murias, C. Reyes-Betanzo, M. Moreno, A. Torres, A. Itzmoyotl, R. Ambrosio, M. Soriano, J. Lucas, P. Roca i Cabarrocas: “Black Silicon formation using dry etching for solar cells applications”. Materials Science and Engineering B 177 (2012) pp. 1509-1513. doi:10.1016/j.mseb.2012.03.038.

 

  1. Ka-Hyun KIM, Erik V. Johnson and Pere Roca i Cabarrocas: “Irreversible light-induced degradation and stabilization of hydrogenated polymorphous silicon solar cells”. Solar Energy Mat. and Solar Cells 105 (2012) 208-212. http://dx.doi.org/10.1016/j.solmat.2012.06.026.

 

  1. K. Kristova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, Ch. Longeaud, S. Reynolds, and P. Roca i Cabarrocas: “Stress Characterization of Thin Microcrystalline Silicon Films”. International Review of Physics (I.R/E.PHY.) 6 (2012) pp. 106-112.

 

  1. Linwei Yu, Franck Fortuna, Benedict O’Donnell, Taewoo Jeon, Martin Foldyna, Gennaro Picardi and Pere Roca i Cabarrocas: Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells”. Nano Letters 12 (2012) pp. 4153-4158. DOI: 10.1021/nl3017187.

 

  1. Ka Hyun Kim, Erik V. Johnson, Alexey Abramov, and P. Roca i Cabarrocas: “Ligth Induced electrical and topological changes in hydrogenated polymorphous silicon solar cells”.  EPJ Photovoltaics 3 (2012) 30301. DOI: 10.1051/epjpv/2012005.

 

  1. D. Senouci, R. Baghdad, A. Belfedal, L. Chahed, X. Portier, S. Charvet, K.H. Kim, P. Roca i Cabarrocas, and K. Zellama: “ Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature”. Thin Solid Films 522 (2012) pp. 186-192; doi: 10.1016/j.tsf.2012.08.014

 

  1. J. Cho, B. O’Donnell, Ka Huyn Kim, I. Ngo, L. Yu, and P. Roca i Cabarrocas : " Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass” Progress in Photovoltaics Research Applications (2012).  DOI: 10.1002/pip.1245.

 

  1. P. Roca i Cabarrocas, R. Cariou and M. Labrune: “ Low temperature plasma deposition of silicon thin films: from amorphous to crystalline”. J. Non Cryst. Solids 358 (2012) pp. 2000-2003. doi:10.1016/j.jnoncrysol.2011.12.113.

 

  1. Benedict O’Donnell, Linwei Yu, M. Foldyna and P. Roca i Cabarrocas: “Silicon nanowire solar cells grown by PECVD”. J. Non Cryst. Solids 358 (2012) 2299-2302. doi:10.1016/j.jnoncrysol.2011.11.026.

 

  1. A. Datta, Mun-Ho Song, J. Wang, M. Labrune, S. Chakroborty, P. Roca i Cabarrocas, P. Chatterjee: “Photoluminescence spectrum from heterojunction with intrinsic thin layer solar cells: An efficient tool for estimating wafer surface defects”. Journal of Non-Crystalline Solids 358 (2012) 2241–2244. doi:10.1016/j.jnoncrysol.2011.12.084.

 

  1. Taewo JEON, Bernard Geffroy, Denis Tondelier, Linwei Yu, Pascale Jegou, Bruno Jousselme, Serge Palacin, Pere Roca i Cabarrocas, and Yvan Bonnassieux: “Effects of acid-treated silicon nanowires on hybrid solar cells performance”. Solar Energy Materials and Solar Cells. 117 (2013) 632–637.  http://dx.doi.org/10.1016/j.solmat.2012.09.015.

 

  1. Inès Masiot, Clément Colin, Nicolas Péré-Laperne, Pere Roca i Cabarrocas, Christophe Sauvan, Philippe Lalanne, Jean-Luc Pelouard, and Stéphane Colin : "Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cells".Appl. Phys. Lett. 101 (2012) 163901.  Appl. Phys. Lett. 101, 163901 (2012); doi: 10.1063/1.4758468.

 

  1. L.Yu, M. Foldyna, B. O’Donnell, G. Picardi, and P. Roca i Cabarrocas: “Building radial junction thin-film solar cells on silicon nanowires”. SPIE Newsroom. 10.1117/2.1201204.004224

 

  1. Mohamed Boutchich, Jose Alvarez, Djicknoum Diouf, Pere Roca i Cabarrocas, Leyong Liao, Imura Masataka, Yasuo Koide and Jean-Paul Kleider: “Amorphous silicon diamond based heterojunctions with high rectification ratio”. J. non Cryst. Solids 358 (2012) pp. 2110-2133. doi:10.1016/j.jnoncrysol.2011.12.067

 

  1. M. Labrune, X. Bril, G. Patriarche, L. Largeau, O. Mauguin, and P. Roca i Cabarrocas : "Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C". EPJ Photovoltaics 3, 30303 (2012). DOI: 10.1051/epjpv/2012010.

 

  1. Jean-Christophe Dornstetter, Samir Kasouit, and Pere Roca i Cabarrocas: “Deposition of High-Efficiency Microcrystalline Silicon Solar Cells Using SiF4/H2/Ar Mixtures”. IEEE Journal of Photovoltaics, (2012) DOI : 10.1109/JPHOTOV.2012.2221683.

 

  1. S. Chakraborty, R. Cariou, M. Labrune, P. Roca i Cabarrocas, and P. Chatterjee: “Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study”. EPJ Photovoltaics 4, 45103 (2013).  DOI: 10.1051/epjpv/2013014.

 

  1. Inès Massiot, Clément Colin, Christophe Sauvan, Philippe Lalanne, Pere Roca i Cabarrocas, Jean-Luc Pelouard, and Stéphane Collin: “Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowires”. Optics Express Vol. 21, Iss. S3, pp. A372–A381 (2013). DOI:10.1364/OE.21.000372 | OPTICS EXPRESS A374.

 

  1. P. Roura, F.Taïr, J.Farjas and P.Roca i Cabarrocas: “Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon”. J. Appl. Phys.  113, 173515 (2013) [http://dx.doi.org/10.1063/1.4803888]

 

  1. S. Chakraborty, A. Datta, M. Labrune, P.  Roca i Cabarrocas, P. Chatterjee: “A modeling study of the performance of conventional diffused P/N junction and heterojunction solar cells at different temperatures”. EPJ Photovoltaics 4, 40101 (2013). DOI: 10.1051/epjpv/2013021.

 

  1. M. Chaigneau, E.V. Johnson, L. Kroely, P. Roca i Cabarrocas, R. Ossikovski: “Polarized Raman spectroscopy analysis of SiHX bonds in nanocrystalline silicon thin films”. Thin Solid Films 537 (2013) 145–148. http://dx.doi.org/10.1016/j.tsf.2013.03.021.

 

  1. Linwei Yu, Lorenzo Riguti, Maria Tchernycheva, Soumyadeep Misra, Martin Foldyna, Gennaro Picardi, and P. Roca i Cabarrocas: “Assessing individual radial junction solar cells over millions of VLS-grown silicon nanowires”. Nanotechnology 24 (2013) 275401 (8pp). doi:10.1088/0957-4484/24/27/275401.

 

  1. Ka-Hyun Kim, Bicher Haj Ibrahim, Erik V. Johnson, Antonello de Martino, and Pere Roca i Cabarrocas: “Real-time transmission Mueller polarimetry on hydrogenated polymorphous silicon under current injection”. J. Phys. D: Appl. Phys. 45 (2013) 045304, doi:10.1088/0022-3727/46/4/045304

 

  1. Mario Moreno, Gilles Patriarche and Pere Roca i Cabarrocas: “Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C”. Journal of Materials Research, volume 28 (2013) pp. 1626-1632. DOI: 10.1557/jmr.2013.52.

 

  1. Soumyadeep Misra, Linwei Yu, Wanghua Chen, and Pere Roca i Cabarrocas: Wetting Layer: the Key Player in Plasma-assisted Silicon Nanowire Growth Mediated by Tin”. The Journal of Physical Chemistry 117 (2013) pp. 17786-17tress790.

 

  1. M. Foldyna, L. Yu and P. Roca i Cabarrocas: “Theoretical short-circuit current density for different geometries and organizations of silicon nanowires in solar cells”. Solar Energy Materials and Solar Cells 117 (2013) pp. 645-651, http://dx.doi.org/10.1016/j.solmat.2012.10.014.

 

  1. S. Misra, L. Yu, M. Foldyna, and P. Roca i Cabarrocas: “High efficiency and Stable Hydrogenated Amorphous Silicon Radial Junction Solar Cells built on VLS-grown Silicon Nanowires”. Solar Energy Materials and Solar Cells 118 (2013) pp. 90-95 http://dx.doi.org/10.1016/j.solmat.2013.07.036

 

  1. Antonín Fejfar, Matěj Hývl, MartinLedinský, AliakseiVetushka, Jiří Stuchlík, Jan Kočka, SoumyadeepMisra, BenedictO’Donnell, Martin Foldyna, Linwei Yu, and Pere RocaiCabarrocas : “Microscopic measurements of variations in local (photo)electronic properties in nanostructured solar cells”. Solar Energy Materials and Solar Cells 119, 228  (2013), http://dx.doi.org/10.1016/j.solmat.2013.07.042.

 

  1. Bentouba Said, Hamouda Messaoud, Slimani Aek, Pere Roca i Cabarrocas, Bourouis Mahmoud, Coronas Alberto, Draoui Belkacem, Boucherit Med Seghirh: “Hybrid System and Environmental Evaluation Case House In South of Algeria”. Energy Procedia 36 ( 2013 ) pp. 1328 – 1338. doi: 10.1016/j.egypro.2013.07.151

 

  1. L. Borowik, T. Nguyen-Tran, P. Roca i Cabarrocas, and T. Melin: “Doped semiconductor nanocrystal junctions”. J. Appl. Phys. 114 (2013) 204305. http://dx.doi.org/10.1063/1.4834516.

 

  1. Martin Foldyna, Linwei Yu, Soumyadeep Misra, and Pere Roca i Cabarrocas: “Using nanowires to enhance light trapping in solar cells”. SPIE Newsroom, 5 December 2013. Doi 10.1117/2.1201311.005205

 

  1. B.A. Andreev, L.V. Gavrilenko, Yu.N. Drozdov, P.A. Yunin, D.A. Pryakhina, L.A. Mochalov, P.G. Sennikov, P. Bulkin, P. Roca i Cabarrocas : “Raman spectra of amorphous isotope-enriched 74Ge with low-strained Ge nanocrystals”. Thin Solid Films (2013) http://dx.doi.org/10.1016/j.tsf.2013.12.014.

 

  1. Rym Boukhicha, Coralie Charpentier, Patricia Prod'Homme, Pere Roca i Cabarrocas, Jean-François Lerat, Thierry Emeraud, Erik Johnson : "Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films”. Thin Solid Films 555 (2014) 13-17. http://dx.doi.org/10.1016/j.tsf.2013.08.014.

 

  1. Ka-Hyun Kim, Samir Kasouit, Erik V.Johnson, and Pere Roca i Cabarrocas: “Substrate versus superstrate configuration for stable thin film silicon solar cells”. Solar Energy Materials and Solar Cells 119 (2013) 124–128. http://dx.doi.org/10.1016/j.solmat.2013.05.045.

 

  1. M. Moreno, D. Murias, J. Martinez, C. Reyes-Betanzo, A. Torres, R. Ambrosio, P. Roca i Cabarrocas, and M. Escobar: “A comparative study of wet and dry texturing processes of c-Si wafers for the fabrication of solar cells”. Solar Energy 101 (2014) pp. 189-191. http://dx.doi.org/10.1016/j.solener.2014.01.004.

 

  1. Guillaume Gomard, Guillaume Gomard, Romain Peretti, Ségolène Callard,Xianqin Meng, Remy Artinyan, Thierry Deschamps, Pere Roca i Cabarrocas, Emmanuel Drouard, and Christian Seassal: “Blue light absorption enhancement based on vertically channelling modes in nano-holes arrays”. Appl. Phys. Lett. 104 (2014) 051119, http://dx.doi.org/10.1063/1.4864267.

 

  1. Amornrat Limmanee, Joaquim Nassar, Igor P. Sobkowicz, Jaran Sritharathikhun, Kobsak Sriprapha, Guillaume Courtois, Francois Moreau, and Pere Roca i Cabarrocas: “Characterization of a-Si:H/c-Si Hetero-Junctions by Time Resolved Microwave Conductivity Technique”. International Journal of Photoenergy. Volume 2014, Article ID 304580, 4 pages. http://dx.doi.org/10.1155/2014/304580.

 

  1. Linwei Yu, Soumyadeep Misra, Junzhuan Wang, Shengyi Qian, Martin Foldyna, Jun Xu, Yi Shi, Erik Johnson, and Pere Roca i Cabarrocas: “Understanding Light Harvesting in Radial Junction Amorphous Silicon Thin Film Solar Cells”. Scientific Reports DOI: 10.1038/srep04357. March 2014.

 

  1. D.А. Mansfeld, А.V. Vodopyanov, S.V. Golubev, P.G. Sennikov, L.A. Mochalov, B.А. Andreev, Yu N. Drozdov, М.N. Drozdov, V.I. Shashkin, P. Bulkin, P. Roca i Cabarrocas: “Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24 GHz) plasma from silicon tetrafluoride precursor”. Thin Solid Films 562 (2014) 114-117.  http://dx.doi.org/10.1016/j.tsf.2014.03.091.

 

  1. Jean-Christophe Dornstetter, Junkang, Bastien Bruneau, Erik V. Johnson and Pere Roca i Cabarrocas : “Material and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures". Can. J. Phys. 92 (2014) 740-743. dx.doi.org/10.1139/cjp-2013-0606.

 

  1. Wanghua Chen, Linwei Yu, Soumyadeep Misra, Zheng Fan, Philippe Pareige, Gilles Patriarche, Sophie Bouchoule, and Pere Roca i Cabarrocas: “Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth”. Nature Communications 5 (2014) 4134. DOI: 10.1038/ncomms5134.

 

  1. Jean-Christophe Dornstetter, Bastien Bruneau, Pavel Bulkin, Erik V. Johnson, and Pere Roca i Cabarrocas : "Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures”. The Journal of Chemical Physics 140, 234706 (2014). http://dx.doi.org/10.1063/1.4883503

 

  1. S.N. Abolmasov, H.Woo, R. Planques, J. Holovsk´y, E.V. Johnson, A. Purkrt, and P. Roca i Cabarrocas: “Substrate and p-layer effects on polymorphous silicon solar cells”. EPJ Photovoltaics 5 (2014) 55206. DOI: 10.1051/epjpv/2014007

 

  1. Romain Cariou, Rosa Ruggeri, Tan Xi, Giovanni Mannino, Joaquim Nassar and Pere Roca i Cabarrocas : " Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates”. AIP Advances 4 (2014) 077103. 10.1063/1.4886774. http://dx.doi.org/10.1063/1.4886774.

 

  1. Aomar Hadjadj, Fadila Larbi, Mickaël Gilliot, and Pere Roca i Cabarrocas: “Etching of a-Si:H thin films by hydrogen plasma: a view from in situ spectroscopic ellipsometry”. Journal of Chemical Physics 141(2014) 084708. http://dx.doi.org/10.1063/1.4893558.

 

  1. A. S. Togonal, Lining He, Pere Roca i Cabarrocas, and Rusli: “Effect of Wettability on the Agglomeration of Silicon Nanowire Arrays Fabricated by Metal-Assisted Chemical Etching”. Langmuir  (2014) . dx.doi.org/10.1021/la501768f.

 

  1. Soumyadeep Misra, Linwei Yu, Wanghua Chen, Martin Foldyna and Pere Roca i Cabarrocas: “A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells”. J. Phys. D: Appl. Phys. 47 (2014) 393001. doi:10.1088/0022-3727/47/39/393001

 

  1. C. Charpentier, R. Boukhicha, P. Prod'homme, T. Emeraud, J.-F. Lerat, P. Roca i Cabarrocas, and E.V. Johnson:  “Evolution in Morphological, Optical, and Electronic Properties of ZnO:Al Thin Films Undergoing a Laser Annealing and Etching Process"  Solar Energy Materials and Solar Cells 125 (2014) 223. http://dx.doi.org/10.1016/j.solmat.2014.02.027.

 

  1. Barbara Brudieu, A. Le Bris, J. Teisseire, F. Guillemot, G. Dantelle, S. Misra, P. Roca i Cabarrocas, F. Sorin, T. Gacoin : " Sol-gel route toward efficient and robust Distributed Bragg Reflector for light management applications”. Advanced Optical Materials (2014). http://dx.doi.org/10.1002/adom.201400292

 

  1. Linwei Yu, Mingkun Xu,  Jie Xu, Zhaoguo Xue, Zheng Fan, Gennaro Picardi, Franck Fortuna, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates”. Nano Letters 14 (2014)6469-6474. dx.doi.org/10.1021/nl503001g.

 

  1. Z. Mrázková, A. Torres-Rios, R. Ruggeri, M. Foldyna, K. Postava, J. Pištora, P. Roca i Cabarrocas: “In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe–Ni alloy substrate for photovoltaic applications”. Thin Solid Films 571 (2014) 749–755. http://dx.doi.org/10.1016/j.tsf.2014.06.009.

 

  1. Bastien Bruneau, Romain Cariou, Jean-Christophe Dornstetter, Michael Lepecq, Jean-Luc Maurice, Pere Roca i Cabarrocas, and Erik Johnson: “Ion Energy Threshold in Low Temperature Silicon Epitaxy for Thin Film Crystalline Photovoltaics”. IEEE Journal of Photovoltaics 4 (2014) 1361.

 

  1. C. Trompoukis, I. Abdo, R. Cariou, W. Chen, O. Deparis, V. Depauw, V. Dmitriev, E. Drouard, O. El Daif, M. Foldyna, E. Garcia-Caurel, B. Heidari, A. Herman, L. Lalouat, K. D. Lee, J. Liu, K. Lodewijks, F. Mandorlo, I. Massiot, A. Mayer, V. Mijkovic, J. Muller, R. Orobtchouk, G. Poulain, P. Prod’Homme, P. Roca i Cabarrocas, C. Seassal, I. Gordon, R. Mertens, J. Poortmans: “Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells”. Phys. Status Solidi A, 212 (2015) pp. 140-155.  DOI 10.1002/pssa.201431180.

 

  1. Antonín Fejfar, Matěj Hývl, AliakseiVetushka, Peter Pikna, Zdeňka Hájková, Martin Ledinský, Jan Kočka, Petr Klapetek, Aleš Marek, Andrea Maškvá, Jiří Vyskočil, Janis Merkel, Christiane Becker, Takashi Itoh, Soumyadeep Misra, Martin Foldyna, Linwei Yu, PereRoca i Cabarrocas: “Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers”. Solar Energy Materials and Solar Cells 135 (2015) 106-112. http://dx.doi.org/10.1016/j.solmat.2014.10.027

 

  1. R. Cariou, J. Tang, N. Ramay, R. Ruggeri, and P. Roca i Cabarrocas:  “Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells”. Solar Energy Materials and Solar Cells 134 (2015) 15-21.  http://dx.doi.org/10.1016/j.solmat.2014.11.018.

 

  1. S.N. Abolmasov and P. Roca i Cabarrocas: “In situ photoluminescence system for studying surface passivation in silicon heterojunction solar cells”. J. Vac. Sci. Technol. A 33 (2015) 021201. http://dx.doi.org/10.1116/1.4902014

 

  1. Zhongwei Yu, Shengyi Qian, Linwei Yu, Soumyadeep Misra, Pei Zhang, Junzhuan Wang, Yi Shi, Ling Xu, Jun Xu, Kunji Chen, and Pere Roca i Cabarrocas: “Boosting light emission from Si-based thin film over Si and SiO2 nanowires architecture”. Optics Express 23 (2015). DOI:10.1364/OE.23.005388.

 

  1. Mingkun Xu, Zhaoguo Xue, Linwei Yu, Shengyi Qian, Zheng Fan, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “Operating principles of in-plane silicon nanowires at simple step-edges”. Nanoscale (2015). DOI: 10.1039/C4NR06531J

 

  1. I. Cosme, R.Cariou, W.Chen, M.Foldyna, R.Boukhicha, P. Roca i Cabarrocas, K.D. Lee , C.Trompoukis, V.Depauw: “Lifetime  assessment in crystalline silicon: From na nopatterned wafer to ultra-thin crystalline films for solar cells”. Solar Energy Materials and Solar Cells 135 (2015) 93. http://dx.doi.org/10.1016/j.solmat.2014.10.019.

 

  1. A. Defresne, O. Plantevin, I.P. Sobkowicz, J. Bourçois, P. Roca i Cabarrocas: “Interface defects in a-Si:H/c-Si heterojunction solar cells”. Nuclear Instruments and Methods in Physics Research B (2015). DOI 10.1016/j.nimb.2015.04.009

 

  1. S. Misra, L. Yu, M. Foldyna, P. Roca i Cabarrocas: ‘New approaches to improve the performance of radial junction thin film solar cells built over silicon nanowire arrays’, IEEE JPV, 5 (2015), 40. DOI 10.1109/JPHOTOV.2014.2366688

 

  1. Martin Müller, Matěj Hývl, Markus Kratzer, Christian Teichert, Soumyadeep Misra, Martin Foldyna, Linwei Yu, Pere Roca i Cabarrocas, Takashi Itoh, Zdeňka Hájková, Aliaksei Vetushka, Martin Ledinský, Jan Kočka, and Antonín Fejfar: “Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy”. Japanese Journal of Applied Physics 54, 08KA08 (2015). http://dx.doi.org/10.7567/JJAP.54.08KA08.

 

  1. Shengyi Qian, Soumyadeep Misra, Jiawen Lu, Zhongwei Yu, Linwei Yu, Jun Xu, Junzhuan Wang, Ling Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Full potential of radial junction Si thin film solar cells with advanced junction materials and design”. Appl. Phys. Lett. 107 (2015) 043902. http://dx.doi.org/10.1063/1.4926991.

 

  1. Jiawen Lu, Shengyi Qian, Zhongwei Yu, Soumyadeep Misra, Linwei Yu, Jun Xu, Yi Shi, Pere Roca i Cabarrocas, and Kunji Chen : “How tilting and cavity-mode-resonant absorption contribute to light harvesting in 3D radial junction solar cells”. Optics Express 23 (2015) AA1288.  DOI:10.1364/OE.23.0A1288 | OPTICS EXPRESS A1288

 

  1. Wanghua Chen, Philippe Pareige, Celia Castro, Tao Xu, Bruno Grandidier, Didier Stiévenard and Pere Roca i Cabarrocas : "Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires”. J. Appl. Phys. 118 (2015) 104301. http://dx.doi.org/10.1063/1.4930143

 

  1. Zhongwei Yu, Jiawen Lu, Shengyi Qian, Soumyadeep Misra, Linwei Yu, Jun Xu, Ling Xu, Junzhuan Wang, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells”. Appl. Phys. Lett. 107 (2015) 163105, http://dx.doi.org/10.1063/1.4933274

 

  1. Dennis Lange, Pere Roca i Cabarrocas, Nick Triantafyllidis, and Dmitri Daineka : “Piezoresistivity of thin film semiconductors with application to thin film silicon solar cells”. Solar Energy Materials and Solar Cells 145 (2015) pp 93-103. http://dx.doi.org/10.1016/j.solmat.2015.09.014.

 

  1. D. Murias, M. Moreno, C. Reyes-Betanzo, A. Torres, R. Ambrosio, P. Rosales, J. Martinez, I. Vivaldo, and P. Roca i Cabarrocas: “ Plasma-Texturing Processes and a-Si:H Surface Passivation on c-Si Wafers for Photovoltaic Applications”. Journal of Solar Energy Engineering, American Society of Mechanical Engineers, 137 (2015) 051010. DOI: 10.1115/1.4031105.

 

  1. R. Lachaume, R. Cariou, J. Decobert, M. Foldyna, G. Hamon, P. Roca i Cabarrocas, J. Alvarez, and J.-P. Kleider : "Performance analysis of AlGaAs/epi-Si(Ge) tandem solar cells: a simulation study”. Energy Procedia 84 (2015) pp. 41-46. doi: 10.1016/j.egypro.2015.12.293.

 

  1. Leon Hamui, B. Marel Monroy, Ka-Hyun Kim, Alejandra Lopez, Jaime Santoyo, PhD.; Maximo Lopez, Pere Roca i Cabarrocas, and Guillermo Santana Rodriguez: “Effect of Deposition Temperature on Polymorphous Silicon Thin Films by PECVD: Role of Hydrogen”. Materials Science in Semiconductor Processing 41 (2016)390–397. http://dx.doi.org/10.1016/j.mssp.2015.10.005.

 

  1. Aliénor Svietlana Togonal, Martin Foldyna, Wanghua Chen, Jian Xiong Wang, Vladimir Neplokh, Maria Tchernycheva, Joaquim Nassar, Pere Roca i Cabarrocas, and Rusli: “Core-Shell Heterojunction solar cells based on disordered silicon nanowire arrays”. The Journal of Physical Chemistry C (2016). DOI: 10.1021/acs.jpcc.5b09618.

 

  1. S. Abolmasov, P. Roca i Cabarrocas and P. Chatterjee: “Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions”. EPJ. Photovoltaics 7 (2016) 70302. DOI: 10.1051/epjpv/2015011.

 

  1. Prabal Goyal, Junegie Hong, Farah Haddad, Jean-Luc Maurice, Pere Roca i Cabarrocas, and Erik Johnson: “Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers”.  EPJ Photovoltaics 7 (2016) 70301. DOI: 10.1051/epjpv/2015010.

 

  1. Paul Narchi, Jose Alvarez, Pascal Chrétien, Gennaro Picardi, Romain Cariou, Martin Foldyna, Patricia Prod’homme, Jean-Paul Kleider, Pere Roca i Cabarrocas: “ Cross-sectional investigations on epitaxial silicon solar cells by Kelvin and Conducting Probe Atomic Fore Microscopy: Effect of illumination”. Nanoscale Research Letters (2016) DOI 10.1186/s11671-016-1268-1.

 

  1. Romain Cariou, Wanghua Chen, Ismael Cosme-Bolanos, Jean-Luc Maurice, Martin Foldyna, Valerie Depauw, Gilles Patriarche, Alexandre Gaucher, Andrea Cattoni, Ines Massiot, Stéphane Collin, Emmanuel Cadel, Philippe Pareige and Pere Roca i Cabarrocas : “Ultra-thin PECVD epitaxial Si solar cells on glass via low temperature transfer process”. Progress in Photovoltaics: Research and Applications 24 (2016) pp/ 1075-1084. DOI: 10.1002/pip.2762.

 

  1. Wanghua Chen, Romain Cariou, Martin Foldyna, Valerie Depauw, Christos Trompoukis, Emmanuel Drouard, Loic Lalouat, Abdelmounaim Harouri, Jia Liu, Alain Fave, Régis Orobtchouk, Fabien Mandorlo, Christian Seassal, Inès Massiot, Alexandre Dmitriev, Ki-Dong Lee and Pere Roca i Cabarrocas:  “Nanophotonics-based low temperature PECVD epitaxial crystalline silicon solar cells”. J. Phys. D: Appl. Phys. 49 (2016) 125603. doi:10.1088/0022-3727/49/12/125603. Selected by the Editorial Board of Journal of Physics D: Applied Physics for inclusion in the exclusive ‘Highlights of 2016’ collection.

 

  1. F. Lebreton, S.N. Abolmasov, F. Silva, and P. Roca i Cabarrocas: “In situ PL study of plasma-induced damage at the a-Si:H/c-Si interface”. Appl. Phys. Lett. 108 (2016) 051603. doi: 10.1063/1.4941298.

 

  1. Wanghua Chen, Martin Foldyna, Gilles Poulain, and Pere Roca i Cabarrocas : “Excellent surface passivation and light trapping of crystalline Si via low temperature Si nanowire growth”. IEEE. J. of Photovoltaics 6 (2016) pp 823-829. DOI 10.1109/JPHOTOV.2016.2547585

 

  1. Zhaoguo Xue, Mingkun Xu, Xing Li, Jimmy Wang, Xiaofan Jiang, Xianlong Wei, Linwei Yu, Qing Chen, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “In-plane self-turning and twin dynamics renders large stretchability to mono-like zigzag silicon nanowire springs”. Advanced Functional Materials 26 (2016) pp. 5352-5359. DOI: 10.1002/ adfm.201600780.

 

  1. D. Murias, M. Moreno, C. Reyes-Betanzo, A. Torres, P. Rosales, J. Martínez, R. Ambrosio, P. Roca i Cabarrocas: “Effect Of The Substrate Temperature On The Plasma Texturing Process Of c-si Wafers For Black Silicon Solar Cells”. Phys. Status Solidi A (2016) . DOI 10.1002/pssa.201532954.

 

  1. Romain Cariou, Wanghua Chen, Jean-Luc Maurice, Jingwen Yu, Gilles Patriarche, Olivia Mauguin, Ludovic Largeau, Jean Decobert, and Pere Roca i Cabarrocas : "Low temperature PECVD epitaxial growth of silicon on GaAs : A new paradigm for III-V/Si integration". Scientific Reports 6 (2016) 25674. DOI: 10.1038/srep25674.

 

  1. W. Chen, Ph. Pareige, and P. Roca i Cabarrocas: “Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells". Appl. Phys. Lett.  108, (2016) 253110. doi: 10.1063/1.4954707.

 

  1. Olivier Plantevin, Alice Defresne and Pere Roca i Cabarrocas: “Suppression of the thermal quenching of photoluminescence in irradiated silicon heterojunction solar cells”. Physica Status Solidi A 7 (2016) 1964–1968. http://dx.doi.org/10.1002/pssa.201532997s.

 

  1. Wanghua Chen, Valerie Depauw, Farah Haddad, Jean-Luc Maurice and Pere Roca i Cabarrocas : “Influence of anodic bonding on the surface passivation quality of crystalline silicon”. Solar Energy Materials and Solar Cells 157 (2016)154–160. http://dx.doi.org/10.1016/j.solmat.2016.05.031.

 

  1. Ka-Hyun Kim, Erik V. Johnson, and Pere Roca i Cabarrocas: “Light-induced changes in hydrogenated polymorphous silicon solar cells: modification of silicon-hydrogen bonding on silicon nanocrystal surface under illumination”. Jpn. J. Appl. Phys. 55, (2016) 072302. http://doi.org/10.7567/JJAP.55.072302.

 

  1. Tatiana Novikova, Bernard Drévillon, Laurent Schwartz, Pierre Validire, André Nazac, Razvigor Ossikovski, Enric Garcia-Caurel, Blandine Laude-Boulesteix, Makrina Anastasiadou, Maria Losurdo, Kurt Hinderl, Bicher Haj Ibrahim, Maria-Rosaria Antonelli, Angelo Pierangelo, Stanislas Deby, Stéphane Roussel, Sandeep Manhas, Jérémy Vizet, Dominique Pagnoux, Stéphane Bancelin, Marie-Claire Schanne-Klein, Jean Rehbinder, Huda Haddad, François Moreau, Jean-Charles Vanel, Pere Roca i Cabarrocas, Valery Tuchin, and Steven Jacques. Journal of Biomedical Optics 21 (2016) 071101. doi: 10.1117/1.JBO.21.7.071101.

 

  1. Wanghua Chen and Pere Roca i Cabarrocas: “Insights into gold-catalyzed plasma-assisted CVD growth of silicon nanowires”. Appl. Phys. Lett. 109 (2016), 043108. http://dx.doi.org/10.1063/1.4960106.

 

  1. Zhaoguo Xue, Mingkun Xu, Yaolong Zhao, Jimmy Wang, Xiaofan Jiang, Linwei Yu, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation”.  Nature Communications 7 (2016) 12836. | DOI: 10.1038/ncomms12836.

 

  1. Alexandre Gaucher, Andrea Cattoni, Christophe Dupuis, Wanghua Chen, Romain Cariou, Martin Foldyna, Loic Lalouat, Emmanuel Drouard, Christian Seassal, Pere Roca i Cabarrocas, and Stéphane Collin: “Ultrathin epitaxial silicon solar cells with inverted nanopyramid arrays for efficient light trapping”. NanoLetters 16 (2016) pp 5358–5364. 10.1021/acs.nanolett.6b01240.

 

  1. Paul Narchi, Romain Cariou, Martin Foldyna, Patricia Prod’homme and Pere Roca i Cabarrocas: “Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin Probe Force Microscopy”. IEEE Journal of Photovoltaics  6 (2016) pp. 1576–1580. DOI: 10.1109/JPHOTOV.2016.2598258

 

  1. T. Kohut, K. Postava, Z. Mrazkova, M. Foldyna, P. Roca i Cabarrocas, M. Micica1, and J. Pištora: “Modeling of Mueller Matrix Response from Diffracting Structures”. J. of NanoScience and Nanotechology 16 (2016) pp. 7805-7809. doi:10.1166/jnn.2016.12553

 

  1. Jian Tang, Wanghua Chen, Jean-Luc Maurice, Soumyadeep Misra, Martin Foldyna, Erik Johnson and Pere Roca i Cabarrocas: “Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation”. Nanoscale Research Letters (2016) DOI 10.1186/s11671-016-1681-5.

 

  1. Farah Haddad, Prabal Goyal, Erik V. Johnson, Junegie Hong, Pere Roca i Cabarrocas and Jean-Luc Maurice: “Quasi-fivefold symmetric electron diffraction patterns due to multiple twinning in silicon thin films grown from hexamethyldisiloxane”. Journal of Applied Crystallography 49 (2016) 2226. https://doi.org/10.1107/S1600576716016848.

 

  1. M. Foldyna, Alienor Svietlana Togonal, Rusli, and Pere Roca i Cabarrocas: “Optimization and optical characterization of vertical nanowire arrays for core-shell structure solar cells”. Solar Energy Materials and Solar Cells 159 (2016) pp 640-648. http://dx.doi.org/10.1016/j.solmat.2016.06.014.  

 

  1. Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, Pere Roca i Cabarrocas, Jean-Paul Kleider, Fei Yao, and Young Hee Lee: “Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures”. J.  Phys.: Condensed Matter. 28 (2016) 404001. doi:10.1088/0953-8984/28/40/404001.

 

  1. Mingkun Xu, Zhaoguo Xue, Jimmy Wang,Yaolong Zhao,Yao Duan, Guangyao Zhu, Linwei Yu, Jun Xu, Junzhuan Wang, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Hetero-epitaxial writing of silicon-on-sapphire nanowires”. NanoLetters 16 (2016) pp 7317–7324. doi/abs/10.1021/acs.nanolett.6b02004.

 

  1. Prabal Goyal, Elias Urrejola, Junegie Hong, Julien Voillot, Pere Roca i Cabarrocas, and Erik Johnson: “Analysis of p-type SiOx layers as a boron diffusion source for n-type c-Si substrates”. Physica Status Solidi A 213 (2016) pp. 1760–1766. DOI 10.1002/pssa.201532912.

 

  1. Alice Defresne, Olivier Plantevin and Pere Roca i Cabarrocas: “Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation”. AIP Advances 6 (2016) 125107; doi: 10.1063/1.4971276.

 

  1. R. Lachaume1, M. Foldyna2, G. Hamon2,3, J. Decobert4, R. Cariou2,4, P. Roca i Cabarrocas2, J. Alvarez1 and J.-P. Kleider : "Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes”. Solar Energy Materials and Solar Cells 166 (2017) 276-285. http://dx.doi.org/10.1016/j.solmat.2016.11.023

 

  1. Paul Narchi, Vladimir Neplokh, Valerio Piazza, Twan Bearda, Fabien Bayle, Martin Foldyna, Chiara Toccafondi, Patricia Prod’homme, Maria Tchernycheva, and Pere Roca i Cabarrocas : “Surface potential investigation on interdigitated back contact solar cells by scanning electron microscopy and Kelvin probe force microscopy: effect of electrical bias”. Solar Energy Materials and Solar Cells”. Solar Energy Materials and Solar Cells 161 (2017) pp 263-269.

 

  1. Ka-Hyun Kim, Erik V. Johnson, and Pere Roca i Cabarrocas: “Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism”. Solar Energy 143 (2017) pp 86-92. http://dx.doi.org/10.1016/j.solener.2016.12.030.

 

  1. Ka-Hyun Kim, Erik V. Johnson, Andrei Kazanskii, Mark V. Khenkin, and Pere Roca i Cabarrocas: “Synthesis of silicon nanocrystals in silane plasma and their contribution to growth of polymorphous silicon thin films”. Sci. Reports 7 (2017) 40553. DOI: 10.1038/srep40553.

 

  1. Ronan Léal, Farah Haddad, Gilles Poulain, Jean-Luc Maurice, and Pere Roca i Cabarrocas : “High quality boron doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells”. AIP Advances 7, 025006 (2017); doi: 10.1063/1.4976685.

 

  1. W. Chen, Romain Cariou, Gwenaëlle Hamon, Ronan Léal, Jean-Luc Maurice, and Pere Roca i Cabarrocas : “Influence of deposition rate on the properties of plasma-enhanced CVD epitaxial silicon”. Sci Reports 7 (2017) 43968. DOI: 10.1038/srep43968.

 

  1. Ka-Hyun Kim, Erik V. Johnson, and Pere Roca i Cabarrocas: “Evolution of microstructure and incorporation of excess hydrogen during the growth of hydrogenated polymorphous silicon at high rate”. Journal of NanoScience and Nanotechnology 17 (2017) pp. 4920-4925. doi:10.1166/jnn.2017.14281.

 

  1. Mingkun Xu, Jimmy Wang, Zhaoguo Xue, Junzhuan Wang, Ping Feng, Linwei Yu, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics”. NanoScale 9 (2017) 10350-10357. DOI: 10.1039/C7NR02825C.

 

  1. Valérie Depauw, Christos Trompoukis, Ines Massiot, Wanghua Chen,
    Alexandre Dmitriev, Pere Roca i Cabarrocas, Ivan Gordon, Jef Poortmans : “Sunlight-thin nanophotonic monocrystalline silicon solar cells”. Nano Futures 1 (2017) 021001. https://doi.org/10.1088/2399-1984/aa7d7c. Highlighted in the Inaugural highlights issue of Nano Futures, Feb 2018.

 

  1. Z. Mrazkova, M. Foldyna, S. Misra, M. Al-Ghzaiwat, K. Postava, J. Pištora, and P. Roca i Cabarrocas: “In-situ Mueller matrix ellipsometry of silicon nanowires grown by plasma enhanced vapor-liquid-solid method for radial junction solar cells”. Appl. Surf. Sci 421 (2017) 667. http://dx.doi.org/10.1016/j.apsusc.2016.12.199.

 

  1. Gwenaëlle Hamon, Nicolas Vaissiere, Romain Cariou, Raphaël Lachaume, José Alvarez, Wanghua Chen, Jean Paul Kleider, Jean Decobert, and Pere Roca i Cabarrocas : "Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells”. J. Photon. Energy 7(2), 022504 (2017), doi: 10.1117/1.JPE.7.022504.

 

  1. Stephen J. Fonash, Wook Jun Nam, Jean-Christophe Dornstetter, Mutaz Al-Ghzaiwat, Martin Foldyna, and Pere Roca i Cabarrocas: "A Solar Cell Architecture for Enhancing Performance while Reducing Absorber Thickness, and Back Contact Optical Losses". IEEE J. of Photovoltaics 7 (2017) 2156 . doi.10.1109/JPHOTOV.2017.2703854

 

  1. Jian Tang, J.-L. Maurice, F. Fossard, I. Florea, W. Chen, E.V. Johnson, M. Foldyna, L. Yu and P. Roca i Cabarrocas: “Natural occurrence of the diamond hexagonal structure in silicon nanowires grown by plasma assisted vapour-liquid-solid method”. Nanoscale 9 (2017) 8113. DOI: 10.1039/c7nr01299c.

 

  1. Itaru Raifuku, Yasuaki Ishikawa, Tiphaine Bourgeteau, Yvan Bonnassieux, Pere Roca i Cabarrocas, and Yukiharu Uraoka: “Fabrication of perovskite solar cells using sputter-processed CH3NH3PbI3 films”. Applied Physics Express 10, 094101 (2017). https://doi.org/10.7567/APEX.10.094101.

 

 

  1. Fabien Lebreton, Raphaël Lachaume, Pavel Bulkin, François Silva, Sergej A. Filonovich, Erik V. Johnson, Pere Roca i Cabarrocas : " Deleterious electrostatic interaction in silicon passivation stack between thin ALD Al2O3 and its a‑SiNX:H capping layer: numerical and experimental evidences”. Energy Procedia 124 (2017) pp 91-98.

 

  1. Wanghua Chen, Gwenaelle Hamon, Ronan Leal, Jean-Luc Maurice, Ludovic Largeau, and Pere Roca i Cabarrocas: “Growth of tetragonal Si via plasma-enhanced epitaxy”. Crystal Growth and Design 201717 (8), pp 4265–4269.DOI: 10.1021/acs.cgd.7b00601.

 

  1. Fan Yang, Junzhuan Wang, Jiawen Lu, Zhongwei Yu, Linwei Yu, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “Biomimetic Radial Tandem Junction Photodetector with Natural RGB Color Discrimination Capability”. Advanced Optical Materials 5 (2017) 1700390. DOI: 10.1002/adom.201700390. Cover page of the journal http://onlinelibrary.wiley.com/doi/10.1002/adom.v5.19/issuetoc

 

  1. Zheng Fan, Jean-Luc Maurice, Wanghua Chen, Stéphane Guilet, Edmond Cambril, Xavier Lafosse, Laurent Couraud, Kamel Merghem, Linwei Yu, Sophie Bouchoule, Pere Roca i Cabarrocas": Hydrogen plasma exposure of In/ITO bilayers as an effective way for tailoring In nanoparticles size distribution”. Langmuir 33 (2017) pp 12114–12119   DOI: 10.1021/acs.langmuir.7b01743.

 

  1. Zhaoguo Xue, Mei Sun, Taige Dong, Zhiqiang Tang, Yaolong Zhao, Junzhuan Wang, Xianlong Wei, Linwei Yu, Qing Chen, Jun Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics”. NanoLetters 17 (2017)  pp 7638–7646 DOI: 10.1021/acs.nanolett.7b03658.

 

  1. N. Puspitosari, Christophe Longeaud, Raphaël Lachaume, Li Zeyu, Rusli, and Pere Roca i Cabarrocas  : “Comparison of FTPS performed on thin films and solar cells”.  Physica Status Solidi C: Current Topics in Solid State Physics 14 (2017) 1700165. DOI: 10.1002/pssc.201700165.

 

  1. Zhang Song, Tiphaine Bourgeteau, Raifuku Itaru, Yvan Bonnassieux, Erik Johnson, Yasuaki Ishikawa, Martin Foldyna, Pere Roca i Cabarrocas, Yukiharu Uraoka : “Structural study of NiOx thin films fabricated by radio frequency sputtering at low temperature. Thin Solid Films 646 (2018) 2009-2015, doi:10.1016/ j.tsf.2017.12.003.

 

  1. Jean-Maxime Orlac’h, Vincent Giovangigli, Tatiana Novikova, and Pere Roca i Cabarrocas : "Kinetic theory of two-temperature polyatomic plasmas”. Physica A: Statistical Mechanics and its Applications. 494 (2018) pp. 503 - 546. DOI 10.1016/j.physa.2017.11.151

 

  1. Parsathi Chatterjee and Pere Roca i Cabarrocas: “Role of N-type μc-SiOx:H as intermediate reflector in "micromorph" tandem solar cells”. AIP Advances 8 (2018) 015115. https://doi.org/10.1063/1.5005114.

 

  1. Mutaz Al-Ghzaiwat, Martin Foldyna, Takashi Fuyuki, Wanghua Chen, Erik V. Johnson, Jacques Meot, and Pere Roca i Cabarrocas: “Large Area Radial Junction Silicon Nanowire Solar Mini-Modules”. Sci. Reports (2018). DOI:10.1038/s41598-018-20126-5.

 

  1. Pablo A. Fernández Garrillo, Paul Narchi,  Pere Roca i Cabarrocas, Benjamin Grévin, and Łukasz Borowik: “Comments on Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy”. IEEE Journal of Photovoltaics 8 (2018) 661. DOI: 10.1109/JPHOTOV.2018.2793760.

 

  1. Zuzana Mrazkova, Igor Paul Sobkowicz, Martin Foldyna, Kamil Postava, Ileana Florea, Jaromír Pištora and Pere Roca i Cabarrocas : " Optical properties and performance of pyramidal texture silicon heterojunction solar cells: Key role of vertex angles”. Progress in Photovoltaics Research and Applications (2018). DOI: 10.1002/pip.2994

 

  1. R. Jiménez, M. Moreno, A. Torres, P. Rosales, V. Gomez, N. Carlos, P. Roca i Cabarrocas: “Effect of pressure and flow rates on polymorphous silicon-germanium (pm-SixGe1-x:H) thin films for infrared detection applications”. Phys. Status Solidi A 2018, 1700735. DOI: 10.1002/pssa.201700735.

 

  1.  Zeyu Li, Rusli, Martin Foldyna, Junkang Wang, Wanghua Chen, Ari Bimo Prakoso, Chenjin Lu, and Pere Roca i Cabarrocas: “Nanostructured Back Reflectors produced using Polystyrene Assisted Lithography for Enhanced Light Trapping in Silicon Thin Film Solar Cells”. Solar Energy 167 (2018) pp 108-115.

 

  1. Lukas Halagacka, Martin Foldyna, Ronan Léal and Pere Roca i Cabarrocas: “In-situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth”. Photonics and Nanostructures - Fundamentals and Applications 30 (2018) pp. 73-77. https://doi.org/10.1016/j.photonics.2018.04.011.

 

  1. Wanghua Chen, Jean-Luc Maurice, Jean-Charles Vanel and Pere Roca i Cabarrocas : "Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature”. J. Phys. D: Appl. Phys.   51 (2018) 235203.   https://doi.org/10.1088/1361-6463/aac1ea

 

  1. Li Zeyu, Rusli E, Chenjin Lu, Ari Bimo Prakoso, Martin Foldyna, Rasha Khoury, Pavel Bulkin, Junkang Wang, Wanghua Chen, Erik Johnson, and Pere Roca i Cabarrocas:  “Optical study and experimental realization of nanostructured back reflectors with reduced parasitic losses for silicon thin film solar cells”. NanoMaterials 8 (2018) 626. Special Issue Design and Development of Nanostructured Thin Films.

 

  1. Letian Dai,  Isabelle Maurin, Martin Foldyna, José Alvarez, Weixi Wang, Hamza Mohsin, Wanghua Chen,  Jean-Paul Kleider,  Jean-Luc Maurice, Thierry Gacoin and Pere Roca i Cabarrocas : "Tin dioxide nanoparticles as catalyst precursors for plasma-assisted vapor-liquid-solid growth of silicon nanowires with well-controlled density”. Nanotechnology 29 (2018) 435301. https://doi.org/10.1088/1361-6528/aad7db.

 

  1. Xiaolin Sun, Ting Zhang, Fan Yang, Junzhuan Wang, Linwei Yu, Ling Xu, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “Firmly standing 3D radial junctions on soft aluminum foils enable extremely low cost flexible thin film solar cells with very high power-to-weight performance”. Nano Energy 53 (2018) pp. 83-90. https://doi.org/10.1016/j.nanoen.2018.08.038.

 

  1. Mutaz Al-Ghzaiwat, Antonino Foti, André Nuesslein, Lukáš Halagačka, Jacques Meot, Anne Labouret, Razvigor Ossikovski, Pere Roca i Cabarrocas, and Martin Foldyna: “Towards efficient radial junction silicon nanowire-based solar mini-modules”. Physica      Status Solidi Rapid Research Letters (2018) 1800402. DOI: 10.1002/pssr.201800402.

 

  1. Edy Azrak, Wanghua Chen, Simona Moldovan, Shiwen Gao, Sébastien Duguay, Philippe Pareige and Pere Roca i Cabarrocas: “Growth of In-Plane Ge1-xSnx nanowires with 22 at.% Sn using solid-liquid-solid mechanism”. The Journal of Physical Chemistry C 122 (2018), 26236−26242. DOI: 10.1021/acs.jpcc.8b07142.

 

  1. Yaolong1       A.M. Antoine, B. Drévillon, and P. Roca i Cabarrocas: "Growth processes of RF glow discharge deposited a-Ge:H films". J. of Non Cryst. Solids 77&78 (1985) 769.

     

    2       A.M. Antoine, B. Drévillon, and P. Roca i Cabarrocas: "In-situ investigation of the growth of RF glow discharge deposited amorphous germanium and silicon films". J. of Appl. Phys. 61 (1987) 2501.

     

    3       I. Chambouleyron, A. Lloret, P. Roca i Cabarrocas, Journal of G. Sardin, and J. Andreu: "Hydrogen content, transport properties, and light degradation of a-Si:H films containing artificially generated interfaces". Solar Energy Materials 17 (1988) 1.

     

    4       P. Roca i Cabarrocas, L. Chahed, B. Drévillon, and M.L. Thèye: "Light induced effects on the optical absorption of a-Si:H". J. of Non Cryst. Solids 104 (1988) 59.

     

    5       J. Perrin, P. Roca i Cabarrocas, B. Allain, and J.M. Friedt: "a-Si:H deposition from SiH4 and Si2H6 RF discharges: pressure and temperature dependence of film growth in relation to the a-g discharge transition". Jpn. J. of Appl. Phys. 27 (1988) 2041.

     

    6       B. Drévillon, S. Kumar, P. Roca i Cabarrocas, and J.M. Siefert : "In-situ investigation of the opto-electronic properties of transparent conducting oxide/amorphous silicon interfaces". Appl. Phys. Lett. 54 (1989) 2088.

     

    7       P. Roca i Cabarrocas, S. Kumar, and B. Drévillon: "In situ study of the thermal decomposition of B2H6 by combining spectroscopic ellipsometry and Kelvin probe measurements". J. Appl. Phys. 66 (1989) 3286.

     

    1. P. Roca i Cabarrocas, J.Z. Liu, H.R. Park, A. Maruyama, and S. Wagner: "Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge". J of Non Cryst. Solids 114, 190 (1989).

     

    9       N. Hata, S. Wagner, P. Roca i Cabarrocas, and M. Favre: "Deposition-induced defect profiles in amorphous hydrogenated silicon". Appl. Phys. Lett. 56 (1990) 2448.

     

    10     H. R. Park, J. Z. Liu, P. Roca i Cabarrocas, A. Maruyama, M. Isomura, S. Wagner, J. R. Abelson, and F. Finger: "Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon". Appl. Phys. Lett. 57 (1990) 1440.

     

    11     M.L. Thèye, L. Chahed, P. Roca i Cabarrocas, and K. Zellama: "Studies by photothermal deflection spectroscopy of defect formation in a-Si:H". Phil. Mag. B, Vol. 63, No. 1 (1991) 143.

     

    12     P. Roca i Cabarrocas, P. Morin, V. Chu, J. Conde, J.Z. Liu, H.R. Park, and S. Wagner: "Opto-electronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias". J. Appl. Phys. 69(5) (1991) 2942.

     

    13     P. Roca i Cabarrocas, J.B. Chévrier, J. Huc, A. Lloret, J.Y. Parey, and J.P.M. Schmitt: "A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition". J. of Vac. Sci. and Technol. A9 (1991) 2331.

     

    14     K. Zellama, H. Labidi, P. Germain, D. Lortigues, L. Chahed, M.L. Thèye, P. Roca i Cabarrocas, and C. Godet: "Experimental studies of the light-induced defects in undoped hydrogenated amorphous silicon as a function of deposition conditions". Thin Solid Films, 204 (1991) 385.

     

    15     M. Stchakovsky, B. Drévillon, and P. Roca i Cabarrocas: "In-situ investigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry". J. Appl. Phys. 70 (1991) 2132.

     

    1. P. Vilató, B. Drévillon, S. Kumar, and P. Roca i Cabarrocas: "In-situ investigation of the transparent conducting oxide surface modifications during amorphous silicon growth in a silane plasma". Rivista Sperimentale del Vetro (1991).

     

    1. R. Meaudre, M. Meaudre, P. Roca i Cabarrocas, S. Tanidi, Y. Bouizem, and M.L. Thèye: "Absence of thermal quenching effects in undoped amorphous silicon deposited by PECVD of He-diluted silane". J. of Non Cryst. Solids 137&138 (1991).

     

    1. P. Roca i Cabarrocas, Y. Bouizem, and M.L. Thèye: "Defect density and hydrogen bonding in hydrogenated amorphous silicon as functions of substrate temperature and deposition rate". Phil. Mag. B 65 (1992) 1025.

     

    1. K. Zellama, H. Labidi, P. Germain, H. J. von Bardeleben, L. Chahed, M.L. Thèye, P. Roca i Cabarrocas, C. Godet, and J.P. Stoquert: "Systematic study of light-induced effects in hydrogenated amorphous silicon". Phys. Rev. B45 (1992) 13314.

     

    19     P. Roca i Cabarrocas, Z. Djebbour, J.P. Kleider, C. Longeaud, D. Mencaraglia, J. Sib, Y. Bouizem, M.L. Thèye, G.Sardin, and J.P. Stoquert: "Hydrogen, microstructure and defect density of hydrogenated amorphous silicon". J. Phys. I France 2 (1992) 1979.

     

    20     J.P. Kleider, C. Longeaud, and P. Roca i Cabarrocas: "Experimental evidence for the annealing of surface defects in a-Si:H during deposition". J. Appl. Phys. 72 (1992) 4727.

     

    21     C. Godet, P. Roca i Cabarrocas, S.C. Gujrathi, and P. Burret: "Hydrogen profiling by elastic recoil detection in microcrystalline germanium thin films". J. Vac. Sci. and Technol. A 10 (6) (1992) 3517.

     

    22     V. Yakovlev, B. Drévillon, N. Layadi, and P. Roca i Cabarrocas: "Real time ellipsometry investigation of Pd2Si formation induced by exposure of Palladium to silane". J. Appl. Phys. 74 (1993) 2535.

     

    23     N. Layadi, P. Roca i Cabarrocas, V. Yakovlev, and B. Drévillon: "Effects of UV light on the deposition kinetics and optoelectronic properties of a-Si:H films deposited by RF glow discharge". Appl. Surface Science 69 (1993) 262.

     

    24     Ch. Böhm, J. Perrin, and P. Roca i Cabarrocas: "Ion-induced secondary electron emission in SiH4 glow discharge, and temperature dependence of a-Si:H deposition rate. J. Appl. Phys.73 (1993) 2578.

     

    25     R. Meaudre, M. Meaudre, S. Vignoli, P. Roca i Cabarrocas, Y. Bouizem, and M.L. Thèye: "Stability of hydrogenated amorphous silicon deposited by PECVD from He-diluted silane". Phil. Mag. B 67 (1993) 497.

     

    26     R. Meaudre, M. Meaudre, and P. Roca i Cabarrocas: "Thermal quenching and relaxation in doped hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from He-diluted silane". Appl. Phys. Lett. 62 (1993) 594.

     

    1. N. Layadi, P. Roca i Cabarrocas, V. Yakovlev, and B. Drévillon: "Study by real time ellipsometry of the growth of amorphous and microcrystalline silicon thin films by combining glow discharge decomposition and UV light irradiation". Thin Solid Films, 233 (1993) 281.

     

    1. J.Z. Liu, G. Lewen, J.P. Conde, and P. Roca i Cabarrocas: "Dual-beam photocurrent spectra in undoped a-Si:H: anomalous band, optical transition energy, and correlation energy". J. Non Cryst. Solids 164-166 (1993) 383.

     

    1. S.J. Jones, Y. Chen, D.L. Williamson, U. Kroll, and P. Roca i Cabarrocas: "The effects of Ar and He dilution of silane plasmas on the microstructure of a-Si:H detected by small-angle X-ray Scattering". J. Non Cryst. Solids, 164-166 (1993) 131

     

    1. P. Roca i Cabarrocas: "Towards high deposition rates of a-Si:H, the limiting parameters". J. Non Cryst. Solids, 164-166 (1993) 37

     

    1. H. Shirai, B. Drévillon, N. Layadi, and P. Roca i Cabarrocas: "In situ visible and infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous silicon". J. Non Cryst. Solids, 164-166 (1993) 119.

     

    1. K. Zellama, J.H. von Bardeleben, V. Quillet, Y. Bouizem, P. Sládek, M.L. Thèye, and P. Roca i Cabarrocas: " Experimental study of disorder and defects in undoped a-Si:H as a function of annealing and hydrogen evolution". J. Non Cryst. Solids, 164-166 (1993) 285.

     

    1. S. Vignoli, R. Meaudre, M. Meaudre, L. Chanel, and P. Roca i Cabarrocas: "Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures". J. Non Cryst. Solids, 164-166 (1993) 191.

     

    1. J.P. Kleider, C. Longeaud, and P. Roca i Cabarrocas: "Influence on the transport properties of the deposition temperature of a-Si:H films deposited from mixtures of silane in helium at high deposition rates". J. Non Cryst. Solids, 164-166 (1993) 403.

     

    1. N. Layadi, P. Roca i Cabarrocas, J. Huc, J.Y. Parey, and B. Drévillon: "In-situ excimer laser induced crystallization of hydrogenated amorphous silicon thin films". Solid State Phenomena 37-38 (1994) 281.

     

    1. P. Roca i Cabarrocas and A. Lloret: "Optical and Electronic properties of hydrogenated amorphous silicon films deposited by square wave modulated rf discharges of silane-He mixtures". Applied Physics A 58 (1994) 365.

     

    1. N. Layadi, P. Roca i Cabarrocas, W. Marine, M. Gerri, V. Spousta, J. Perrière: "Excimer laser assisted rf glow discharge deposition of amorphous and microcrystalline thin films". Applied Physics A 58 (1994), 507-512.

     

    1. H.C. Neitzert, N. Layadi, P. Roca i Cabarrocas, and R. Vanderhaghen: "In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium and helium plasmas". Appl. Phys. Lett. 65 (1994) 1260.

     

    1. P. Roca i Cabarrocas: "Deposition of intrinsic, p-type and n-type hydrogenated amorphous silicon films at 50 °C". Appl. Phys. Lett. 65 (1994) 1674.

     

    1. H.C. Neitzert, N. Layadi, P. Roca i Cabarrocas, R.Vanderhaghen, and M. Kunst: "In-situ measurements of changes in the structure and in the excess charge carrier kinetics at the silicon surface during hydrogen and helium plasma exposure". J. Appl. Phys. 78 (1995) 1438.

     

    1. C. Godet, N. Layadi, and P. Roca i Cabarrocas: "Role of mobile hydrogen in the amorphous silicon recrystallization". Appl. Phys. Lett. 66 (1995) 3146.

     

    1. P. Roca i Cabarrocas, N. Layadi, T. Heitz, B. Drévillon, and I. Solomon: "Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences". Appl. Phys. Lett. 66 (1995) 3609.

     

    1. J.P. Kleider, C. Longeaud, M. Barranco-Diaz, P. Morin, and P. Roca i Cabarrocas: "Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates". J. Apl. Phys. 78 (1995) 317.

     

    1. N. Layadi, P. Roca i Cabarrocas, B. Drévillon, and I. Solomon: "Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment". Phys. Rev. B 52 (1995) 5136.

     

    1. J. Dutta, I.M. Reaney, P. Roca i Cabarrocas, and H. Hofmann: "Multilayered silicon/silicon nitride thin films deposited by plasma-CVD: effects of crystallization". NanoStrucutred Materials 6 (1995) 843.

     

    1. R. Darwich, P. Roca i Cabarrocas, S. Vallon, R. Ossikovski, P. Morin, and K. Zellama: "Observation by infrared transmission spectroscopy and infrared ellipsometry of a new hydrogen bond during light-soaking of a-Si:H". Phil Mag B 72, 363 (1995).

     

    1. A. Hadjadj, P. Roca i Cabarrocas, and B. Equer: "Analytical compensation of stray capacitance effect in Kelvin probe measurements". Rev. Sci. Instrum. 66 (1995) 5272.

     

    1. K. Zellama, L. Chahed, P. Sládek, M. L. Thèye, J.H. von Bardeleben, and P. Roca i Cabarrocas: "Hydrogen effusion induced structural changes and defects in a-Si:H films: Dependence upon the film microstructure". Phys. Rev. B 53 (1996) 3804.

     

    1. C. Guedj, J. Boulmer, D. Bouchier, C. Clerc, G. Calvarin, C. Godet, P. Roca i Cabarrocas, F. Houzé, and D. Mencaraglia: "Bulk and surface structural properties of Si1-x-yGexCy layers processed on Si (001) by pulsed laser induced epitaxy". Applied Surface Science, 102 (1996) 28.

     

    1. P. Roca i Cabarrocas, P. Gay, and A. Hadjadj: "Experimental evidence for nanoparticle deposition in continuous argon-silane plasmas: Effects of silicon nanoparticles on film properties". J. Vac. Sci. and Technol. A14 (1996) 655.

     

    1. C. Godet and P. Roca i Cabarrocas: "Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H". J. Appl. Phys. 80 (1996) 97.

     

    1. P. Roca i Cabarrocas, S. Hamma, A. Hadjadj, J. Bertomeu, and J. Andreu: "New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy". Appl. Phys. Lett. 69 (1996) 529.

     

    1. J. Ebothé, P. Roca i Cabarrocas, C. Godet, and B. Equer: "Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process". Mat. Science and Engeneering B42 (1996) 105.

     

    1. M. Cuniot, J. Dixmier, and P. Roca i Cabarrocas: "Improved mobility-lifetime product of holes in a-Si:H n-i-p devices: A consequence of structural relaxation ?" J. Non Cryst. Solids, 198-200 (1996) 540.

     

    1. P. Roca i Cabarrocas, N. Layadi, B. Drévillon, and I. Solomon: "Microcrystalline silicon growth by the layer-by-layer technique: Long-term evolution and nucleation mechanisms". J. Non Cryst. Solids, 198-200, (1996) 871-874.

     

    1. C. Godet, P. Morin, and P. Roca i Cabarrocas: "Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H". J. Non Cryst. Solids, 198-200 (1996) 449.

     

    1. S. Vignoli, R. Meaudre, M. Meaudre, P. Roca i Cabarrocas, C. Godet, and P. Morin: "Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions". J. Non Cryst. Solids, 198-200 (1996) 474.

     

    1. Ch. Bellin, P. Roca i Cabarrocas, K. Zellama, M.L. Thèye, and G. Loupias: "Compton profiles of amorphous and hydrogenated amorphous silicon". Solid State Communications 104 (1997) 193.

     

    1. S. Hamma and P. Roca i Cabarrocas: "In-situ correlation between optical and electrical properties of intrinsic and n-type microcrystalline silicon films". J. Appl. Phys. 81 (1997) 7282.

     

    1. A. Hadjadj, P. Roca i Cabarrocas, and B. Equer: "In-situ Kelvin probe study of boron doping of a-Si:H". Phil. Mag. B 76 (1997) 941.

     

    1. S. Hamma and P. Roca i Cabarrocas: "Long range effects of hydrogen during microcrystalline silicon growth". Thin Solid Films 296 (1997) 11.

     

    1. R. Brenot, R. Vanderhaghen, B. Drévillon, I. French, and P. Roca i Cabarrocas: "Time resolved microwave conductivity measurements for the characterization of transport properties in thin film microcrystalline silicon". Thin Solid Films 296 (1997) 94.

     

    1. G.E.N. Landweer and P. Roca i Cabarrocas: "Photoemission measurements on aluminum and amorphous silicon by pulsed laser illumination in presence of a plasma". Applied Surface Science 109/110 (1997) 579.

     

    1. A. Hadjadj, M. Favre, B. Equer, and P. Roca i Cabarrocas: " In-situ Kelvin Probe and ellipsometry study of the doping of a-Si:H and a-SiC:H layers: Correlation with solar cell parameters". Solar Energy Materials and Solar Cells 51 (1998) 145.

     

    1. A. Hadjadj, P. St'ahel, P. Roca i Cabarrocas, V. Paret, Y. Bounouh, and J.C. Martin: "Optimum doping level in a-Si:H and a-SiC:H materials". J. Appl. Phys. 83 (1998) 830.

     

    1. P. Sladek, P. St'ahel, P. Roca i Cabarrocas, and P. Morin: "Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant photocurrent method". Phil. Mag.B 77 (1998) 1049.

     

    1. P. Roca i Cabarrocas, N. Layadi, M. Kunst, C. Clerc, and H. Bernas: "Optical and transport properties of amorphous and microcrystalline silicon films prepared by excimer laser assisted rf glow discharge deposition". J. Vac. Sci and Technol. A16 (1998) 436.

     

    1. C. Guedj, J. Boulmer, G. Nouet, C. Godet, and P. Roca i Cabarrocas: "New buffer concept inherent to pulsed laser induced epitaxy". Appl. Phys. Lett. 72 (1998) 2292.

     

    1. E. Bertran, S.N. Sharma, G. Viera, J. Costa, P. St'ahel, and P. Roca i Cabarrocas: "Effet of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge". J. Mat. Res. 13 (1998) 2476.

     

    1. P. Roca i Cabarrocas, S. Hamma, S.N. Sharma, J. Costa, and E. Bertran: "Nanoparticle formation in low pressure silane plasmas: Bridging the gap between a-Si:H and µc-Si films". J. Non Cryst. Solids 227-230 (1998) pp. 871-875.

     

    1. S. Hamma and P. Roca i Cabarrocas: "Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution". J. Non Cryst. Solids 227-230 (1998) 852.

     

    1. C. Longeaud, J.P. Kleider, P. Roca i Cabarrocas, S. Hamma, R. Meaudre and M. Meaudre. "Characterization of a new a-Si:H like material: Hydrogenated polymorphous silicon". J. Non Cryst. Solids 227-230 (1998) 96.

     

    1. R. Brenot, P. Bulkin, P. Roca i Cabarrocas, B. Drévillon, and R. Vanderhaghen: In-situ characterization of microcrystalline silicon by Time Resolved Microwave Conductivity". J. Non Cryst. Solids 227-230 (1998) 1001.

     

    1. P. St'ahel, S. Hamma, P. Sladek, and P. Roca i Cabarrocas: "Metastability studies in silicon films: from short-range ordered to medium- and long-range ordered materials". J. Non Cryst. Solids 227-230 (1998) 276.

     

    1. P. Sladek, P. St'ahel, M.L. Thèye, and P. Roca i Cabarrocas: "The hydrogen effusion induced structural changes and defects in a-SiGe:H films: Dependence upon the microstructure". J. Non Cryst. Solids 227-230 (1998) 437.

     

    1. R. Brenot, R. Vanderhaghen, B. Drévillon, and P. Roca i Cabarrocas: "Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth". Appl. Phys. Lett. 74 (1999) 58.

     

    1. P. Roca i Cabarrocas and S. Hamma: "Microcrystalline silicon growth on a-Si:H: Effects of hydrogen". Thin Solid Films 337 (1999) 23.

     

    1. R. Brenot, R. Vanderhaghen, B. Drévillon, T. Mohammed-Brahim, and P. Roca i Cabarrocas : "Contactless electronic transport analysis of microcrystalline silicon" . Thin Solid Films 337 (1999) 63.

     

    1. R. Butté, R. Meaudre, M. Meaudre, S. Vignoli, C. Longeaud, J. P. Kleider, P. Roca i Cabarrocas: "Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon", Philosophical Magazine B79 (1999) 1079.

     

    1. M. Meaudre, R. Meaudre, R. Butté, S. Vignoli, C. Longeaud, J.P. Kleider, P. Roca i Cabarrocas: "Midgap density of states in hydrogenated polymorphous silicon" J. of Appl. Phys. 86 (1999) 946-950.

     

    1. S. Hamma and P. Roca i Cabarrocas: "Determination of the mobility gap of µc-Si:H and of the band discontinuities at the µc-Si:H/a-Si:H interface using in-situ Kelvin probe technique". Appl. Phys. Lett. 74 (1999) 3218.

     

    1. Vignoli, R. Butté, R. Meaudre, M. Meaudre, and P. Roca i Cabarrocas : « Structural properties depicted by optical measurements in hydrogenated polymorphous silicon". J. Phys. Condens. Matter 11 (1999) 8749.

     

    1. J.P. Kleider, C. Longeaud, M. Gauthier, M. Meaudre, R. Meaudre, R. Butté, S. Vignoli, and P. Roca i Cabarrocas. "Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space charge limited current measurements". Appl. Pys. Lett. 75 (1999) 3351.

     

    1. P. Roca i Cabarrocas, R. Brenot, R. Vanderhaghen, B. Drévillon, and I. French: "Stable microcrystalline silicon thin film transistors produced by the layer-by-layer technique". J. Appl. Phys. 86 (1999) 7079.

     

    1. A. Fontcuberta, J. Bertomeu and P. Roca i Cabarrocas. "The role of hydrogen in the formation of microcrystalline silicon". Materials Science & Engineering B 69 (1999) 559.

     

    1. R. Brenot, B. Drévillon, P. Bulkin, P. Roca i Cabarrocas and R. Vanderhaghen. "Process monitoring of semiconductor thin film and interfaces by spectroellipsometry". Applied Surface Science 154-155 (2000) 283.

     

    1. A. Hadjadj, P. Roca i Cabarrocas, and B. Equer : "Mobility edges shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide". Phil Mag. B 80 (2000)1317.

     

    1. A. Hadjadj, L. Boufendi, S. Huet, S. Schelz, P. Roca i Cabarrocas, H. Estrade-Szwarckopf, and B. Rousseau: "Role of surface roughness in laser induced crystallization of nanostrucutured silicon films". J. Vac. Sci. Technol. A18 (2000) pp. 529-535.

     

    1. A. Fontcuberta i Morral, R. Brenot, E.A.G. Hamers, R. Vanderhaghen, and P. Roca i Cabarrocas: "In situ investigation of polymorphous silicon deposition". J. of Non Cryst. Solids  266-269 (2000) 48.

     

    1. P. Roca i Cabarrocas: "Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films". J. of Non Cryst. Solids 266-269 (2000) 31.

     

    1. R. Butté, S. Vignoli, M. Meaudre, R. Meaudre, O. Marty, and P. Roca i Cabarrocas: "Structural, optical and electrical properties of polymorphous silicon films". J. of Non Cryst. Solids 266-269 (2000) 263.

     

    1. Y. Poissant and P. Roca i Cabarrocas: "Optimizing phosphorous and boron doped layers for stable p-i-n solar cells". J. of Non Cryst. Solids 266-269 (2000) 1134.

     

    1. R. Brenot, R. Vanderhaghen, B. Drévillon, and P. Roca i Cabarrocas: "Real-time measurement of transversal ambipolar diffusion coefficient in microcrystalline silicon". J. of Non Cryst. Solids 266-269 (2000) 336.

     

    1. A.S. Abramov, A. I. Kosarev, and P. Roca i Cabarrocas: "Kinetics of defects and electron, hole diffusion lengths during light soaking and consequent annealing". J. of Non Cryst. Solids 266-269 (2000) 419.

     

    1. A. Hadjadj, A. Beorchia, P. Roca i Cabarrocas, L. Boufendi, S. Huet, and J.L. Bubendorff: "Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films ". J. of Phys. D: Applied Phys. 34 (2001) 690.

     

    1. A. Hadjadj, A. Beorchia, L. Boufendi, S. Huet, and P. Roca i Cabarrocas: "Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed glow discharge: correlation with the plasma duration ". J. Vac. Sci. Technol. A19 (2001) 124.

     

    1. R.B. Wehrspohn, M.J. Powell, S.C. Deane, I. French, and P. Roca i Cabarrocas: "Dangling bond defect state creation in microcrystalline silicon thin film transistors". Appl. Phys. Lett. 77 (2000) 750.

     

    1. T. Globus, G. Ganguly, and P. Roca i Cabarrocas: "Optical characterization of hydrogenated silicon thin films using interference technique". J. Appl. Phys. 88    (2000) 1907.

     

    1. E.A.G. Hamers, A. Fontcuberta i Morral, C. Niikura, R. Brenot, and P. Roca i Cabarrocas: "Contribution of ions to the growth of amorphous, polymorphous and microcrystalline silicon thin films, and their effect on the structural and electronic properties". J. Appl. Phys. 88, 3674 (2000).

     

    1. A. Fontcuberta i Morral and P. Roca i Cabarrocas : "Shedding light on the growth of amorphous, polymorphous, protocrystalline and microcrystalline silicon thin films". Thin Solid Films 383, 161 (2001).

     

    1. R. Brenot, R. Vanderhaghen, B. Drévillon, P. Roca i Cabarrocas, R. Rogel, and T. Mohammed-Brahim: "Transport mechanisms in microcrystalline silicon". Thin Solid Films 383, 53 (2001).

     

    1. T. Seth and P. Roca i Cabarrocas: "Plasma deposition of carbon films at room temperature from C2H2-Ar mixtures: anodic versus cathodic films. Thin Solid Films 383, 216 (2001).

     

    1. A.S. Abramov, A.I. Kosarev, P. Roca i Cabarrocas, M.V. Shutov, and A.J. Vinogradov : "Photoinduced effects in RF and VHF a-Si :H films deposited with different ion bombardment". Thin Solid Films 383, 178 (2001).

     

    1. S. Hamma and P. Roca i Cabarrocas : "Low temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon : optimum crystalline fractions for solar cells applications". Solar Energy Materials and Solar Cells 69 (2001) pp. 217-239.

     

    1. V. Paillard, P. Puech, R. Sirvin, S. Hamma, and P. Roca i Cabarrocas : "Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry". J. of Appl. Phys. 90, 3276 (2001).

     

    1. P. Roca i Cabarrocas, S. Kumar, V. Tripathi, P. Bulkin, R. Brenot, B. Drévillon, R. Vanderhaghen, and I. French: "Low Temperature Plasma Processed Microcrystalline Silicon Thin Films for Large Area Electronics". Solid State Phenomena Vols. 80-81 (2001) 361.

     

    1. S. Kumar, R. Brenot, B. Kalache, V. Tripathi, R. Vanderhaghen, B. Drévillon and P. Roca i Cabarrocas: "Highly crystalline Intrinsic Microcrystalline Silicon Films using SiF4/Ar/H2 Glow Discharge Plasma". Solid State Phenomena Vols. 80-81 (2001) 237.

     

    1. B. Kalache, R. Brenot, V. Tripathi, S. Kumar, R. Vanderhaghen and P. Roca i Cabarrocas: "Effects of Ion Bombardment on Microcrystalline Silicon Growth". Solid State Phenomena Vols. 80-81 (2001) 71.

     

    1. C. Niikura, R. Vanderhaghen, B. Drévillon, P. Roca i Cabarrocas, R. Rogel, and T. Mohammed-Bahim: “Growth mechanisms and structural properties of microcrystalline silicon films depostied by catalyttic CVD”. Thin Solid Films 395 (2001) 178-183.

     

    1. A. Fontcuberta i Morral and P. Roca i Cabarrocas : "Etching and hydrogen diffusion mechanisms during hydrogen plasma exposure of silicon thin films". J. Non Cryst. Solids 299-302, pp. 196-200 (2002)

     

    1. A. Fontcuberta i Morral, H. Hofmeister, and P. Roca i Cabarrocas : "Structure of plasma-deposited polymorphous silicon". J. Non Cryst. Solids 299-302 284 (2002).

     

    1. B. Kalache, A.I. Kosarev, R. Vanderhaghen, and P. Roca i Cabarrocas : "Ion bombardement effects on the microcrystalline silicon growth mechanisms and structure". J. Non Cryst. Solids 299-302 63 (2002).

     

    1. J.P. Kleider and P. Roca i Cabarrocas : "Reverse bias annealing effects of Schottky diodes : evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon". J. Non Cryst. Solids 299-302 551 (2002).

     

    1. W. Bronner, J.P. Kleider, R. Brüggemann, P. Roca i Cabarrocas, D. Mencaraglia and M. Mehring : "Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon". J. Non Cryst. Solids 299-302 551 (2002).

     

    1. C. Voz, J. Puigdollers, A. Orpella, R. Alcubilla, A. Fontcuberta i Morral, V. Tripathi, and P. Roca i Cabarrocas : "Thin film transistors with polymorphous silicon active layer". J. Non Cryst. Solids 299-302, pp. 1345-1350 (2002).

     

    1. R. Vanderhaghen, S. Kasouit, R. Brenot, V. Chu, J.P. Conde, F. Liu, A. de Martino, and P. Roca i Cabarrocas : "Electronic transport in microcrystalline silicon controlled by trapping and intra-grain mobility". J. Non Cryst. Solids 299-302 365 (2002).

     

    1. S. Kasouit, S. Kumar, R. Vanderhaghen, P. Roca i Cabarrocas, and I. French : "Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor". J. Non Cryst. Solids 299-302, pp. 113 (2002).

     

    1. S. K. Ram, S. Kumar, R. Vanderhaghen, and P. Roca i Cabarrocas : "A critical investigation of the electron transport behaviour in microcrystalline silicon films". J. Non Cryst. Solids 299-302 411 (2002).

     

    1. T. Globus, P. Roca i Cabarrocas, and B. Gelmont : "Defect related absorption in hydrogenated silicon films". J. Non Cryst. Solids 299-302 615 (2002).

     

    1. V. Paillard, P. Roca i Cabarrocas, A. Zwick, and G. Landa : "Vibrational properties of nanostructured hydrogenated silicon thin fillms produced by modulated PECVD". J. Non Cryst. Solids 299-302, pp. 280 (2002).

     

    1. Y. Poissant, P. Chatterjee, and P. Roca i Cabarrocas : "Metastability study and optimization of polymorphous silicon solar cells : the state of the art". J. Non Cryst. Solids 299-302, pp. 1173 (2002).

     

    1. P. Roca i Cabarrocas, A. Fontcuberta i Morral and Y. Poissant : "Growth and optoelectronic properties of polymorphous silicon thin films". Thin Solid Films Vol. 403-404, 39 (2002).

     

    1. A. Hadjadj, A. Beorchia, P. Roca i Cabarrocas and L. Boufendi: “Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films”. Thin Solid Films Vol. 403-404, 139 (2002).

     

    1. P. Roca i Cabarrocas, A. Fontcuberta i Morral, S. Lebib, and Y. Poissant : "Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large area electronics", Pure Appl. Chem. 74, 359 (2002).

     

    1. H. Touir and P. Roca i Cabarrocas: “Optical dispersion relations for crystalline and microcrystalline silicon”. Phys. Rev B 65, 155330 (2002).

     

    1. N. Souffi, M. Daouahi, L. Chahed, K. Zellama, and P. Roca i Cabarrocas : "Photo-induced changes in optoelectronic properties of hydrogenated amorphous silicon films deposited using pure and highly helium diluted silane". Solid State Communications 122, 259 (2002).

     

    1. A. Hadjadj, B. Equer, A. Beorchia, and P. Roca i Cabarrocas : "Contact potential measurements with local Kelvin probe". Philosophical Magazine B 82 (2002) 1257-1266.

     

    1. M. E. Gueunier, J.P. Kleider, S. Lebib, P. Roca i Cabarrocas, R. Meaudre, and B. Canut. "Properties of polymorphous silicon-germanium alloys deposited under high hydrogen dilution and at high pressure".  J. Appl. Phys. 92 (2002) pp 4959-4967.

     

    1. G. Viera, M. Mikikian, E. Bertran, P. Roca i Cabarrocas, and L. Boufendi: “Atomic structure of the nanocrystalline silicon particles appearing in nanostructured silicon thin films produced in low temperature radiofrequency plasmas” J. Appl. Phys. 92 (2002) 4684.

     

    1. P. Roca i Cabarrocas : "Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics”. Current Opinion in Solid State and Materials Science. Vol. 6 (2002) 439-444.

     

    1. P. Roca i Cabarrocas, A. Fontcuberta i Morral, A.V. Kharchenko, S. Lebib, L. Boufendi, S. Huet, M. Mikikian, M. Jouanny and A. Bouchoule : "Plasma Grown Particles : from Injected Gases to Nanoparticles and Nanomaterials, from Injected Particles to Dust Clouds in the PKE Experiment", Dusty Plasmas in the New Millennium : 3rd International Conference on the Physics of Dusty Plasmas, ed. R. Bharuthram, M.A. Hellberg, P.K. Shukla and F. Verheest, AIP Conference Proceedings 649 45.

     

    1. Y. Poissant, P. Chatterjee, and P. Roca i Cabarrocas : “Microcrystalline silicon N layers for amorphous silicon P-I-N solar cells”. J. Appl. Phys. 93 (2003) pp. 170-174.

     

    1. B. Kalache, A.I. Kosarev, R. Vanderhaghen, and P. Roca i Cabarrocas : "Ion bombardement effects on the microcrystalline silicon growth mechanisms and on the film properties". J. Appl. Phys. 93 (2003) pp 1262-1273.

     

    1. J. Ebothe, I.V. Kytik, P. Roca i Cabarrocas, C. Godet, and B. Equer: "Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films". J. Phys. D: Appl. Phys.36 (2003) pp 713-718.

     

    1. T. Novikova, B. Kalache, Kh. Hassouni, W. Morscheidt, and P. Roca i Cabarrocas: "Numerical model of hydrogen plasmas: effects of frequency and pressure". J. Appl. Physics 93 (2003) pp. 3198-3206.

     

    1. R. Meaudre, R. Butté, S. Vignoli, M. Meaudre, L. Saviot, O. Marty, and P. Roca i Cabarrocas : "Structural properties and recombination processes in hydrogenated polymorphous silicon". Eur. Phys. J. AP 22 (2003) pp. 171-178.

     

    1.  P. Roca i Cabarrocas, A. Fontcuberta i Morral, B. Kalache, and Samir Kasouit: “Microcrystalline silicon thin Films grown by PECVD. Growth mechanisms and grain size control. Solid State Phenomena 93 (2003) pp. 257-268.

     

    1.  A. V. Kharchenko, V. Suendo, and P. Roca i Cabarrocas: “Plasma studies under polymorphous silicon deposition conditions”. Thin Solid Films 427 (2003) 236-240.

     

    1. O. Saadane, C. Longeuad, S. Lebib and P. Roca i Cabarrocas: “What makes a thin fim semiconductor suitable for solar cell applications ?”. Thin Solid Films 427 (2003) 241-246.

     

    1.  M. Brinza, G. Adriaenssens and P. Roca i Cabarrocas: “Time-of-flight measurements of the carrier drift mobilities in polymorphous silicon samples”. Thin Solid Films 427 (2003) 123-126.

     

    1.  M.E. Gueunier, J.P. Kleider, P. Chatterjee, P. Roca i Cabarrocas, and Y. Poissant: “Study of pm-SiGe:H films for p-i-n devices and tandem solar cells”. Thin Solid Films 427 (2003) 247-251.

     

    1.  H. Aguas, P. Roca i Cabarrocas, S. Lebib, V. Silva, E. Fortunato, and R. Martins: "Polymorphous silicon deposited in large area reactor at 13 and 27 MHz". Thin Solid Films 427 (2003) 6-10.

     

    1.  S. Kasouit, P. Roca i Cabarrocas, and R. Vanderhaghen: "DTRMC, a probe of transverse transport in microcrystalline silicon". Thin Solid Films 427 (2003) 335-339.

     

    1. S. Kasouit, P. Roca i Cabarrocas, R. Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, I. French, J. Rocha and B. Vitoux: " Effect of deposition conditions and dielectric plasma treatments on the electrical properties of microcrystalline silicon TFTs". Thin Solid Films 427 (2003) 67-70.

     

    1. K. Wang, P. Filloux, N. Paraire, P. Roca i Cabarrocas, and P. Bulkin : " Two-Dimensional Photonic Crystals by Focused-Ion-Beam Etching of Multilayer Membranes”. Journal of Vacuum Science & Technology B 21, 966 (2003).

     

    1. O. Saadane, S. Lebib, A.V. Kharchenko, Ch. Longeaud, and P. Roca i Cabarrocas: "Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane-hydrogen and silane-helium mixtures". J. Appl. Phys. 93, 9371 (2003).

     

    1. N. Chaâbane, A.V. Kharchenko, H. Vach and Pere Roca i Cabarrocas: “ Optimization of plasma parameters for the production of silicon nanocrystals". New Journal of Physics 5 (2003) 37.

     

    1. Y. Poissant, P. Chatterjee, and P. Roca i Cabarrocas : "Analysis and optimization of the performance of polymorphous silicon solar cells: experimental characterization and computer modeling”. J. Appl. Phys. 94 (2003) pp. 7305-7316.

     

    1. S. Tchakarov, P. Roca i Cabarrocas, U. Dutta, P. Chatterjee, and B. Equer: "Experimental study and modelling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon". J. Appl. Phys. 94 (2003) pp. 7317-7327.

     

    1. H. Aguas, V. Silva, E. Fortunato, S. Lebib, P. Roca i Cabarrocas, I. Ferreira, L. Guimaraes, and R. Martins: "Large area deposition of polymorphous silicon by PECVD at 27.12 MHz and 13.56 MHz". Jpn. J. Appl. Phys. 42 (2003) pp. 4935-4942.

     

    1. F. Kail, A. Fontcuberta i Morral, A. Hadjadj, P. Roca i Cabarrocas, and A. Beorchia: "Hydrogen plasma etching of amorphous silicon. A study by a combination of spectroscopic ellipsometry and trap-limited diffusion model". Phil. Mag. B
      Vol. 84, N° 6, (2003) pp. 595-609.

     

    1. R. Martins, H. Águas, I. Ferreira, E. Fortunato S. Lebib, P. Roca i Cabarrocas, L. Guimarães, "Polymorphous silicon films deposited at 27.12 MHz” Advanced Materials Chemical Vapor Deposition, 9 (6) (2003) pp.333-337.

     

    1. I. Martin, M. Vetter, A. Orpella, C. Voz, J. Puigdollers, R. Alcubilla, A.V. Kharchenko, and P. Roca i Cabarrocas: "Improvement of crystalline silicon surface passivation by hydrogen plasma treatment". Appl. Phys. Lett. 84 (2004) pp 1474-1477.

     

    1. A. Fontcuberta i Morral, P. Roca i Cabarrocas and C. Clerc: "Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements". Phys. Rev. B 69 (2004) 125307.

     

    1. P. Roca i Cabarrocas: "New approches for the production of nano-, micro-, and polycristalline silicon thin films". Phys. Stat. Solidi (c) 1, N°5 (2004) pp. 1115-1130.

     

    1. P. Roca i Cabarrocas, S. Kasouit, B. Kalache, R. Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, and I. French: “Microcrystalline Silicon: An Emerging Material for Stable Thin Film Transistors”. Journal of the Society for Information Display. Special issue on selected papers from the 2003 SID Int. Symposium.Vol 12 n n° 1 (2004) pp.3 -9.

     

    1. D. Franta, I. Ohlidal, P. Klapetek, and P. Roca i Cabarrocas, Thin Solid Films 455-456, 399 (2004).

     

    1. E. Pihan, A. Slaoui, P. Roca i Cabarrocas, A. Focsa:  "Polycrystalline silicon films by aluminum-induced crystallization: crystallization process versus silicon deposition method". Thin Solid Films 451-452 (2004) pp. 328-333.

     

    1.  V. Suendo, A.V. Kharchenko and P. Roca i Cabarrocas: "The effects of RF plasma excitation frequency and doping gas on the deposition of polymorphous silicon films” Thin Solid Films 451-452 (2004) pp. 259-263.

     

    1. N. Chaâbane, H. Vach and P. Roca i Cabarrocas: “The role of initial vibrational and rotational reactant excitation for the reaction dynamics of H2 (o, Jo) with Si+(2P)”. J. Phys. Chem. A 108 (2004) 12.

     

    1. S. Lebib and P. Roca i Cabarrocas: “Structure and hydrogen bonding in plasma deposited silicon thin films”. Eur. Phys. J. Appl. Phys. 26 (2004) pp. 17-27.

     

    1. H. Águas, L. Raniero, E. Fortunato, A. Viana, P. Roca i Cabarrocas, R. Martins. “Role of the rf frequency on the structure and composition of polymorphous silicon”. J. Non Cryst. Solids 338-340 (2004) pp. 183-187.

     

    1. S. Kasouit, P. Roca i Cabarrocas, R. Vanderhaghen, Y. Bonnassieux, I.D. French, and M. Elyaakoubi: “Effects of grain size and plasma induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTs”. J. Non Cryst. Solids 338-340 (2004) pp. 369-373.

     

    1. S. Tchakarov, U. Dutta, P. Roca i Cabarrocas, and P. Chatterjee: “Modelling of reverse bias dark currents in PIN structures using amorphous and polymorphous silicon". J. Non Cryst. Solids 338-340 (2004) pp. 766-771.

     

    1. S. Kasouit, J. Damon-Lacoste, R. Vanderhaghen, and P. Roca i Cabarrocas: "Contribution of  plasma generated nanocrystals to the growth of microcrystalline silicon thin films". J. Non Cryst. Solids 338-340 (2004) pp. 86-90.

     

    1. R. Vanderhaghen, S. Kasouit, J. Damon-Lacoste, F. Lui, and P. Roca i Cabarrocas: "Study of transport, trapping and recombination mechanisms in microcrystalline silicon by transient photoconductivity”. J. Non Cryst. Solids 338-340 (2004) pp. 336-340.

     

    1. C. Guedj, N. Moussy, W. Rabaud, P. Roca i Cabarrocas, S. Tchakarov and J.P. Kleider: "UV-visible sensors based on polymorphous silicon". J. Non Cryst. Solids 338-340 (2004) pp. 749-753.

     

    1. S. Tchakarov, Debajyoti Das, O. Saadane, A.V. Kharchenko, V. Suendo, F. Kail, and P. Roca i Cabarrocas: "Helium versus hydrogen dilution in the optimization of polymorphous silicon solar cells”. J. Non Cryst. Solids 338-340 (2004) pp. 668-672.

     

    1. U. Dutta, P. Chatterjee, P. Roca i Cabarrocas, P. Chaudhuri and R. Vanderhaghen: " Calculation of the position-dependent inner collection efficiency in PIN solar cells using an electrical-optical model". J. Non Cryst. Solids 338-340 (2004) pp. 677-681.

     

    1. N. Chaâbane, P. Roca i Cabarrocas, and H. Vach: "Trapping of plasma produced nanocrystalline silicon particles on a low temperature substrate”. J. Non Cryst. Solids 338-340 (2004) pp. 51-55.

     

    1. B. Kalache, T. Novikova, A. Fontcuberta i Morral, P. Roca i Cabarrocas, W. Morscheidt, and K. Hassouni: "Investigation of coupling between chemistry and discharge dynamics in radio frequency hydrogen plasmas in the Torr regime". J. Physics D: Appl. Phys. 37 (2004) pp. 1765-1773.

     

    1. D. Daineka, V. Suendo, and P. Roca i Cabarrocas: "Temperature dependence of the optical functions of amorphous silicon based materials: application to in situ temperature measurements by spectroscopic ellipsomery". Thin Solid Films 468 (2004) pp. 298-302.

     

    1. J. Farjas, Ch. Rath, P. Roura and P. Roca i Cabarrocas: “Crystallization kinetics of hydrogenated amorphous thick films grown by plasma enhanced chemical vapor deposition”. Applied Surface Science 238 (2004) pp. 165-168.

     

    1. P. Roca i Cabarrocas, N. Chaâbane, A.V. Kharchenko and S.Tchakarov: " Polymorphous silicon thin films produced in dusty plasmas: application to solar cells”. Plasma Phys. Control. Fusion 46 (2004) pp B235-B243.

     

    1. V. Suendo, G. Patriarche, and P. Roca i Cabarrocas: “Luminescence of polymorphous silicon carbon alloys”. Optical Materials 27 (2004) pp. 953-957.

     

    1. S. Vignoli, P. Mélinon, B. Masenelli, P. Roca i Cabarrocas, A.M. Flank, and Ch. Longeaud : "Overcoordination, and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties”. J. Phys.: Condens. Matter 17 (2005) pp. 1279-1288.

     

    1. J. Farjas, J. Serra-Miralles, P. Roura, E. Bertran, P. Roca i Cabarrocas : "Anomalous crystallization of hydrogenated amorphous silicon during fast heating ramps". J. Mat. Res. 20 (2005) pp. 277-281.

     

    1. Ch. Rath, J. Farjas, P. Roura, F. Kail, P. Roca i Cabarrocas, and E. Bertran,: "Thermally induced structural transformation on polymorphous silicon". J. Mat. Res. 20 (2005) pp. 2562-2567.

     

    1. S. Lebib and P.Roca i Cabarrocas: “Effects of ion energy on the crystal size and hydrogen bonding in plasma deposited nanocrystalline silicon thin films”. J. Appl. Phys. 97 (2005) 104334.

     

    1. K. Morigaki , K. Takeda, H. Hikita and P. Roca i Cabarrocas: “Ligth-induced defect creation and thermal annealing in hydrogenated polymorphous silicon - Repeated cycles of illumination and annealing”. Phil. Mag. 85 (2005) pp. 3393-3407.

     

    1. K. Morigaki , K. Takeda, H. Hikita and P. Roca i Cabarrocas: “Light-induced defect creation in hydrogenated polymorphous silicon”. Mat. Sci. and Eng. B 121 (2005) pp. 34-41.

     

    1. F. Kail, A. Hadjadj and P. Roca i Cabarrocas: “Hydrogen diffusion and induced crystallization in intrinsic and doped hydrogenated amorphous silicon films”. Thin Solid Films 487 (2005) 126-131.

     

    1. U. Dutta, S. Tchakarov, M. Uszpolewicz, P. Roca i Cabarrocas and P. Chatterjee: “Evolution of current-induced defects in hydrogenated amorphous silicon p-i-n solar cells: inference from simulation of experimental characteristics”. J. Appl. Phys. 98 (2005) 044511.

     

    1. Th. Nguyen-Tran, V. Suendo, and P. Roca i Cabarrocas: “Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys”. Appl. Phys. Lett. 87 (2005) 011903.

     

    1. H. Vach, Q. Brulin, N. Chaâbane, T. Novikova, P. Roca i Cabarrocas, B. Kalache, K. Hassouni, S. Botti and L. Reining: “Growth dynamics of hydrogenated silicon nanoparticles under realistic conditions of a plasma reactor”.  Computational Materials Science 35 (2006) pp. 216 – 222.

     

    1. B. Kalache, P. Roca i Cabarrocas, and A. Fontcuberta i Morral. “Observation of incubation times in the nucleation of silicon nanowires obtained by the Vapor-Liquid-Solid method. Jpn. J. Appl. Phys. Express Letter 45 (2006) pp. L190-193.

     

    1. J. Ebothé, K.J. Plucinski, P. Roca i Cabarrocas and I. V. Kityk : "  Non linear optical diagnostic of a-Si:H thin films deposited by RF-glow discharge”. PHYSICA  E 31 (2006) pp. 132-135.

     

    1. N. Chaâbane, V. Suendo, H. Vach and P. Roca i Cabarrocas:  “Soft landing of silicon nanocrystals in plasma enhanced chemical vapour deposition”. Appl. Phys. Lett. 88 (2006) 203111.

     

    1. A. S. Gudovskikh J.-P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti,
      J.-C.Muller, P.-J. Ribeyron, E. Rolland: “Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy”. Thin Solid Films 511-512 (2006) 385-389.

     

    1. Y. Veschetti, J.-C.Muller, J. Damon-Lacoste, P. Roca i Cabarrocas, A. S. Gudovskikh, J.-P. Kleider, P.-J. Ribeyron, E. Rolland: “Optimisation of amorphous and polymorphous thin silicon layers for formation of front-side heterojunction solar cells on P-type crystalline silicon substrates”. Thin Solid Films 511-512 (2006) 543-547.

     

    1. S.K. Ram, S. Kumar, R. Vanderhaghen, B. Drévillon and P. Roca i Cabarrocas: “Recombination traffic in highly crystallized undoped microcrystalline silicon films studied by steady state photoconductivity”.  Thin Solid Films 511-512 (2006) 556-561.

     

    1. A. Fontcuberta i Morral and P. Roca i Cabarrocas: “Role of hydrogen diffusion on the growth of polymorphous and microcrystalline silicon thin films”.  Eur. Phys. J. Appl. Phys. 35 (2006) 165.

     

    1. P. Roura, J. Farjas, Ch. Rath, J. Serra-Miralles, E. Bertran, and P. Roca i Cabarrocas: “Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials”. Phys. Rev. B 73 (2006) 085203.

     

    1. A. Abramov, Y. Djeridane, R. Vanderhaghen, and P. Roca i Cabarrocas: “Large grain µc-Si:H films deposited at low temperature: growth process and electronic properties”. J. Non Cryst. Solids 352 (2006) pp. 964-967.

     

    1. J. Damon-Lacoste, P. Roca i Cabarrocas, P. Chatterjee, Y. Veschetti; A.S. Gudovskikh, J.P. Kleider and P.J. Ribeyron: “About the efficiency limits of heterojunction solar cells”. J. Non Cryst. Solids 352 (2006) pp. 1928-1932.

     

    1. V. Suendo, G. Patriarche and P. Roca i Cabarrocas: “Influence of deposition parameters and post-deposition plasma treatments on the photoluminescence of polymorphous silicon carbon alloys”. J. Non Cryst. Solids 352 (2006) pp. 1357-1360.

     

    1. V. Suendo and P. Roca i Cabarrocas: “Plasma diagnostics in silane-methane-hydrogen plasmas under pm-Si1-xCx:H deposition conditions: Correlation with film properties”. J. Non Cryst. Solids 352 (2006) pp. 959-963.

     

    1. M.E. Gueunier-Farret, C. Bazin, J.P. Kleider, C. Longeaud, P. Bulkin, D. Daineka, T.H. Dao, P. Roca i Cabarrocas, P. Descamps, T. Kervyn de Meerendre, P. Lempoel, M. Meaudre and R. Meaudre: “Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates”. J. Non Cryst. Solids 352 (2006) pp. 1913-1916.

     

    1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Study of anomalous behaviour of steady state photoconductivity in highly crystallized undoped microcrystalline Silicon films”. J. Non Cryst. Solids 352 (2006) pp. 1172-1175.

     

    1. F. Kail, S. Fellah, A. Abramov, A. Hadjadj and P. Roca i Cabarrocas: “Experimental evidence for extended hydrogen diffusion in silicon thin films during ligth soaking”. J. Non Cryst. Solids 352 (2006) pp. 1083-1086.

     

    1. V. Tripathi, Y.N. Mohapatra, and P. Roca i Cabarrocas: “Trapping phenomena in intrinsic hydrogenated amorphous silicon like materials studies using current transient spectroscopies”. J. Non Cryst. Solids 352 (2006) pp. 1130-1133.

     

    1. T. Nguyen-Tran, V. Suendo, P. Roca i Cabarrocas, L.T. Nittala, S.N. Bofle and J.R. Abelson: “Fluctuation microscopy evidence for enhanced nanoscale structural order in polymorphous silicon thin films”. J. Appl. Phys. 100 (2006) 094319.

     

    1. P.J. Alet, S. Palacin, P. Roca i Cabarrocas, B. Kalache, M. Firon and R. De Bettignies: “Hybrid solar cells based on thin film silicon and P3HT”. Eur. Phys. J. Appl. Phys. 36 (2006) pp. 231-234.

     

    1. P. Roca i Cabarrocas, Th Nguyen-Tran, Y. Djeridane, A. Abramov, E. Johnson and G. Patriarche: “Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices”. J. Phys. D: Appl. Phys. 40 (2007) pp. 2258-2266.

     

    1. E.V. Johnson and P. Roca i Cabarrocas: “Spectral response and field enhanced reverse current in a-Ge:H nip photodiodes“. Solar Energy Mat. and Solar Cells 91 (2007) 877-881.

     

    1. R. Rao, F. Kail and P.Roca i Cabarrocas: “Effect of substrate on hydrogen in and out diffusion from a-Si:H thin films”. Journal of Materials Science: Materials in Electronics 18 (2007) 1051-1056.

     

    1. K. Morigaki, K. Takeda, H. Hikita and P. Roca i Cabarrocas: “Dispersive processes of the light-induced defect creation in hydrogenated amorphous silicon”. Solid State Communications 142 (2007) pp. 232-236.

     

    1. S.K. Ram, S. Kumar and P. Roca i Cabarrocas: “Numerical model of steady-state photoconductivity process in highly crystallized undoped µc-Si:H films”. Thin Solid Films 515 (2007) 7576-7580.

     

    1. S.K. Ram, S. Kumar and P. Roca i Cabarrocas: “Role of microstructure in electronic transport behaviour of in highly crystallized undoped µc-Si:H films”. Thin Solid Films 515 (2007) 7469-7474.

     

    1. S.K. Ram, S. Kumar and P. Roca i Cabarrocas: “Microstructure and surface roughness study of highly crystallized µc-Si:H films”. Thin Solid Films 515 (2007) 7619-7624.

     

    1. Y. Djeridane, A. Abramov and P. Roca i Cabarrocas: “Silane versus silicon tetrafluoride in the growth of microcrystalline silicon thin films by standard radiofrequency glow discharge”. Thin Solid Films 515 (2007) 7451-7454.

     

    1. A.S. Gudovskikh, S. Ibrahim, J-P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti and P.J. Ribeyron: "Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits". Thin Solid Films 515 (2007) 7481-7485.

     

    1. M. Brinza, G.J. Adriaenssens, A. Abramov and P. Roca i Cabarrocas: Influence of deposition parameters on hole mobility in polymorphous silicon".  Thin Solid Films 515 (2007) 7504-7507.

     

    1. L. Sanchez, A. Kosarev, A. Torres, A. Ilinskii, Y. Kudriavtsev, R. Asomoza, P. Roca i Cabarrocas and A. Abramov: " Study of GeySi1-y:H films deposited by low frequency plasma". Thin Solid Films 515 (2007) 7603-7606.

     

    1. T.H. Dao, M.E. Hgueunier-Farret, D. Daineka, P. Bulkin, P. Roca i Cabarrocas, J.P. Kleider, C. Longeaud, C. Bazin, T. Kervyn de Meerendre, P. Descamps and P. Leempoel: "Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance". Thin Solid Films 515 (2007) 7650-7653

     

    1. M. Oudwan, Y. Djeridane, A. Abramov, B. Aventurier, P. Roca i Cabarrocas and F. Templier: "Influence of process steps on the performance of microcrystalline silicon thin film transistors". Thin Solid Films 515 (2007) 7662-7666.

     

    1. J. Arbiol, B. Kalache, P. Roca i Cabarrocas, J.R. Morante, and A. Fontcuberta i Morral: “Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour-solid-solid mechanism”. Nanotechnology 18 (2007) 305606 (8pp).

     

    1. Th. Nguyen-Tran, P. Roca i Cabarrocas and G. Patriarche: “Study of radial growth rate and size control of silicon nanocrystals in square-wave modulated silane plasmas”. Applied Phys. Lett. 91 (2007) 111501.

     

    1. D. Munoz; C. Voz, I. Martin, A. Orpella, J. Puigdollers, R. Alcubilla, F. Villar, J. Bertomeu, J. Andreu, J. Damon-Lacoste and P. Roca i Cabarrocas: "Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C". Thin Solid Films  (2007).

     

    1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Influence of the statistical shift of the Fermi level on the conductivity behaviour in microcristalline silicon”. Physical Review B 77 (2008) 045212.

     

    1. I. Stenger, Th. Nguyen-Tran, A. Abramov, C. Barthou, and P. Roca i Cabarrocas: “Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature”. Mat. Sci. and Eng. B 147 (2008) 245-248.

     

    1. N. Pham, P. Roca i Cabarrocas, A. Hadjadj, A. Beorchia, F. Kail and L. Chahed: “Hydrogen evolution during deposition of microcrystalline silicon by chemical transport”. Phil. Mag. 88 (2008) 297.

     

    1. P. Roca i Cabarrocas, Y. Djeridane, V.D. Bui, Y. Bonnassieux and A. Abramov: “Critical issues in Plasma Deposition of Microcrystalline Silicon for thin film transistors”. Solid State Electronics 52 (2008) 422.

     

    1. M. Oudwan, A. Abramov, P. Roca i Cabarrocas and F. Templier: “Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors”. Solid State Electronics 52 (2008) 432.

     

    1. R. Ferre, A. Orpella, D. Munoz, I. Martin, F. Recart, J. Puigdollers, P. Roca i Cabarrocas, and R. Alcubilla: “Very low surface recombination velocity of crystalline silicon passivated by phosphorous-doped a-SiCxNy:H (n) alloys”. Progr. Photovolt: Res. Appl. 16 (2008) 123-127.

     

    1. M. Nath, P. Chatterjee, J. Damon-Lacoste and P. Roca i Cabarrocas: “Criteria for improved open-circuit voltage in a-Si:H(N) / c-Si(P) front heterojunction solar cells”. J. Appl. Phys. 103 (2008) 034506.

     

    1. E.V. Johnson, G. Patriarche and P. Roca i Cabarrocas: “Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals”. Appl. Phys. Lett. 92 (2008) 103108.

     

    1. I. Stenger, A. Abramov, C. Barthou, Th. Nguyen-Tran, A. Frigout, and P. Roca i Cabarrocas: “Strong orange/red electroluminescence from hydrogenated polymorphous silicon carbon light-emitting device”. Appl. Phys. Lett. 92 (2008) 241114.

     

    1. A. Abramov, D. Daineka; Y. Djeridane, and P. Roca i Cabarrocas:, “Detailed study of surface and interface properties of µc-Si films”. J. Non Cryst. Solids 354 (2008) 2218-2222; doi:10.1016/j.jnoncrysol.2007.10.099.

     

    1. Y. M. Soro, A. Abramov, M.E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas, and J.P. Kleider: “Device grade hydrogenated polymorphous silicon deposited at high rates”. ”. J. Non Cryst. Solids 354 (2008) 2092-2095; doi:10.1016/j.jnoncrysol.2007.10.047.

     

    1. J. P. Kleider, Y. M. Soro, R. Chouffot, A. S. Gudovskikh, P. Roca i Cabarrocas, J. Damon-Lacoste, D. Eon and P. J. Ribeyron: “Hihgh interfacial conductivity at amorphous silicon / crystalline silicon heterojunctions”. J. Non Cryst. Solids 354 (2008) 2641-2645; doi:10.1016/j.jnoncrysol.2007.10.087.

     

    1. E.V. Johnson, M. Nath, P. Roca i Cabarrocas, A. Abramov, and P. Chatterjee: “Why does the open-circuit voltage in a microcrystalline silicon solar cell decrease with increasing crystalline volume fraction ?”. J. Non Cryst. Solids 354 (2008) 2455-2459; doi:10.1016/j.jnoncrysol.2007.10.0421.

     

    1. R. Chouffot, S. Ibrahim, R. Brüggemann, A. S. Gudovskikh, J. P. Kleider, M. Scherff, W.R. Fahrner, P. Roca i Cabarrocas, D. Eon, and P. J. Ribeyron: “Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells”. J. Non Cryst. Solids 354 (2008) 2416-2420; doi:10.1016/j.jnoncrysol.2007.10.032.

     

    1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Normal and anti Meyer-Neldel rule in conductivity of highly crystallized undoped microcrystalline silicon films”. J. Non Cryst. Solids 354 (2008) 2263-2267; doi:10.1016/j.jnoncrysol.2007.10.051.

     

    1. S. K. Ram, S. Kumar and P. Roca i Cabarrocas: “Fractional composition of large crystalline grains: A unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon”. J. Non Cryst. Solids 354 (2008) 2242-2247; doi:10.1016/j.jnoncrysol.2007.10.049.

     

    1. K. Morigaki, K. Takeda, H. Hikita, C. Ogihara, and P. Roca i Cabarrocas: ”The kinetics of the ligth-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation”. J. Non Cryst. Solids 354 (2008) 2131-2134; doi:10.1016/j.jnoncrysol.2007.10.060.

     

    1. J. Rath, R.E.I. Schropp, P. Roca i Cabarrocas, and F.D. Tichelaar: “Thin film silicon devices deposited at 100 °C : A study on the structural order of the photoactive layer”. J. Non Cryst. Solids 354 (2008) 2652.

     

    1. J. Rath, R.E.I. Schropp, P. Roca i Cabarrocas: “Structural order of thin film silicon made at 100 °C”. Physica Status Solidi C 5 (2008) 5.

     

     

    1. J.P. Kleider, A.S. Gudovskikh and P. Roca i Cabarrocas: “Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements”. Appl. Phys. Lett. 92 (2008) 162101; DOI: 10.1063/2907695.

     

    1. Q. Zhang, E.V. Johnson, Y. Djeridane, A. Abramov, and P. Roca i Cabarrocas: “Decoupling crystalline volume fraction and Voc in microcrystalline silicon pin solar cells by using a µc-Si:F:H intrinsic layer”. Phys. Stat. Sol. Rapid Research Letters 2 (2008) 154-156. http://dx.doi.org/10.1002/pssr.2008.02.106

     

    1. A. Datta, J. Damon-Lacoste, P. Roca i Cabarrocas and P. Chatterjee: “Defect states on the surfaces of a P-type c-Si wafer and how they control the performance of a double heterojunction solar cell”. Solar Energy Mat. and Solar Cells 92 (2008) 1500-1507.   http://dx.doi.org/10.1016/j.solmat.2008.06.015

     

    1. E.V. Johnson, Y. Djeridane, A. Abramov and P. Roca i Cabarrocas: “Experiment and modelling of very low frequency oscillations in RF-PECVD: a signature for nanocrystal dynamics”. Plasma Sources Science and Technolgy 17 (2008) 035029.

     

    1. S. Abolmasov, L. Kroely and P. Roca i Cabarrocas: “Negative corona in silane-argon-hydrogen mixtures at low pressures”. J. Phys. D: Appl. Phys. 41 (2008) 165203.

     

    1. K. Takeda, K. Morigaki, H. Hikita, and P. Roca i Cabarrocas: “Thermal annealing effects of dangling bonds in hydrogenated polymorphous silicon”. J. Appl. Phys. 104 (2008) 053715. DOI: 10.1063/1.2975975.

     

    1. J. Arbiol, A. Fontcuberta i Morral, S. Estradé, F. Peiró, B. Kalache, P. Roca i Cabarrocas and J. Ramon Morante: “Influence of teh (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires”. J. Appl. Phys. 104 (2008) 064312.

     

    1. P.-J. Alet, L. Eude, S. Palacin, P. Roca i Cabarrocas, "Transition from thin gold layers to nano-islands on TCO for catalyzing the growth of one-dimensional nanostructures", Physica Status Solidi (a), 205, 1429-1434 (2008) DOI: 10.1002/pssa.200778158

     

    1. Y. Djeridane, A. Abramov and P. Roca i Cabarrocas: “Silane versus silicon tetrafluoride in the growth of microcrystalline silicon films by standard radio frequency glow discharge”. Thin Solid Films 515 (2008) pp. 7451-7454.

     

    1. A.S. Gudovskikh, R. Chouffot, J. P. Kleider, N.A. Kaluzhniy, V.M. Lantratov, S.A. Mintairov, J. Damon-Lacoste, D. Eon, P. Roca i Cabarrocas and P.-J. Ribeyron: “New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements”. Thin Solid Films 516 (2008) pp. 6786-6790.

     

    1. Madhumita Nath, P. Roca i Cabarrocas, E.V. Johnson, A. Abramov, and P. Chatterjee: “The open circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity”. Thin Solid Films 516 (2008) pp. 6974-6978.

     

    1. M. Soro, A. Abramov, M.E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas and J.P. Kleider: “Polymorphous silicon thin films deposited at high rate: transport properties and density of states”. Thin Solid Films 516 (2008) pp. 6888-6891.

     

    1. Sanjay K. Ram, Md.N Islam, P. Roca i Cabarrocas and Satyendra Kumar: “Structural determination of nanocrystalline silicon films using ellipsometry and Raman spectroscopy”. Thin Solid Films 516 (2008) pp. 6863-6868.

     

    1. D. Muñoz, C. Voz, I. Martin, A. Orpella, J. Puigdollers, R. Alcubilla, F. Villar, J. Bertomeu, J. Andreu, J. Damon-Lacoste and P. Roca i Cabarrocas: “Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-wire CVD at 200 °C”. Thin Solid Films 516 (2008) pp. 761-764.

     

    1. D. Muñoz, C. Voz, I. Martin, A. Orpella, R. Alcubilla, F. Villar, J. Bertomeu, J. Andreu, P. Roca i Cabarrocas: “Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells”. Thin Solid Films 516 (2008) pp. 6782-6785.

     

    1. P. Leempoel, P. Descamps, T. Kervyn de Meerendré, J. Charliac, P. Roca i Cabarrocas, P. Bulkin, D. Daineka, T.H. Dao, J.P. Kleider, M.E. Gueunier-Farret, C. Longeaud: “Distributed electron cyclotron resonance plasma: A technology for large area deposition of device quality a-Si:H at very high rate”. Thin Solid Films 516 (2008) pp. 6853-6857.

     

    1. P. Roca i Cabarrocas, P. Bulkin, D. Daineka, T.H. Dao, P. Leempoel, P. Descamps, T. Kervyn de Meerendré and J. Charliac: “Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance”. Thin Solid Films 516 (2008) pp. 6834-6838.

     

    1. Pierre-Jean Alet, Linwei YU, Serge Palacin and Pere Roca i Cabarrocas : “Low-temperature growth of crystalline silicon nanowires on ITO with indium catalysts generated in-situ”. Journal of Materials Chemistry  (2008) 18, 5187 - 5189. DOI: 10.1039/B813046A

     

    1. P. Roura, J. Farjas and P. Roca i Cabarrocas: “Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon”. J. Appl. Phys. 104 (2008) 073521. DOI: 10.1063/1.2990767.

     

    1. P. Roca i Cabarrocas, Y. Djeridane, Th. Nguyen Tran, E.V. Johnson, A. Abramov and Q. Zhang: “Low temperature plasma synthesis of silicon nanocrystals: a strategy for high deposition rate and efficient polymorphous and microcrystalline solar cells”. Plasma Phys. Control. Fusion 50 (2008) 124037. doi: 10.1088/0741-3335/50/12/124037.

     

    1. Linwei Yu, Pierre-Jean Alet, Gennaro Picardi, Isabelle Maurin and Pere Roca i Cabarrocas : « Synthesis, morphology and compositional evolution of silicon nanowires directly grown on SnO2 substrates”. Nanotechnology 19 (2008) 485605. http://www.iop.org/EJ/abstract/0957-4484/19/48/485605/

     

    1. R. Chouffot, A. Brezard-Oudot, J.-P. Kleider, R. Brüggemann, M. Labrune, P. Roca i Cabarrocas and P.-J. Ribeyron: “Modulated photoluminescence as an effective lifetime measurement method: Application to a-Si:H/c-Si heterojunction solar cells”. Mat. Sci. and Eng. B (2008).

     

    1. Alexei Abramov, Pere Roca i Cabarrocas, Kunal Girotra, Hong Chen, Seungkyu Park, Kyongtae Park, Jong-moo Hyh, Joonhoo Choi, Chiwoo Kim and Jun H. Souk: “Reliable characterization of microcrystalline silicon films for thin film transistor applications”. Jpn. J. Appl. Phys. 47 (2008) pp. 7308-7301. DOI: 10.1143/JJAP.47.7308.

     

    1. R. Negru, Y. Bonnassieux, S. Tchakarov, and P. Roca i Cabarrocas: “A new p+-i-n+ photodiode SPICE model for CMOS pixel applications”. Eur. Phys. J. Appl. Phys. 41, 205–213 (2008). DOI: 10.1051/epjap:2008019.

     

    1. S.N. Abolmasov, L. Kroely and P. Roca i Cabarrocas: “Negative corona discharge: application to nanoparticle detection in RF reactors”. Plasma sources Sci. and Technol. 18 (2009) 015005. doi:10.1088/0963-0252/18/1/015005.

     

    1. Y. Djeridane, P. Roca i Cabarrocas, Ka Hyun Kim, Se Hwan Kim, Jung Bo Bae, Jun Young Jeong, and Jing Jang: “Fabrication and characterization of ion-doped p-type nanocrystalline silicon thin film transistors”. Journal of the Korean Physical Society 54 (2009) pp. 437-440.

     

    1. A. Hadjadj, N. Pham, P. Roca i Cabarrocas, and O. Jbara: “Effect of doping on the amorphous to microcristalline transition in a hydrogenated amorphous silicon under hydrogen plasma treatment”. Appl. Phys. Lett. 94 (2009) 061909.  doi: 10.1063/1.30866.

     

    1. Linwei Yu, Pierre-Jean Alet, Gennaro Picardi, and Pere Roca i Cabarrocas: “An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires”. Phys. Rev. Lett. 102 (2009) 125501. DOI: 10.1103/PhysRevLett.102.1255. Distinguished as Editors' Suggestion. Selected for the April 6, 2009 issue of Virtual Journal of Nanoscale Science & Technology.

     

    1. J. Damon-Lacoste and P. Roca i Cabarrocas: “Towards a better physical understanding of a-Si:H/c-Si heterojunction solar cells”. J. Appl. Phys. 105 (2009) 063712. DOI: 10.1063/1.3091283.

     

    1. I. Zardo, L. Yu, S. Conesa-Boj, S. Estradé, Pierre Jean Alet, J. Rössler, M. Frimmer, P. Roca i Cabarrocas, F. Peiró, J. Arbiol, J.R. Morante, and A. Fontcuberta i Morral: “Gallium assisted plasma enhanced chemical vapour deposition of silicon nanowires”. Nanotechnology 20 (2009) 155602. doi:10.1088/0957-4484/20/15/155602.

     

    1. Linwei Yu, Benedict O’Donnnell, Pierre Jean-Alet, S. Conesa-Boj, F. Peiró, J. Arbiol, and P. Roca i Cabarrocas: “Plasma enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts”. Nanotechnology 20 (2009) 225604.

     

    1. P. Roura, J. Farjas and P. Roca i Cabarrocas: “Restricted epitaxial growth of crystallites in hydrogenated nanocrystalline silicon during thermal crystallization experiments”. J. Nanoscience and Nanotechnology 9 (2009) pp. 3700-3707.

     

    1. E.V. Johnson, L. Kroely and P. Roca i Cabarrocas: “Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin film photovoltaics”. Solar Energy Mat. and Solar Cells  93 (2009) 1904-1906.doi:10.1016/j.solmat.2009.06.018

     

    1. F. Kail, J. Farjas, P. Roura and P. Roca i Cabarrocas : "Molecular hydrogen diffusion in nanostructured amorphous silicon thin films”. Phys. Rev. B. 80  (2009) 073202-1 à 4, DOI: 10.1103/PhysRevB.80.073202. Selected for the August 31, 2009 issue of Virtual Journal of Nanoscale Science & Technology

     

    1. L. Yu and P. Roca i Cabarrocas : "Initial nucleation and growth of in-plane solid-liquid-solid silicon nanowires catalyzed  by tin”. Phys. Rev. B 80 (2009) 085313. DOI: 10.1103/PhysRevB.80.085313

     

    1. J.P. Kleider, R. Chouffot, A.S. Gudovskikh, P. Roca i Cabarrocas, M. Labrune, P.-J. Ribeyron, and R. Brüggeman: “Electronic and structural properties of the amorphous/crystalline silicon interface”. Thin Solid Films 517 (2009) pp 6386-6391. doi:10.1016/j.tsf.2009.02.092.

     

    1. P.-J. Alet, S. Palacin, P. Roca i Cabarrocas, "Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts", Thin Solid Films 517 (2009) pp. 6405-6408.  doi:10.1016/j.tsf.2009.02.106.

     

    1. P. Roura, J. Farjas, and P. Roca i Cabarrocas: “Characterization of amorphous and nanostructured Si films by differential scanning calorimetry”. Thin Solid Films 517 (2009) pp. 6239-6242.  doi:10.1016/j.tsf.2009.02.081.

     

    1. N. Pham, A. Hadjadj, P. Roca i Cabarrocas, O. Jbara and F. Kail: “Interpretation of the hydrogen evolution during deposition of microcrystalline silicon by chemical transport”. Thin Solid Films 517 (2009) pp. 6229.  doi:10.1016/j.tsf.2009.02.072.

     

    1. R. Chouffot, A. Brezard-Oudot, J.-P. Kleider, R. Brüggemann, M. Labrune, P. Roca i Cabarrocas and P.-J. Ribeyron: “Modulated photoluminescence as an effective lifetime measurement method: Application to a-Si:H/c-Si heterojunction solar cells”. Materials Science and Engineering B 159-160 (2009) pp. 186-189.

     

    1. A. Datta, J. Damon-Lacoste, M. Nath, P. Roca i Cabarrocas and P. Chatterjee: “Dominant role of interfaces in solar cells with N-a-Si:H/Pc-Si heterojunction with intrinsic thin layer”. Materials Science and Engineering B 159-160 (2009) pp. 10-13.

     

    1. S. K. Ram, Md. Nazrul Islam, S. Kumar and P. Roca i Cabarrocas: “Evidence of bimodal crystallite size distribution in µc-Si:H films”. Materials Science and Engineering B 159-160 (2009) pp. 34-37.

     

    1. N. Pham, Y. Djeridane, A. Abramov, A. Hadjadj, and P. Roca i Cabarrocas: “Role of hydrogen in the peeling of hydrogenated microcrystalline silicon films”. Materials Science and Engineering B 159-160 (2009) pp. 27-30.

     

    1. L. Yu, M. Oudwan, O. Moustpha, F. Fortuna and P. Roca i Cabarrocas: “Guided growth of in-plane silicon nanowires”. Appl. Phys. Lett. 95 (2009) 113106. doi:10.1063/1.3227667. Selected for the September 28, 2009 issue of Virtual Journal of Nanoscale Science & Technology. Vol. 20, Issue 13.

     

    1. M. Oudwan, Oumkelthoum Moustapha, Alexey Abramov, Dmitriy Daineka, Yvan Bonnassieux, and Pere Roca i Cabarrocas: “Threshold voltage shift underelectrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors”. Phys. Stat. Solidi A 207 (2009) pp. 1245-1248.  DOI:10.1002/pssa.200925403.

     

    1. M .Labrune, M. Moreno and P. Roca i Cabarrocas: “Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous doped films at 175 °C by rf-PECVD”. Thin Solid Films 518 (2009) 2528-2530, doi:10.1016/j.tsf.2009.09.143

     

    1. Linwei Yu, Benedict O’Donnell, Pierre-Jean Alet, S Conesa-Boj, F Peiro, J Arbiol and Pere Roca i Cabarrocas: “Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts”. Nanotechnology 20 (2009) 225604. doi:10.1088/0957-4484/20/22/225604.

     

    1. E.V. Johnson, F. Dadouche, M.E. Gueunier-Farret, J.P. Kleider and P. Roca i Cabarrocas: “Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells”.  Phys. Status Solidi A, 207 (2010) pp. 691-694 / DOI 10.1002/pssa.200982723

     

    1. M. Moreno, M. Labrune, and P. Roca i Cabarrocas: “Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation”. Solar Energy Materials and Solar Cells, 94 (2010) pp. 402-405. doi:10.1016/j.solmat.2009.10.016, 

     

    1. M. Foldyna, M. Moreno, P. Roca i Cabarrocas, and A. de Martino : "Scattered light measurements on textured crystalline silicon substrates using angle-resolved Mueller matrix polarimeter”. Applied Optics 49 (2010) pp. 505-512. doi:10.1364/AO.49.000505

     

    1. A. Hadjadj, N. Pham, P. Roca i Cabarrocas, and O. Jbara: "Self-bias voltage diagnostics for the amorphous-to-microcrystalline transition in a-Si:H under a hydrogen-plasma treatment”. J. Vac. Sci. Technol. A 28 (2010) pp. 309-313. DOI: 10.1116/1.3305719.

     

    1. L. Yu and P. Roca i Cabarrocas: “Growth mechanism and dynamics of in-plane solid-liquid-solid silicon nanowires”. Phys. Rev. B 81 (2010) 085323 1-11, DOI: 10.1103/PhysRevB.81.085323. Selected for the March 1, 2010 issue of Virtual Journal of Nanoscale Science & Technology.

     

    1. M. Rahmouni, A. Datta, P. Chatterjee, J. Damon-Lacoste, C. Ballif and P. Roca i Cabarrocas: “Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study”. J. Appl. Phys. 107 (2010) 054521. doi: 10.1063/1.3326945.

     

    1. K. Morigaki, H. Hikita, K? Takeda, and P. Roca i Cabarrocas: ”The kinetics of ligth-induced defect creation in hydrogenated polymorphous silicon – stretched exponential relaxation”. Phys. Status Solidi C 7 (2010) 692-695. DOI 10.1002/psc.200982683.

     

    1. M. Moreno, D. Daineka and P. Roca i Cabarrocas: “Plasma texturing for silicon solar cels: from pyramids to inverted pyramids-like structures”. Solar Energy Materials and Solar Cells, 94 (2010) 733-737. doi:10.1016/j.solmat.2009.12.015

     

    1. M. Moreno, D. Daineka and P. Roca i Cabarrocas: “Plasmas for texturing, cleaning, and deposition: towards one pump down process for heterojunction solar cells”. Phys. Stat. Sol. C 7, No. 3–4, 1112–1115 (2010) / DOI 10.1002/pssc.200982704.

     

    1. A. Abramov and P. Roca i Cabarrocas: “Addition of SiF4 to standard SiH4+H2 plasma: an effective way to reduce oxygen contamination in µc-Si:H films”. Phys. Stat. Sol. C 7, No. 3–4, 529– 532 (2010) / DOI 10.1002/pssc.200982798.

     

    1. W. Favre, M. Labrune, F. Dadouche, A.S. Gudovskihh, P. Roca i Cabarrocas and J.P. Kleider: “Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements”. Phys. Status Solidi C 7, No. 3–4, 1037– 1040 (2010) / DOI 10.1002/pssc.200982800.

     

    1. S. K. Ram, L. Kroely, S. Kasouit, P. Bulkin and P. Roca i Cabarrocas: “Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system”. Phys. Status Solidi C 7, No. 3–4, 553– 556 (2010) / DOI 10.1002/pssc.200982817.

     

    1. L. Kroely, S. K. Ram, P. Buklin and P. Roca i Cabarrocas: “Microcrystalline silicon films and solar cells deposited at high rate by matrix distributed electron cyclotron resonance (MDECR). Phys. Status Solidi C 7, No. 3–4, 517–520 (2010) / DOI 10.1002/pssc.200982789.

     

    1. M. Nath, S. Chakraborty, K. H. Kim, E. V. Johnson, P. Roca i Cabarrocas, and P. Chatterjee: “Performance of amorphous and microcrystalline silicon pin solar cells under variable ligth intensity”. Phys. Status Solidi C 7, No. 3–4, 1105– 1108 (2010) / DOI 10.1002/pssc.200982726.

     

    1. O. Moustapha, A. Abramov, D. Daineka, M. Oudwan, Y. Bonnassieux, and P. Roca i Cabarrocas: “Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors”. Phys. Status Solidi C 7, No. 3–4, 1140–1143 (2010) / DOI 10.1002/pssc.200982782.

     

    1. S. K. Ram, L. Kroely, P. Bulkin and P. Roca i Cabarrocas: “Effect of ion energy on stgructural and electrical properties of intrinsic microcrystalline silicon layers deposited in a matrix distributed electron cyclotron resonance plasma reactor”. Phys. Status Solidi A 207, No. 3, 591–594 (2010) / DOI 10.1002/pssa.200982905.

     

    1. Sonia Conesa-Boj, Ilaria Zardo, Sonia Estradé, Linwei Yu, Pierre Jean Alet, Pere Roca i Cabarrocas, Joan Ramon Morante, Francesca Peiro, Anna Fontcuberta i Morral and Jordi Arbiol: “Defect formation on Ga-Catalyzed Silicon Nanowires”. Crystal Growth & Design, Vol. 10, No. 4 (2010) pp. 1534-1543. DOI: 10.1021/cg900741y.

     

    1. A. Hadjadj_ N. Pham, P. Roca i Cabarrocas, O. Jbara, and G. Djellouli: “Ellipsometry investigation of the amorphous-to-microcrystalline transition in a-Si:H under hydrogen plasma treatment”. J. Appl. Physics 107 (2010) 083509.

     

    1. I. Zardo, S; Conesa-Boj, S. Estradé, L. Yu, F. Peiro, P. Roca i Cabarrocas, J.R. Morante, J. Arbiol, A. Fontcuberta i Morral: “Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition”. Appl. Phys. A 100 (2010) pp 287-296; DOI 10.1007/s00339-010-5802-1.

     

    1. M. Nath S. Chakraborty, E.V. Johnson, A. Abramov, P. Roca i Cabarrocas, and P. Chatterjee: “Performance of microcrystalline silicon single and double junction solar cells of different degrees of crystallinity”. Solar Energy Materials and Solar Cells 94 (2010) 1477–1480. doi:10.1016/j.solmat.2010.02.048.

     

    1. Ounsi El Daif, Emmanuel Drouard, Guillaume Gomard, Anne Kaminski, Alain Fave, Mustapha Lemiti, Sungmo Ahn, Sihan Kim, Pere Roca i Cabarrocas, Heonsu Jeon, Christian Seassal: “Absorbing one-dimensional planar photonic crystal for amorphous silicon solar cell”. Optics Express 13 September 2010 / Vol. 18, No. 103 / OPTICS EXPRESS A293

     

    1. Linwei Yu, Benedict O’Odonnell, Jean-Luc Maurice and Pere Roca i Cabarrocas: “Core-shell structure and unique faceting of Sn-crystallized silicon nanowires”. Appl. Phys. Lett. 97 (2010) 023107. doi:10.1063/1.3464557

     

    1. F. Kail, J. Farjas, P. Roura, C. Secouard, O. Nos, J. Bertomeu, F. Alzina, and P. Roca i Cabarrocas : "Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments”. Appl. Phys. Lett. 97 (2010) 031918. doi:10.1063/1.3464961.

     

    1. L. Yu, Benedict O’Donnell, Pierre-Jean Alet, and Pere Roca i Cabarrocas  “All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application”. Solar Energy Materials and Solar Cells 94 (2010) 1855–1859. doi:10.1016/j.solmat.2010.06.021

     

    1. L. Borowik, K. Kusiaku, D. Deresmes, D. Théron, H. Diesinger, Th. Melin, T. Nguyen-Tran, and P. Roca i Cabarrocas: “Mapping charge transfers between quantum levels using non contact atomic force microscopy”. Phys. Rev. B 82 (2010) 073302. DOI: 10.1103/PhysRevB.82.073302.

     

    1. M. Moreno and P. Roca i Cabarrocas: “Ultra-thin crystalline silicon films produced by plasma assisted epitaxial growth on silicon wafers and their transfer to foreign substrates”. EPJ Photovoltaics 1, 10301 (2010). DOI: 10.1051/epjpv/20110001.

     

    1. C. Longeaud, P.P. Ray, A. Bhaduri, D. Daineka, E.V. Johnson, and P. Roca i Cabarrocas: “Aluminum recycling from reactor walls: a source of contamination in a-Si:H thin films”. J. Vac. Sci. Technol. A 28 (2010) pp. 1381-1387. DOI: 10.1116/1.3503620

     

    1. François Templier, Julien Brochet, Bernard Aventurier, David Cooper, Alexey Abramov, Dmitri Daineka and Pere Roca i Cabarrocas: “Polymorphous silicon: a promising material for thin film transistors for low cost and high performance active-matrix OLED displays”. IEICE Trans. Electron. Vol 93 (2010) 1490-1494.

     

    1. Junzhuan Wang, V. Suendo, A. Abramov, Linwei Yu and Pere Roca i Cabarrocas: “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism. Appl. Phys. Lett.  97 (2010) 221113.

     

    1. K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, C. Longeaud, S. Reynold, and P. Roca i Cabarrocas: “Structure-rrelated strain and stress in thin hydrogenated microcrystalline silicon”. Journal of Physics: Conference series 253 (2010) 012056. doi:10.1088/1742-6596/253/1/012056.

     

    1. Jean-Paul Kleider, Jose Alvarez, Alexander Vitalievitch Ankudinov, Alexander Sergeevith Gudovskikh, Ekaterina Vladimirovna Gushchina, Martin Labrune, Olga Alexandrovna Maslova, Wilfried Favre, Marie-Estelle Gueunier-Farret, Pere Roca i Cabarrocas, and Eugene Ivanovitch Terukov: “Characterization of silicon heterojunctions for Solar Cells”. Nanoscale Research Letters. 16 Feb. 2011. http://www.nanoscalereslett.com/content/6/1/152

     

    1. Linwei Yu, Franck Fortuna, Benedict O’Donnell, Gilles Patriarche, and Pere Roca i Cabarrocas : “Stability and evolution of low-surface-tension metal catalyzed growth of silicon nanowires”. Appl. Phys. Lett.  98 (2011) 123113. doi:10.1063/1.3569817. Selected by the Virtual Journal of Nanoscale Science & Technology, April 4 , 2011.

     

    1. F. Dadouche, O. Béthouw, M.E. Gueunier-Farret, E.V. Johnson, P. Roca i Cabarrocas, C.Marchand and J.P. Kleider: “Geometrical optimization and electrical performance comparison of thin-film tandem structures based on pm-Si:H and µc-Si:H using computer simulation”. PV-Direct 2, 20301 (2011).  DOI: 10.1051/pvd/2011001

     

    1. Xianqin Meng, Guillaume Gomard, Ounsi El Daif, Emmanuel Drouard, Regis Orobtchouk, Anne Kaminski, Alain Fave, Mustapha Lemiti, Alexey Abramov, Pere Roca i Cabarocas, and Christian Seassal: “Absorbing photonic crystals for silicon thin-film solar cells: design, fabrication and experimental investigation”. Solar Energy Materials and Solar Cells

     

    1. R. Cariou, M. Labrune and P. Roca i Cabarrocas : " Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD"  Solar Energy Materials and Solar Cells. 95 (2011) 2260–2263, doi: 10.1016/j.solmat.2011.03.038.

     

    1. Chisato Niikura, Pere Roca i Cabarrocas and Jean-Eric Bourée: “Structural properties of microcrystalline silicon films prepared by hot-wire/catalytic chemical vapour deposition under conditions close to the transition from amorphous to microcrystalline growth”. Thin Solid Films 519 (2011) 4502-4505. doi:10.1016/j.tsf.2011.01.329.

     

    1. Linwei Yu and Pere Roca i Cabarrocas: “Morphology control and growth dynamics of in-plane solid-liquid-solid silicon nanowires”. Physica E doi:10.1016/j.physe.2011.06.005.

     

    1. E.V. Johnson, P. Prod’homme, C. Boniface, K. Huet, T. Emeraud, and P. Roca i Cabarrocas: ”Excimer laser annealing and chemical texturing of ZnO:Al sputtered at room temperature for photovoltaic applications”. Sol. Energy Mater. Solar Cells 95, (2011) 2823. DOI: 10.1016/j.solmat.2011.05.043.

     

    1. I. Martin, M. Labrune, A. Salomon, P. Roca i Cabarrocas, and R. Alcubilla : "Laser fired contacts applied to rear surface of heterojunction solar cells". Solar Energy Materials & Solar Cells 95 (2011) pp. 3119-3123. Doi: 10.1016/j.solmat.2011.06.049.

     

    1. F. Kail, J. Farjas, P. Roura, C. Secouard, O. Nos, J. Bertomeu, and P. Roca i Cabarrocas  :"The configurational energy gap between amorphous and crystalline silicon”. Physica Status Solid (RRL). 19 SEP 2011, DOI: 10.1002/pssr.201105333.

     

    1. L. Yu, W. Chen, B. O’Donnell, G. Patriarche, S. Bouchoule, Ph.  Pareige, R. Rogel, A.-C. Saalun, L. Pichon, and P. Roca i Cabarrocas : "Growth-in-place deployement of in-plane silicon nanowires". Appl. Phys. Lett. 99 (2011) 203104. [doi:10.1063/1.3659895]. Selected by Virtual Journal of  Nanoscale Science and Technology, November 28 (2011). Highlighted in the January 2012 issue of Nature Materials.

     

    1. M. Nath, S. Chakraborty, E.V. Johnson, A. Abramov, P. Roca i Cabarrocas, and P. Chatterjee: “Factors limiting the open circuit voltage in microcrystalline silicon solar cells”. EPJ Photovoltaics, 2 (2011) 20101. DOI: 10.1051/epjpv/2011025.

     

    1. C. Charpentier, P. Prod’homme, I.Maurin, M. Chaigneau, and P. Roca i Cabarrocas: “X-Ray diffraction and Raman spectroscopy for a bette understanding of ZnO:Al growth process”. EPJ Photovoltaics, (2011), DOI: 10.1051/epjpv/2011026.

     

    1. J. Alvarez, I. Ngo, M.E. Guelier-Farret, J.P. Kleider, L. Yu, P. Roca i Cabarrocas, S. Perraud, E. Rouvière, C. Celle, C. Mouchet, J.P. Simonato: “Conductive atomic force microscopy characterization of silicon nanowires”. Nanoscale Research Letters  6 (2011) 110,  http://www.nanoscaleresslett.com/contents/6/1/110.

     

    1. R. Darwich and P. Roca i Cabarrocas: “Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques”. Thin Solid Films 519 (2011) 5473–5480. doi:10.1016/j.tsf.2011.03.019.

     

    1. R. Darwich and P. Roca i Cabarrocas: “High deposition rate hydrogenated  polymorphous silicon characterized by different characterization techniques”. Thin Solid Films 519 (2011) 5364–5370. doi:10.1016/j.tsf.2011.02.038.

     

    1. M. Moreno, R. Boubekri and P. Roca i Cabarrocas: “Study of the effects of different fractions of large grains of µc-Si:H:F films on the infrared absorption on thin film solar cells”. Sol. Energy Mater. Sol. Cells 100 (2012) 16-20, doi:10.1016/j.solmat.2011.05.030.

     

    1. S. N. Abolmasov, P. A. Cormier, A. Torres Rios, R. Dussart, N. Semmar, A.L. Thomann, and P. Roca i Cabarrocas: “Probing dusty-plasma/surface interactions with a heat flux microsensor”. Appl. Phys. Lett.  100, 011601 (2012); doi: 10.1063/1.3674290.

     

    1. F. Kail, J. Molera, J. Farjas, P. Roura, C. Secouard and P. Roca i Cabarrocas : “Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon". J. Phys.: Condens. Matter 24 (2012) 095401. 095401 doi:10.1088/0953-8984/24/9/095401

     

    1. Junzhuan Wang, Linwei Yu, Sergey Abolmasov, Ka Hyun Kim and Pere Roca i Cabarrocas:  “Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon”. J. Appl. Phys. 111, (2012) 053108. doi.org/10.1063/1.3691904.

     

    1. Linwei Yu, Bendict O’Donnell, Martin Foldyna, and Pere Roca i Cabarrocas: “Radial junction solar cells on PECVD-grown silicon nanowires”. Nanotechnology 23 (2012) 194011,  stacks.iop.org/Nano/23/000000.

     

    1. D. Murias, C. Reyes-Betanzo, M. Moreno, A. Torres, A. Itzmoyotl, R. Ambrosio, M. Soriano, J. Lucas, P. Roca i Cabarrocas: “Black Silicon formation using dry etching for solar cells applications”. Materials Science and Engineering B 177 (2012) pp. 1509-1513. doi:10.1016/j.mseb.2012.03.038.

     

    1. Ka-Hyun KIM, Erik V. Johnson and Pere Roca i Cabarrocas: “Irreversible light-induced degradation and stabilization of hydrogenated polymorphous silicon solar cells”. Solar Energy Mat. and Solar Cells 105 (2012) 208-212. http://dx.doi.org/10.1016/j.solmat.2012.06.026.

     

    1. K. Kristova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, Ch. Longeaud, S. Reynolds, and P. Roca i Cabarrocas: “Stress Characterization of Thin Microcrystalline Silicon Films”. International Review of Physics (I.R/E.PHY.) 6 (2012) pp. 106-112.

     

    1. Linwei Yu, Franck Fortuna, Benedict O’Donnell, Taewoo Jeon, Martin Foldyna, Gennaro Picardi and Pere Roca i Cabarrocas: Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells”. Nano Letters 12 (2012) pp. 4153-4158. DOI: 10.1021/nl3017187.

     

    1. Ka Hyun Kim, Erik V. Johnson, Alexey Abramov, and P. Roca i Cabarrocas: “Ligth Induced electrical and topological changes in hydrogenated polymorphous silicon solar cells”.  EPJ Photovoltaics 3 (2012) 30301. DOI: 10.1051/epjpv/2012005.

     

    1. D. Senouci, R. Baghdad, A. Belfedal, L. Chahed, X. Portier, S. Charvet, K.H. Kim, P. Roca i Cabarrocas, and K. Zellama: “ Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature”. Thin Solid Films 522 (2012) pp. 186-192; doi: 10.1016/j.tsf.2012.08.014

     

    1. J. Cho, B. O’Donnell, Ka Huyn Kim, I. Ngo, L. Yu, and P. Roca i Cabarrocas : " Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass” Progress in Photovoltaics Research Applications (2012).  DOI: 10.1002/pip.1245.

     

    1. P. Roca i Cabarrocas, R. Cariou and M. Labrune: “ Low temperature plasma deposition of silicon thin films: from amorphous to crystalline”. J. Non Cryst. Solids 358 (2012) pp. 2000-2003. doi:10.1016/j.jnoncrysol.2011.12.113.

     

    1. Benedict O’Donnell, Linwei Yu, M. Foldyna and P. Roca i Cabarrocas: “Silicon nanowire solar cells grown by PECVD”. J. Non Cryst. Solids 358 (2012) 2299-2302. doi:10.1016/j.jnoncrysol.2011.11.026.

     

    1. A. Datta, Mun-Ho Song, J. Wang, M. Labrune, S. Chakroborty, P. Roca i Cabarrocas, P. Chatterjee: “Photoluminescence spectrum from heterojunction with intrinsic thin layer solar cells: An efficient tool for estimating wafer surface defects”. Journal of Non-Crystalline Solids 358 (2012) 2241–2244. doi:10.1016/j.jnoncrysol.2011.12.084.

     

    1. Taewo JEON, Bernard Geffroy, Denis Tondelier, Linwei Yu, Pascale Jegou, Bruno Jousselme, Serge Palacin, Pere Roca i Cabarrocas, and Yvan Bonnassieux: “Effects of acid-treated silicon nanowires on hybrid solar cells performance”. Solar Energy Materials and Solar Cells. 117 (2013) 632–637.  http://dx.doi.org/10.1016/j.solmat.2012.09.015.

     

    1. Inès Masiot, Clément Colin, Nicolas Péré-Laperne, Pere Roca i Cabarrocas, Christophe Sauvan, Philippe Lalanne, Jean-Luc Pelouard, and Stéphane Colin : "Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cells".Appl. Phys. Lett. 101 (2012) 163901.  Appl. Phys. Lett. 101, 163901 (2012); doi: 10.1063/1.4758468.

     

    1. L.Yu, M. Foldyna, B. O’Donnell, G. Picardi, and P. Roca i Cabarrocas: “Building radial junction thin-film solar cells on silicon nanowires”. SPIE Newsroom. 10.1117/2.1201204.004224

     

    1. Mohamed Boutchich, Jose Alvarez, Djicknoum Diouf, Pere Roca i Cabarrocas, Leyong Liao, Imura Masataka, Yasuo Koide and Jean-Paul Kleider: “Amorphous silicon diamond based heterojunctions with high rectification ratio”. J. non Cryst. Solids 358 (2012) pp. 2110-2133. doi:10.1016/j.jnoncrysol.2011.12.067

     

    1. M. Labrune, X. Bril, G. Patriarche, L. Largeau, O. Mauguin, and P. Roca i Cabarrocas : "Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C". EPJ Photovoltaics 3, 30303 (2012). DOI: 10.1051/epjpv/2012010.

     

    1. Jean-Christophe Dornstetter, Samir Kasouit, and Pere Roca i Cabarrocas: “Deposition of High-Efficiency Microcrystalline Silicon Solar Cells Using SiF4/H2/Ar Mixtures”. IEEE Journal of Photovoltaics, (2012) DOI : 10.1109/JPHOTOV.2012.2221683.

     

    1. S. Chakraborty, R. Cariou, M. Labrune, P. Roca i Cabarrocas, and P. Chatterjee: “Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study”. EPJ Photovoltaics 4, 45103 (2013).  DOI: 10.1051/epjpv/2013014.

     

    1. Inès Massiot, Clément Colin, Christophe Sauvan, Philippe Lalanne, Pere Roca i Cabarrocas, Jean-Luc Pelouard, and Stéphane Collin: “Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowires”. Optics Express Vol. 21, Iss. S3, pp. A372–A381 (2013). DOI:10.1364/OE.21.000372 | OPTICS EXPRESS A374.

     

    1. P. Roura, F.Taïr, J.Farjas and P.Roca i Cabarrocas: “Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon”. J. Appl. Phys.  113, 173515 (2013) [http://dx.doi.org/10.1063/1.4803888]

     

    1. S. Chakraborty, A. Datta, M. Labrune, P.  Roca i Cabarrocas, P. Chatterjee: “A modeling study of the performance of conventional diffused P/N junction and heterojunction solar cells at different temperatures”. EPJ Photovoltaics 4, 40101 (2013). DOI: 10.1051/epjpv/2013021.

     

    1. M. Chaigneau, E.V. Johnson, L. Kroely, P. Roca i Cabarrocas, R. Ossikovski: “Polarized Raman spectroscopy analysis of SiHX bonds in nanocrystalline silicon thin films”. Thin Solid Films 537 (2013) 145–148. http://dx.doi.org/10.1016/j.tsf.2013.03.021.

     

    1. Linwei Yu, Lorenzo Riguti, Maria Tchernycheva, Soumyadeep Misra, Martin Foldyna, Gennaro Picardi, and P. Roca i Cabarrocas: “Assessing individual radial junction solar cells over millions of VLS-grown silicon nanowires”. Nanotechnology 24 (2013) 275401 (8pp). doi:10.1088/0957-4484/24/27/275401.

     

    1. Ka-Hyun Kim, Bicher Haj Ibrahim, Erik V. Johnson, Antonello de Martino, and Pere Roca i Cabarrocas: “Real-time transmission Mueller polarimetry on hydrogenated polymorphous silicon under current injection”. J. Phys. D: Appl. Phys. 45 (2013) 045304, doi:10.1088/0022-3727/46/4/045304

     

    1. Mario Moreno, Gilles Patriarche and Pere Roca i Cabarrocas: “Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C”. Journal of Materials Research, volume 28 (2013) pp. 1626-1632. DOI: 10.1557/jmr.2013.52.

     

    1. Soumyadeep Misra, Linwei Yu, Wanghua Chen, and Pere Roca i Cabarrocas: Wetting Layer: the Key Player in Plasma-assisted Silicon Nanowire Growth Mediated by Tin”. The Journal of Physical Chemistry 117 (2013) pp. 17786-17tress790.

     

    1. M. Foldyna, L. Yu and P. Roca i Cabarrocas: “Theoretical short-circuit current density for different geometries and organizations of silicon nanowires in solar cells”. Solar Energy Materials and Solar Cells 117 (2013) pp. 645-651, http://dx.doi.org/10.1016/j.solmat.2012.10.014.

     

    1. S. Misra, L. Yu, M. Foldyna, and P. Roca i Cabarrocas: “High efficiency and Stable Hydrogenated Amorphous Silicon Radial Junction Solar Cells built on VLS-grown Silicon Nanowires”. Solar Energy Materials and Solar Cells 118 (2013) pp. 90-95 http://dx.doi.org/10.1016/j.solmat.2013.07.036

     

    1. Antonín Fejfar, Matěj Hývl, MartinLedinský, AliakseiVetushka, Jiří Stuchlík, Jan Kočka, SoumyadeepMisra, BenedictO’Donnell, Martin Foldyna, Linwei Yu, and Pere RocaiCabarrocas : “Microscopic measurements of variations in local (photo)electronic properties in nanostructured solar cells”. Solar Energy Materials and Solar Cells 119, 228  (2013), http://dx.doi.org/10.1016/j.solmat.2013.07.042.

     

    1. Bentouba Said, Hamouda Messaoud, Slimani Aek, Pere Roca i Cabarrocas, Bourouis Mahmoud, Coronas Alberto, Draoui Belkacem, Boucherit Med Seghirh: “Hybrid System and Environmental Evaluation Case House In South of Algeria”. Energy Procedia 36 ( 2013 ) pp. 1328 – 1338. doi: 10.1016/j.egypro.2013.07.151

     

    1. L. Borowik, T. Nguyen-Tran, P. Roca i Cabarrocas, and T. Melin: “Doped semiconductor nanocrystal junctions”. J. Appl. Phys. 114 (2013) 204305. http://dx.doi.org/10.1063/1.4834516.

     

    1. Martin Foldyna, Linwei Yu, Soumyadeep Misra, and Pere Roca i Cabarrocas: “Using nanowires to enhance light trapping in solar cells”. SPIE Newsroom, 5 December 2013. Doi 10.1117/2.1201311.005205

     

    1. B.A. Andreev, L.V. Gavrilenko, Yu.N. Drozdov, P.A. Yunin, D.A. Pryakhina, L.A. Mochalov, P.G. Sennikov, P. Bulkin, P. Roca i Cabarrocas : “Raman spectra of amorphous isotope-enriched 74Ge with low-strained Ge nanocrystals”. Thin Solid Films (2013) http://dx.doi.org/10.1016/j.tsf.2013.12.014.

     

    1. Rym Boukhicha, Coralie Charpentier, Patricia Prod'Homme, Pere Roca i Cabarrocas, Jean-François Lerat, Thierry Emeraud, Erik Johnson : "Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films”. Thin Solid Films 555 (2014) 13-17. http://dx.doi.org/10.1016/j.tsf.2013.08.014.

     

    1. Ka-Hyun Kim, Samir Kasouit, Erik V.Johnson, and Pere Roca i Cabarrocas: “Substrate versus superstrate configuration for stable thin film silicon solar cells”. Solar Energy Materials and Solar Cells 119 (2013) 124–128. http://dx.doi.org/10.1016/j.solmat.2013.05.045.

     

    1. M. Moreno, D. Murias, J. Martinez, C. Reyes-Betanzo, A. Torres, R. Ambrosio, P. Roca i Cabarrocas, and M. Escobar: “A comparative study of wet and dry texturing processes of c-Si wafers for the fabrication of solar cells”. Solar Energy 101 (2014) pp. 189-191. http://dx.doi.org/10.1016/j.solener.2014.01.004.

     

    1. Guillaume Gomard, Guillaume Gomard, Romain Peretti, Ségolène Callard,Xianqin Meng, Remy Artinyan, Thierry Deschamps, Pere Roca i Cabarrocas, Emmanuel Drouard, and Christian Seassal: “Blue light absorption enhancement based on vertically channelling modes in nano-holes arrays”. Appl. Phys. Lett. 104 (2014) 051119, http://dx.doi.org/10.1063/1.4864267.

     

    1. Amornrat Limmanee, Joaquim Nassar, Igor P. Sobkowicz, Jaran Sritharathikhun, Kobsak Sriprapha, Guillaume Courtois, Francois Moreau, and Pere Roca i Cabarrocas: “Characterization of a-Si:H/c-Si Hetero-Junctions by Time Resolved Microwave Conductivity Technique”. International Journal of Photoenergy. Volume 2014, Article ID 304580, 4 pages. http://dx.doi.org/10.1155/2014/304580.

     

    1. Linwei Yu, Soumyadeep Misra, Junzhuan Wang, Shengyi Qian, Martin Foldyna, Jun Xu, Yi Shi, Erik Johnson, and Pere Roca i Cabarrocas: “Understanding Light Harvesting in Radial Junction Amorphous Silicon Thin Film Solar Cells”. Scientific Reports DOI: 10.1038/srep04357. March 2014.

     

    1. D.А. Mansfeld, А.V. Vodopyanov, S.V. Golubev, P.G. Sennikov, L.A. Mochalov, B.А. Andreev, Yu N. Drozdov, М.N. Drozdov, V.I. Shashkin, P. Bulkin, P. Roca i Cabarrocas: “Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24 GHz) plasma from silicon tetrafluoride precursor”. Thin Solid Films 562 (2014) 114-117.  http://dx.doi.org/10.1016/j.tsf.2014.03.091.

     

    1. Jean-Christophe Dornstetter, Junkang, Bastien Bruneau, Erik V. Johnson and Pere Roca i Cabarrocas : “Material and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures". Can. J. Phys. 92 (2014) 740-743. dx.doi.org/10.1139/cjp-2013-0606.

     

    1. Wanghua Chen, Linwei Yu, Soumyadeep Misra, Zheng Fan, Philippe Pareige, Gilles Patriarche, Sophie Bouchoule, and Pere Roca i Cabarrocas: “Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth”. Nature Communications 5 (2014) 4134. DOI: 10.1038/ncomms5134.

     

    1. Jean-Christophe Dornstetter, Bastien Bruneau, Pavel Bulkin, Erik V. Johnson, and Pere Roca i Cabarrocas : "Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures”. The Journal of Chemical Physics 140, 234706 (2014). http://dx.doi.org/10.1063/1.4883503

     

    1. S.N. Abolmasov, H.Woo, R. Planques, J. Holovsk´y, E.V. Johnson, A. Purkrt, and P. Roca i Cabarrocas: “Substrate and p-layer effects on polymorphous silicon solar cells”. EPJ Photovoltaics 5 (2014) 55206. DOI: 10.1051/epjpv/2014007

     

    1. Romain Cariou, Rosa Ruggeri, Tan Xi, Giovanni Mannino, Joaquim Nassar and Pere Roca i Cabarrocas : " Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates”. AIP Advances 4 (2014) 077103. 10.1063/1.4886774. http://dx.doi.org/10.1063/1.4886774.

     

    1. Aomar Hadjadj, Fadila Larbi, Mickaël Gilliot, and Pere Roca i Cabarrocas: “Etching of a-Si:H thin films by hydrogen plasma: a view from in situ spectroscopic ellipsometry”. Journal of Chemical Physics 141(2014) 084708. http://dx.doi.org/10.1063/1.4893558.

     

    1. A. S. Togonal, Lining He, Pere Roca i Cabarrocas, and Rusli: “Effect of Wettability on the Agglomeration of Silicon Nanowire Arrays Fabricated by Metal-Assisted Chemical Etching”. Langmuir  (2014) . dx.doi.org/10.1021/la501768f.

     

    1. Soumyadeep Misra, Linwei Yu, Wanghua Chen, Martin Foldyna and Pere Roca i Cabarrocas: “A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells”. J. Phys. D: Appl. Phys. 47 (2014) 393001. doi:10.1088/0022-3727/47/39/393001

     

    1. C. Charpentier, R. Boukhicha, P. Prod'homme, T. Emeraud, J.-F. Lerat, P. Roca i Cabarrocas, and E.V. Johnson:  “Evolution in Morphological, Optical, and Electronic Properties of ZnO:Al Thin Films Undergoing a Laser Annealing and Etching Process"  Solar Energy Materials and Solar Cells 125 (2014) 223. http://dx.doi.org/10.1016/j.solmat.2014.02.027.

     

    1. Barbara Brudieu, A. Le Bris, J. Teisseire, F. Guillemot, G. Dantelle, S. Misra, P. Roca i Cabarrocas, F. Sorin, T. Gacoin : " Sol-gel route toward efficient and robust Distributed Bragg Reflector for light management applications”. Advanced Optical Materials (2014). http://dx.doi.org/10.1002/adom.201400292

     

    1. Linwei Yu, Mingkun Xu,  Jie Xu, Zhaoguo Xue, Zheng Fan, Gennaro Picardi, Franck Fortuna, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates”. Nano Letters 14 (2014)6469-6474. dx.doi.org/10.1021/nl503001g.

     

    1. Z. Mrázková, A. Torres-Rios, R. Ruggeri, M. Foldyna, K. Postava, J. Pištora, P. Roca i Cabarrocas: “In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe–Ni alloy substrate for photovoltaic applications”. Thin Solid Films 571 (2014) 749–755. http://dx.doi.org/10.1016/j.tsf.2014.06.009.

     

    1. Bastien Bruneau, Romain Cariou, Jean-Christophe Dornstetter, Michael Lepecq, Jean-Luc Maurice, Pere Roca i Cabarrocas, and Erik Johnson: “Ion Energy Threshold in Low Temperature Silicon Epitaxy for Thin Film Crystalline Photovoltaics”. IEEE Journal of Photovoltaics 4 (2014) 1361.

     

    1. C. Trompoukis, I. Abdo, R. Cariou, W. Chen, O. Deparis, V. Depauw, V. Dmitriev, E. Drouard, O. El Daif, M. Foldyna, E. Garcia-Caurel, B. Heidari, A. Herman, L. Lalouat, K. D. Lee, J. Liu, K. Lodewijks, F. Mandorlo, I. Massiot, A. Mayer, V. Mijkovic, J. Muller, R. Orobtchouk, G. Poulain, P. Prod’Homme, P. Roca i Cabarrocas, C. Seassal, I. Gordon, R. Mertens, J. Poortmans: “Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells”. Phys. Status Solidi A, 212 (2015) pp. 140-155.  DOI 10.1002/pssa.201431180.

     

    1. Antonín Fejfar, Matěj Hývl, AliakseiVetushka, Peter Pikna, Zdeňka Hájková, Martin Ledinský, Jan Kočka, Petr Klapetek, Aleš Marek, Andrea Maškvá, Jiří Vyskočil, Janis Merkel, Christiane Becker, Takashi Itoh, Soumyadeep Misra, Martin Foldyna, Linwei Yu, PereRoca i Cabarrocas: “Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers”. Solar Energy Materials and Solar Cells 135 (2015) 106-112. http://dx.doi.org/10.1016/j.solmat.2014.10.027

     

    1. R. Cariou, J. Tang, N. Ramay, R. Ruggeri, and P. Roca i Cabarrocas:  “Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells”. Solar Energy Materials and Solar Cells 134 (2015) 15-21.  http://dx.doi.org/10.1016/j.solmat.2014.11.018.

     

    1. S.N. Abolmasov and P. Roca i Cabarrocas: “In situ photoluminescence system for studying surface passivation in silicon heterojunction solar cells”. J. Vac. Sci. Technol. A 33 (2015) 021201. http://dx.doi.org/10.1116/1.4902014

     

    1. Zhongwei Yu, Shengyi Qian, Linwei Yu, Soumyadeep Misra, Pei Zhang, Junzhuan Wang, Yi Shi, Ling Xu, Jun Xu, Kunji Chen, and Pere Roca i Cabarrocas: “Boosting light emission from Si-based thin film over Si and SiO2 nanowires architecture”. Optics Express 23 (2015). DOI:10.1364/OE.23.005388.

     

    1. Mingkun Xu, Zhaoguo Xue, Linwei Yu, Shengyi Qian, Zheng Fan, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “Operating principles of in-plane silicon nanowires at simple step-edges”. Nanoscale (2015). DOI: 10.1039/C4NR06531J

     

    1. I. Cosme, R.Cariou, W.Chen, M.Foldyna, R.Boukhicha, P. Roca i Cabarrocas, K.D. Lee , C.Trompoukis, V.Depauw: “Lifetime  assessment in crystalline silicon: From na nopatterned wafer to ultra-thin crystalline films for solar cells”. Solar Energy Materials and Solar Cells 135 (2015) 93. http://dx.doi.org/10.1016/j.solmat.2014.10.019.

     

    1. A. Defresne, O. Plantevin, I.P. Sobkowicz, J. Bourçois, P. Roca i Cabarrocas: “Interface defects in a-Si:H/c-Si heterojunction solar cells”. Nuclear Instruments and Methods in Physics Research B (2015). DOI 10.1016/j.nimb.2015.04.009

     

    1. S. Misra, L. Yu, M. Foldyna, P. Roca i Cabarrocas: ‘New approaches to improve the performance of radial junction thin film solar cells built over silicon nanowire arrays’, IEEE JPV, 5 (2015), 40. DOI 10.1109/JPHOTOV.2014.2366688

     

    1. Martin Müller, Matěj Hývl, Markus Kratzer, Christian Teichert, Soumyadeep Misra, Martin Foldyna, Linwei Yu, Pere Roca i Cabarrocas, Takashi Itoh, Zdeňka Hájková, Aliaksei Vetushka, Martin Ledinský, Jan Kočka, and Antonín Fejfar: “Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy”. Japanese Journal of Applied Physics 54, 08KA08 (2015). http://dx.doi.org/10.7567/JJAP.54.08KA08.

     

    1. Shengyi Qian, Soumyadeep Misra, Jiawen Lu, Zhongwei Yu, Linwei Yu, Jun Xu, Junzhuan Wang, Ling Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Full potential of radial junction Si thin film solar cells with advanced junction materials and design”. Appl. Phys. Lett. 107 (2015) 043902. http://dx.doi.org/10.1063/1.4926991.

     

    1. Jiawen Lu, Shengyi Qian, Zhongwei Yu, Soumyadeep Misra, Linwei Yu, Jun Xu, Yi Shi, Pere Roca i Cabarrocas, and Kunji Chen : “How tilting and cavity-mode-resonant absorption contribute to light harvesting in 3D radial junction solar cells”. Optics Express 23 (2015) AA1288.  DOI:10.1364/OE.23.0A1288 | OPTICS EXPRESS A1288

     

    1. Wanghua Chen, Philippe Pareige, Celia Castro, Tao Xu, Bruno Grandidier, Didier Stiévenard and Pere Roca i Cabarrocas : "Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires”. J. Appl. Phys. 118 (2015) 104301. http://dx.doi.org/10.1063/1.4930143

     

    1. Zhongwei Yu, Jiawen Lu, Shengyi Qian, Soumyadeep Misra, Linwei Yu, Jun Xu, Ling Xu, Junzhuan Wang, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells”. Appl. Phys. Lett. 107 (2015) 163105, http://dx.doi.org/10.1063/1.4933274

     

    1. Dennis Lange, Pere Roca i Cabarrocas, Nick Triantafyllidis, and Dmitri Daineka : “Piezoresistivity of thin film semiconductors with application to thin film silicon solar cells”. Solar Energy Materials and Solar Cells 145 (2015) pp 93-103. http://dx.doi.org/10.1016/j.solmat.2015.09.014.

     

    1. D. Murias, M. Moreno, C. Reyes-Betanzo, A. Torres, R. Ambrosio, P. Rosales, J. Martinez, I. Vivaldo, and P. Roca i Cabarrocas: “ Plasma-Texturing Processes and a-Si:H Surface Passivation on c-Si Wafers for Photovoltaic Applications”. Journal of Solar Energy Engineering, American Society of Mechanical Engineers, 137 (2015) 051010. DOI: 10.1115/1.4031105.

     

    1. R. Lachaume, R. Cariou, J. Decobert, M. Foldyna, G. Hamon, P. Roca i Cabarrocas, J. Alvarez, and J.-P. Kleider : "Performance analysis of AlGaAs/epi-Si(Ge) tandem solar cells: a simulation study”. Energy Procedia 84 (2015) pp. 41-46. doi: 10.1016/j.egypro.2015.12.293.

     

    1. Leon Hamui, B. Marel Monroy, Ka-Hyun Kim, Alejandra Lopez, Jaime Santoyo, PhD.; Maximo Lopez, Pere Roca i Cabarrocas, and Guillermo Santana Rodriguez: “Effect of Deposition Temperature on Polymorphous Silicon Thin Films by PECVD: Role of Hydrogen”. Materials Science in Semiconductor Processing 41 (2016)390–397. http://dx.doi.org/10.1016/j.mssp.2015.10.005.

     

    1. Aliénor Svietlana Togonal, Martin Foldyna, Wanghua Chen, Jian Xiong Wang, Vladimir Neplokh, Maria Tchernycheva, Joaquim Nassar, Pere Roca i Cabarrocas, and Rusli: “Core-Shell Heterojunction solar cells based on disordered silicon nanowire arrays”. The Journal of Physical Chemistry C (2016). DOI: 10.1021/acs.jpcc.5b09618.

     

    1. S. Abolmasov, P. Roca i Cabarrocas and P. Chatterjee: “Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions”. EPJ. Photovoltaics 7 (2016) 70302. DOI: 10.1051/epjpv/2015011.

     

    1. Prabal Goyal, Junegie Hong, Farah Haddad, Jean-Luc Maurice, Pere Roca i Cabarrocas, and Erik Johnson: “Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers”.  EPJ Photovoltaics 7 (2016) 70301. DOI: 10.1051/epjpv/2015010.

     

    1. Paul Narchi, Jose Alvarez, Pascal Chrétien, Gennaro Picardi, Romain Cariou, Martin Foldyna, Patricia Prod’homme, Jean-Paul Kleider, Pere Roca i Cabarrocas: “ Cross-sectional investigations on epitaxial silicon solar cells by Kelvin and Conducting Probe Atomic Fore Microscopy: Effect of illumination”. Nanoscale Research Letters (2016) DOI 10.1186/s11671-016-1268-1.

     

    1. Romain Cariou, Wanghua Chen, Ismael Cosme-Bolanos, Jean-Luc Maurice, Martin Foldyna, Valerie Depauw, Gilles Patriarche, Alexandre Gaucher, Andrea Cattoni, Ines Massiot, Stéphane Collin, Emmanuel Cadel, Philippe Pareige and Pere Roca i Cabarrocas : “Ultra-thin PECVD epitaxial Si solar cells on glass via low temperature transfer process”. Progress in Photovoltaics: Research and Applications 24 (2016) pp/ 1075-1084. DOI: 10.1002/pip.2762.

     

    1. Wanghua Chen, Romain Cariou, Martin Foldyna, Valerie Depauw, Christos Trompoukis, Emmanuel Drouard, Loic Lalouat, Abdelmounaim Harouri, Jia Liu, Alain Fave, Régis Orobtchouk, Fabien Mandorlo, Christian Seassal, Inès Massiot, Alexandre Dmitriev, Ki-Dong Lee and Pere Roca i Cabarrocas:  “Nanophotonics-based low temperature PECVD epitaxial crystalline silicon solar cells”. J. Phys. D: Appl. Phys. 49 (2016) 125603. doi:10.1088/0022-3727/49/12/125603. Selected by the Editorial Board of Journal of Physics D: Applied Physics for inclusion in the exclusive ‘Highlights of 2016’ collection.

     

    1. F. Lebreton, S.N. Abolmasov, F. Silva, and P. Roca i Cabarrocas: “In situ PL study of plasma-induced damage at the a-Si:H/c-Si interface”. Appl. Phys. Lett. 108 (2016) 051603. doi: 10.1063/1.4941298.

     

    1. Wanghua Chen, Martin Foldyna, Gilles Poulain, and Pere Roca i Cabarrocas : “Excellent surface passivation and light trapping of crystalline Si via low temperature Si nanowire growth”. IEEE. J. of Photovoltaics 6 (2016) pp 823-829. DOI 10.1109/JPHOTOV.2016.2547585

     

    1. Zhaoguo Xue, Mingkun Xu, Xing Li, Jimmy Wang, Xiaofan Jiang, Xianlong Wei, Linwei Yu, Qing Chen, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “In-plane self-turning and twin dynamics renders large stretchability to mono-like zigzag silicon nanowire springs”. Advanced Functional Materials 26 (2016) pp. 5352-5359. DOI: 10.1002/ adfm.201600780.

     

    1. D. Murias, M. Moreno, C. Reyes-Betanzo, A. Torres, P. Rosales, J. Martínez, R. Ambrosio, P. Roca i Cabarrocas: “Effect Of The Substrate Temperature On The Plasma Texturing Process Of c-si Wafers For Black Silicon Solar Cells”. Phys. Status Solidi A (2016) . DOI 10.1002/pssa.201532954.

     

    1. Romain Cariou, Wanghua Chen, Jean-Luc Maurice, Jingwen Yu, Gilles Patriarche, Olivia Mauguin, Ludovic Largeau, Jean Decobert, and Pere Roca i Cabarrocas : "Low temperature PECVD epitaxial growth of silicon on GaAs : A new paradigm for III-V/Si integration". Scientific Reports 6 (2016) 25674. DOI: 10.1038/srep25674.

     

    1. W. Chen, Ph. Pareige, and P. Roca i Cabarrocas: “Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells". Appl. Phys. Lett.  108, (2016) 253110. doi: 10.1063/1.4954707.

     

    1. Olivier Plantevin, Alice Defresne and Pere Roca i Cabarrocas: “Suppression of the thermal quenching of photoluminescence in irradiated silicon heterojunction solar cells”. Physica Status Solidi A 7 (2016) 1964–1968. http://dx.doi.org/10.1002/pssa.201532997s.

     

    1. Wanghua Chen, Valerie Depauw, Farah Haddad, Jean-Luc Maurice and Pere Roca i Cabarrocas : “Influence of anodic bonding on the surface passivation quality of crystalline silicon”. Solar Energy Materials and Solar Cells 157 (2016)154–160. http://dx.doi.org/10.1016/j.solmat.2016.05.031.

     

    1. Ka-Hyun Kim, Erik V. Johnson, and Pere Roca i Cabarrocas: “Light-induced changes in hydrogenated polymorphous silicon solar cells: modification of silicon-hydrogen bonding on silicon nanocrystal surface under illumination”. Jpn. J. Appl. Phys. 55, (2016) 072302. http://doi.org/10.7567/JJAP.55.072302.

     

    1. Tatiana Novikova, Bernard Drévillon, Laurent Schwartz, Pierre Validire, André Nazac, Razvigor Ossikovski, Enric Garcia-Caurel, Blandine Laude-Boulesteix, Makrina Anastasiadou, Maria Losurdo, Kurt Hinderl, Bicher Haj Ibrahim, Maria-Rosaria Antonelli, Angelo Pierangelo, Stanislas Deby, Stéphane Roussel, Sandeep Manhas, Jérémy Vizet, Dominique Pagnoux, Stéphane Bancelin, Marie-Claire Schanne-Klein, Jean Rehbinder, Huda Haddad, François Moreau, Jean-Charles Vanel, Pere Roca i Cabarrocas, Valery Tuchin, and Steven Jacques. Journal of Biomedical Optics 21 (2016) 071101. doi: 10.1117/1.JBO.21.7.071101.

     

    1. Wanghua Chen and Pere Roca i Cabarrocas: “Insights into gold-catalyzed plasma-assisted CVD growth of silicon nanowires”. Appl. Phys. Lett. 109 (2016), 043108. http://dx.doi.org/10.1063/1.4960106.

     

    1. Zhaoguo Xue, Mingkun Xu, Yaolong Zhao, Jimmy Wang, Xiaofan Jiang, Linwei Yu, Junzhuan Wang, Jun Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation”.  Nature Communications 7 (2016) 12836. | DOI: 10.1038/ncomms12836.

     

    1. Alexandre Gaucher, Andrea Cattoni, Christophe Dupuis, Wanghua Chen, Romain Cariou, Martin Foldyna, Loic Lalouat, Emmanuel Drouard, Christian Seassal, Pere Roca i Cabarrocas, and Stéphane Collin: “Ultrathin epitaxial silicon solar cells with inverted nanopyramid arrays for efficient light trapping”. NanoLetters 16 (2016) pp 5358–5364. 10.1021/acs.nanolett.6b01240.

     

    1. Paul Narchi, Romain Cariou, Martin Foldyna, Patricia Prod’homme and Pere Roca i Cabarrocas: “Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin Probe Force Microscopy”. IEEE Journal of Photovoltaics  6 (2016) pp. 1576–1580. DOI: 10.1109/JPHOTOV.2016.2598258

     

    1. T. Kohut, K. Postava, Z. Mrazkova, M. Foldyna, P. Roca i Cabarrocas, M. Micica1, and J. Pištora: “Modeling of Mueller Matrix Response from Diffracting Structures”. J. of NanoScience and Nanotechology 16 (2016) pp. 7805-7809. doi:10.1166/jnn.2016.12553

     

    1. Jian Tang, Wanghua Chen, Jean-Luc Maurice, Soumyadeep Misra, Martin Foldyna, Erik Johnson and Pere Roca i Cabarrocas: “Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation”. Nanoscale Research Letters (2016) DOI 10.1186/s11671-016-1681-5.

     

    1. Farah Haddad, Prabal Goyal, Erik V. Johnson, Junegie Hong, Pere Roca i Cabarrocas and Jean-Luc Maurice: “Quasi-fivefold symmetric electron diffraction patterns due to multiple twinning in silicon thin films grown from hexamethyldisiloxane”. Journal of Applied Crystallography 49 (2016) 2226. https://doi.org/10.1107/S1600576716016848.

     

    1. M. Foldyna, Alienor Svietlana Togonal, Rusli, and Pere Roca i Cabarrocas: “Optimization and optical characterization of vertical nanowire arrays for core-shell structure solar cells”. Solar Energy Materials and Solar Cells 159 (2016) pp 640-648. http://dx.doi.org/10.1016/j.solmat.2016.06.014.  

     

    1. Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, Pere Roca i Cabarrocas, Jean-Paul Kleider, Fei Yao, and Young Hee Lee: “Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures”. J.  Phys.: Condensed Matter. 28 (2016) 404001. doi:10.1088/0953-8984/28/40/404001.

     

    1. Mingkun Xu, Zhaoguo Xue, Jimmy Wang,Yaolong Zhao,Yao Duan, Guangyao Zhu, Linwei Yu, Jun Xu, Junzhuan Wang, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Hetero-epitaxial writing of silicon-on-sapphire nanowires”. NanoLetters 16 (2016) pp 7317–7324. doi/abs/10.1021/acs.nanolett.6b02004.

     

    1. Prabal Goyal, Elias Urrejola, Junegie Hong, Julien Voillot, Pere Roca i Cabarrocas, and Erik Johnson: “Analysis of p-type SiOx layers as a boron diffusion source for n-type c-Si substrates”. Physica Status Solidi A 213 (2016) pp. 1760–1766. DOI 10.1002/pssa.201532912.

     

    1. Alice Defresne, Olivier Plantevin and Pere Roca i Cabarrocas: “Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation”. AIP Advances 6 (2016) 125107; doi: 10.1063/1.4971276.

     

    1. R. Lachaume1, M. Foldyna2, G. Hamon2,3, J. Decobert4, R. Cariou2,4, P. Roca i Cabarrocas2, J. Alvarez1 and J.-P. Kleider : "Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes”. Solar Energy Materials and Solar Cells 166 (2017) 276-285. http://dx.doi.org/10.1016/j.solmat.2016.11.023

     

    1. Paul Narchi, Vladimir Neplokh, Valerio Piazza, Twan Bearda, Fabien Bayle, Martin Foldyna, Chiara Toccafondi, Patricia Prod’homme, Maria Tchernycheva, and Pere Roca i Cabarrocas : “Surface potential investigation on interdigitated back contact solar cells by scanning electron microscopy and Kelvin probe force microscopy: effect of electrical bias”. Solar Energy Materials and Solar Cells”. Solar Energy Materials and Solar Cells 161 (2017) pp 263-269.

     

    1. Ka-Hyun Kim, Erik V. Johnson, and Pere Roca i Cabarrocas: “Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism”. Solar Energy 143 (2017) pp 86-92. http://dx.doi.org/10.1016/j.solener.2016.12.030.

     

    1. Ka-Hyun Kim, Erik V. Johnson, Andrei Kazanskii, Mark V. Khenkin, and Pere Roca i Cabarrocas: “Synthesis of silicon nanocrystals in silane plasma and their contribution to growth of polymorphous silicon thin films”. Sci. Reports 7 (2017) 40553. DOI: 10.1038/srep40553.

     

    1. Ronan Léal, Farah Haddad, Gilles Poulain, Jean-Luc Maurice, and Pere Roca i Cabarrocas : “High quality boron doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells”. AIP Advances 7, 025006 (2017); doi: 10.1063/1.4976685.

     

    1. W. Chen, Romain Cariou, Gwenaëlle Hamon, Ronan Léal, Jean-Luc Maurice, and Pere Roca i Cabarrocas : “Influence of deposition rate on the properties of plasma-enhanced CVD epitaxial silicon”. Sci Reports 7 (2017) 43968. DOI: 10.1038/srep43968.

     

    1. Ka-Hyun Kim, Erik V. Johnson, and Pere Roca i Cabarrocas: “Evolution of microstructure and incorporation of excess hydrogen during the growth of hydrogenated polymorphous silicon at high rate”. Journal of NanoScience and Nanotechnology 17 (2017) pp. 4920-4925. doi:10.1166/jnn.2017.14281.

     

    1. Mingkun Xu, Jimmy Wang, Zhaoguo Xue, Junzhuan Wang, Ping Feng, Linwei Yu, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics”. NanoScale 9 (2017) 10350-10357. DOI: 10.1039/C7NR02825C.

     

    1. Valérie Depauw, Christos Trompoukis, Ines Massiot, Wanghua Chen,
      Alexandre Dmitriev, Pere Roca i Cabarrocas, Ivan Gordon, Jef Poortmans : “Sunlight-thin nanophotonic monocrystalline silicon solar cells”. Nano Futures 1 (2017) 021001. https://doi.org/10.1088/2399-1984/aa7d7c. Highlighted in the Inaugural highlights issue of Nano Futures, Feb 2018.

     

    1. Z. Mrazkova, M. Foldyna, S. Misra, M. Al-Ghzaiwat, K. Postava, J. Pištora, and P. Roca i Cabarrocas: “In-situ Mueller matrix ellipsometry of silicon nanowires grown by plasma enhanced vapor-liquid-solid method for radial junction solar cells”. Appl. Surf. Sci 421 (2017) 667. http://dx.doi.org/10.1016/j.apsusc.2016.12.199.

     

    1. Gwenaëlle Hamon, Nicolas Vaissiere, Romain Cariou, Raphaël Lachaume, José Alvarez, Wanghua Chen, Jean Paul Kleider, Jean Decobert, and Pere Roca i Cabarrocas : "Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells”. J. Photon. Energy 7(2), 022504 (2017), doi: 10.1117/1.JPE.7.022504.

     

    1. Stephen J. Fonash, Wook Jun Nam, Jean-Christophe Dornstetter, Mutaz Al-Ghzaiwat, Martin Foldyna, and Pere Roca i Cabarrocas: "A Solar Cell Architecture for Enhancing Performance while Reducing Absorber Thickness, and Back Contact Optical Losses". IEEE J. of Photovoltaics 7 (2017) 2156 . doi.10.1109/JPHOTOV.2017.2703854

     

    1. Jian Tang, J.-L. Maurice, F. Fossard, I. Florea, W. Chen, E.V. Johnson, M. Foldyna, L. Yu and P. Roca i Cabarrocas: “Natural occurrence of the diamond hexagonal structure in silicon nanowires grown by plasma assisted vapour-liquid-solid method”. Nanoscale 9 (2017) 8113. DOI: 10.1039/c7nr01299c.

     

    1. Itaru Raifuku, Yasuaki Ishikawa, Tiphaine Bourgeteau, Yvan Bonnassieux, Pere Roca i Cabarrocas, and Yukiharu Uraoka: “Fabrication of perovskite solar cells using sputter-processed CH3NH3PbI3 films”. Applied Physics Express 10, 094101 (2017). https://doi.org/10.7567/APEX.10.094101.

     

     

    1. Fabien Lebreton, Raphaël Lachaume, Pavel Bulkin, François Silva, Sergej A. Filonovich, Erik V. Johnson, Pere Roca i Cabarrocas : " Deleterious electrostatic interaction in silicon passivation stack between thin ALD Al2O3 and its a‑SiNX:H capping layer: numerical and experimental evidences”. Energy Procedia 124 (2017) pp 91-98.

     

    1. Wanghua Chen, Gwenaelle Hamon, Ronan Leal, Jean-Luc Maurice, Ludovic Largeau, and Pere Roca i Cabarrocas: “Growth of tetragonal Si via plasma-enhanced epitaxy”. Crystal Growth and Design 201717 (8), pp 4265–4269.DOI: 10.1021/acs.cgd.7b00601.

     

    1. Fan Yang, Junzhuan Wang, Jiawen Lu, Zhongwei Yu, Linwei Yu, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “Biomimetic Radial Tandem Junction Photodetector with Natural RGB Color Discrimination Capability”. Advanced Optical Materials 5 (2017) 1700390. DOI: 10.1002/adom.201700390. Cover page of the journal http://onlinelibrary.wiley.com/doi/10.1002/adom.v5.19/issuetoc

     

    1. Zheng Fan, Jean-Luc Maurice, Wanghua Chen, Stéphane Guilet, Edmond Cambril, Xavier Lafosse, Laurent Couraud, Kamel Merghem, Linwei Yu, Sophie Bouchoule, Pere Roca i Cabarrocas": Hydrogen plasma exposure of In/ITO bilayers as an effective way for tailoring In nanoparticles size distribution”. Langmuir 33 (2017) pp 12114–12119   DOI: 10.1021/acs.langmuir.7b01743.

     

    1. Zhaoguo Xue, Mei Sun, Taige Dong, Zhiqiang Tang, Yaolong Zhao, Junzhuan Wang, Xianlong Wei, Linwei Yu, Qing Chen, Jun Xu, Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics”. NanoLetters 17 (2017)  pp 7638–7646 DOI: 10.1021/acs.nanolett.7b03658.

     

    1. N. Puspitosari, Christophe Longeaud, Raphaël Lachaume, Li Zeyu, Rusli, and Pere Roca i Cabarrocas  : “Comparison of FTPS performed on thin films and solar cells”.  Physica Status Solidi C: Current Topics in Solid State Physics 14 (2017) 1700165. DOI: 10.1002/pssc.201700165.

     

    1. Zhang Song, Tiphaine Bourgeteau, Raifuku Itaru, Yvan Bonnassieux, Erik Johnson, Yasuaki Ishikawa, Martin Foldyna, Pere Roca i Cabarrocas, Yukiharu Uraoka : “Structural study of NiOx thin films fabricated by radio frequency sputtering at low temperature. Thin Solid Films 646 (2018) 2009-2015, doi:10.1016/ j.tsf.2017.12.003.

     

    1. Jean-Maxime Orlac’h, Vincent Giovangigli, Tatiana Novikova, and Pere Roca i Cabarrocas : "Kinetic theory of two-temperature polyatomic plasmas”. Physica A: Statistical Mechanics and its Applications. 494 (2018) pp. 503 - 546. DOI 10.1016/j.physa.2017.11.151

     

    1. Parsathi Chatterjee and Pere Roca i Cabarrocas: “Role of N-type μc-SiOx:H as intermediate reflector in "micromorph" tandem solar cells”. AIP Advances 8 (2018) 015115. https://doi.org/10.1063/1.5005114.

     

    1. Mutaz Al-Ghzaiwat, Martin Foldyna, Takashi Fuyuki, Wanghua Chen, Erik V. Johnson, Jacques Meot, and Pere Roca i Cabarrocas: “Large Area Radial Junction Silicon Nanowire Solar Mini-Modules”. Sci. Reports (2018). DOI:10.1038/s41598-018-20126-5.

     

    1. Pablo A. Fernández Garrillo, Paul Narchi,  Pere Roca i Cabarrocas, Benjamin Grévin, and Łukasz Borowik: “Comments on Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy”. IEEE Journal of Photovoltaics 8 (2018) 661. DOI: 10.1109/JPHOTOV.2018.2793760.

     

    1. Zuzana Mrazkova, Igor Paul Sobkowicz, Martin Foldyna, Kamil Postava, Ileana Florea, Jaromír Pištora and Pere Roca i Cabarrocas : " Optical properties and performance of pyramidal texture silicon heterojunction solar cells: Key role of vertex angles”. Progress in Photovoltaics Research and Applications (2018). DOI: 10.1002/pip.2994

     

    1. R. Jiménez, M. Moreno, A. Torres, P. Rosales, V. Gomez, N. Carlos, P. Roca i Cabarrocas: “Effect of pressure and flow rates on polymorphous silicon-germanium (pm-SixGe1-x:H) thin films for infrared detection applications”. Phys. Status Solidi A 2018, 1700735. DOI: 10.1002/pssa.201700735.

     

    1.  Zeyu Li, Rusli, Martin Foldyna, Junkang Wang, Wanghua Chen, Ari Bimo Prakoso, Chenjin Lu, and Pere Roca i Cabarrocas: “Nanostructured Back Reflectors produced using Polystyrene Assisted Lithography for Enhanced Light Trapping in Silicon Thin Film Solar Cells”. Solar Energy 167 (2018) pp 108-115.

     

    1. Lukas Halagacka, Martin Foldyna, Ronan Léal and Pere Roca i Cabarrocas: “In-situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth”. Photonics and Nanostructures - Fundamentals and Applications 30 (2018) pp. 73-77. https://doi.org/10.1016/j.photonics.2018.04.011.

     

    1. Wanghua Chen, Jean-Luc Maurice, Jean-Charles Vanel and Pere Roca i Cabarrocas : "Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature”. J. Phys. D: Appl. Phys.   51 (2018) 235203.   https://doi.org/10.1088/1361-6463/aac1ea

     

    1. Li Zeyu, Rusli E, Chenjin Lu, Ari Bimo Prakoso, Martin Foldyna, Rasha Khoury, Pavel Bulkin, Junkang Wang, Wanghua Chen, Erik Johnson, and Pere Roca i Cabarrocas:  “Optical study and experimental realization of nanostructured back reflectors with reduced parasitic losses for silicon thin film solar cells”. NanoMaterials 8 (2018) 626. Special Issue Design and Development of Nanostructured Thin Films.

     

    1. Letian Dai,  Isabelle Maurin, Martin Foldyna, José Alvarez, Weixi Wang, Hamza Mohsin, Wanghua Chen,  Jean-Paul Kleider,  Jean-Luc Maurice, Thierry Gacoin and Pere Roca i Cabarrocas : "Tin dioxide nanoparticles as catalyst precursors for plasma-assisted vapor-liquid-solid growth of silicon nanowires with well-controlled density”. Nanotechnology 29 (2018) 435301. https://doi.org/10.1088/1361-6528/aad7db.

     

    1. Xiaolin Sun, Ting Zhang, Fan Yang, Junzhuan Wang, Linwei Yu, Ling Xu, Jun Xu, Yi Shi, Kunji Chen and Pere Roca i Cabarrocas: “Firmly standing 3D radial junctions on soft aluminum foils enable extremely low cost flexible thin film solar cells with very high power-to-weight performance”. Nano Energy 53 (2018) pp. 83-90. https://doi.org/10.1016/j.nanoen.2018.08.038.

     

    1. Mutaz Al-Ghzaiwat, Antonino Foti, André Nuesslein, Lukáš Halagačka, Jacques Meot, Anne Labouret, Razvigor Ossikovski, Pere Roca i Cabarrocas, and Martin Foldyna: “Towards efficient radial junction silicon nanowire-based solar mini-modules”. Physica      Status Solidi Rapid Research Letters (2018) 1800402. DOI: 10.1002/pssr.201800402.

     

    1. Edy Azrak, Wanghua Chen, Simona Moldovan, Shiwen Gao, Sébastien Duguay, Philippe Pareige and Pere Roca i Cabarrocas: “Growth of In-Plane Ge1-xSnx nanowires with 22 at.% Sn using solid-liquid-solid mechanism”. The Journal of Physical Chemistry C 122 (2018), 26236−26242. DOI: 10.1021/acs.jpcc.8b07142.

     

    1. Yaolong Zhao, Taige Dong, Haiguang Ma, Junzhuan Wang, Linwei Yu,Jun Xu,Yi Shi, Kunji Chen, and Pere Roca i Cabarrocas: “Droplet-skipping dynamics that transforms amorphous bilayer coding into crystalline Ge/Si hetero island-chain superlattice”. Nano Letters. 18 (2018) 6931−6940. DOI: 10.1021/acs.nanolett.8b02847.
HAL Publications: 
TRUE

Hal

Publications HAL: 

2019

Article dans une revue

titre
Impact of charged species transport coefficients on self-bias voltage in an electrically asymmetric RF discharge
auteur
Jean-Maxime Orlac'H, Tatiana Novikova, Vincent Giovangigli, Erik Johnson, Pere Roca
article
Plasma Sources Science and Technology, IOP Publishing, 2019, 28 (5), pp.055003. ⟨10.1088/1361-6595/ab067d⟩
Accès au texte intégral et bibtex

https://hal.archives-ouvertes.fr/hal-01856184/file/article_arxiv.pdf


BibTex

2018

Article dans une revue

titre
Kinetic theory of two-temperature polyatomic plasmas
auteur
Jean-Maxime Orlac'H, Vincent Giovangigli, Tatiana Novikova, Pere Roca
article
Physica A: Statistical Mechanics and its Applications, Elsevier, 2018, 494, pp.503--546. ⟨10.1016/j.physa.2017.11.151⟩
Accès au texte intégral et bibtex

https://hal.archives-ouvertes.fr/hal-01618918/file/Article.pdf


BibTex

2014

Communication dans un congrès

titre
The Sense-City equipment project: 9M¤ for prototyping and validation of nanosensors for sustainable cities
auteur
Bérengère Lebental, François Derkx, Frédéric Bourquin, Tarik Bourouina, Bruno Mercier, Costel-Sorin Cojocaru, Pere Roca, Thi Lan Ha, Enric Robine
article
Nanotech, Jun 2014, France. 2 p
Accès au bibtex

BibTex

Enseignement: 

Cours :

PHY589 - Laboratory Course in Photovoltaics (2018-2019)

The aim of this course is to allow the students to have hands on experience in the fabrication and characterization of solar cells in a research environment. The courses will take place in the laboratory of physics of interfaces and thin films. Various aspects of solar energy will be covered:

i) the synthesis of silicon thin films by plasma enhanced chemical vapour deposition and the production of solar cells based on these layers,

ii) the synthesis and characterisation of solar cells based on organic semiconductors,

iii) the detailed characterization of various materials by complementary techniques (ellipsometry, Raman, AFM…) in order to qualify various aspects of materials for solar cells,

iv) the full characterization of solar cells (single junction PIN based on a-Si:H and µc-Si:H, amorphous/c-Si heterojunctions , tandem solar cells, CIS, GaAs…). In particular dark and light J-V characteristics and spectral response will be used to understand the physics behind these various devices.

 

This course is taught in English.

-------------------------------------------

L’objectif de cet Enseignement d’Approfondissement (EA) est de permettre aux élèves d’aborder de façon concrète le monde de l’énergie solaire photovoltaïque par des activités proches de la recherche. L’enseignement se déroulera au Laboratoire de Physique des Interfaces et de Couches Minces où on étudiera plusieurs aspects de l’énergie solaire :

i) la synthèse de couches minces de silicium amorphe et microcristallin par plasma froid et la réalisation de cellules solaires à base de ces matériaux,

ii) la réalisation et caractérisation de cellules solaires à base de matériaux organiques,

iii) la caractérisation de matériaux semi-conducteurs par diverses techniques complémentaires : ellipsométrie, spectroscopie Raman, AFM,… permettant leur qualification du point de vue des applications solaires,

iv) la caractérisation complète de cellules solaires : cellules PIN à base de silicium amorphe et microcristallin, cellules à hétérojonction amorphe/cristallin, cellules tandem et cellules à haut rendement à base de GaAs. En particulier, on mesurera leurs caractéristiques courant-tension à l’obscurité, sous éclairement, et leur rendement quantique.

Niveau requis : PHY430 - Physique quantique avancée et PHY433 - Physique statistique 1

Langue du cours : Anglais

Credits ECTS : 4




The aim of this course is to allow the students to have hands on experience in the fabrication and characterization of solar cells in a research environment. The courses will take place in the laboratory of physics of interfaces and thin films. Various aspects of solar energy will be covered:

i) the synthesis of silicon thin films by plasma enhanced chemical vapour deposition and the production of solar cells based on these layers,

ii) the synthesis and characterisation of solar cells based on organic semiconductors,

iii) the detailed characterization of various materials by complementary techniques (ellipsometry, Raman, AFM…) in order to qualify various aspects of materials for solar cells,

iv) the full characterization of solar cells (single junction PIN based on a-Si:H and µc-Si:H, amorphous/c-Si heterojunctions , tandem solar cells, CIS, GaAs…). In particular dark and light J-V characteristics and spectral response will be used to understand the physics behind these various devices.

 

This course is taught in English.

-------------------------------------------

L’objectif de cet Enseignement d’Approfondissement (EA) est de permettre aux élèves d’aborder de façon concrète le monde de l’énergie solaire photovoltaïque par des activités proches de la recherche. L’enseignement se déroulera au Laboratoire de Physique des Interfaces et de Couches Minces où on étudiera plusieurs aspects de l’énergie solaire :

i) la synthèse de couches minces de silicium amorphe et microcristallin par plasma froid et la réalisation de cellules solaires à base de ces matériaux,

ii) la réalisation et caractérisation de cellules solaires à base de matériaux organiques,

iii) la caractérisation de matériaux semi-conducteurs par diverses techniques complémentaires : ellipsométrie, spectroscopie Raman, AFM,… permettant leur qualification du point de vue des applications solaires,

iv) la caractérisation complète de cellules solaires : cellules PIN à base de silicium amorphe et microcristallin, cellules à hétérojonction amorphe/cristallin, cellules tandem et cellules à haut rendement à base de GaAs. En particulier, on mesurera leurs caractéristiques courant-tension à l’obscurité, sous éclairement, et leur rendement quantique.

Niveau requis : PHY430 - Physique quantique avancée et PHY433 - Physique statistique 1

Langue du cours : Anglais

Credits ECTS : 4

PHY597 - Energies (2018-2019)

Responsables :
Département de Physique
François Willaime - CEA Saclay - Mél : françContact - Tél : 01 64 50 17 88
Sylvain David - Institut de Physique nucléaire - Mél : Contact - Tél : 01 69 15 69 52
Pere Roca i Cabarrocas - Ecole Polytechnique - LPICM - Mél : Contact -
Tél : 01 69 33 43 14

Département de Mécanique
Patrick Le Tallec - Ecole Polytechnique - LMS - Mél. : Contact
Tél : 01 69 33 57 85

Stages du PA Energies du 21eme siècle :

L’objectif du stage est de mettre les élèves en contact avec la recherche dans le domaine de l’énergie telle qu'elle se pratique dans les laboratoires français ou étrangers de physique, d’énergétique, de mécanique, ou bien au sein d'entreprises nationales ou internationales.

Les responsables publient un catalogue de propositions de stages et sont à votre disposition pour vous donner toutes les précisions sur chacun des sujets envisagés et les infléchir éventuellement selon vos goûts. Ils vous conseilleront de la même façon sur les sujets de stages que vous trouverez par vos propres démarches. De manière à pouvoir en tirer le meilleur profit, les élèves peuvent également se regrouper en binômes pour effectuer ces stages.

Compte tenu du temps de maturation nécessaire, il est important de choisir votre sujet et d'en discuter avec votre futur directeur de stage longtemps à l'avance. Il faut réfléchir au thème choisi bien avant le démarrage du stage.

A titre indicatif, voici des domaines d'activité dans lesquels des stages ont été effectués les années précédentes :

- les réacteurs à fission
- la fusion thermonucléaire
- les déchets
- le nucléaire de génération 4
- le photovoltaïque
- l’énergie hydraulique ou éolienne
- les énergies renouvelables
- émission et mesures de CO2
- l’économie de l’énergie
- le solaire thermique
- le stockage de l’énergie
- recherche et développement sur l’hydrogène
- perspectives des voitures électriques
- les écoulements dans les systèmes énergétiques
- les matériaux résistants aux hautes températures
- les vibrations des systèmes d’exploitation offshore
- le dimensionnement mécanique des nouveaux systèmes de production d’énergie

La gamme des sujets proposés est fort étendue, même à l'intérieur de chaque domaine. Les sujets sont théoriques ou expérimentaux. Ils s’effectuent le plus souvent dans le cadre de laboratoires de recherche universitaires ou de laboratoires nationaux en France ou à l’étranger. Un nombre significatif de stages se déroule néanmoins dans des entreprises de taille variable, mais ayant toutes un secteur important de recherche et développement dans le domaine de l’énergie.

On insiste sur le caractère scientifique de ce stage. Il ne peut pas se réduire à des études de comparaison de logiciels, à des compilations technico-économiques ou à des développements de petits modèles autonomes ne se référant pas à une démarche scientifique globale.

L’option est animée par quatre enseignants que vous pouvez largement consulter et qui ont en particulier des éclairages privilégiés sur les thèmes suivants :
François Willaime et Sylvain David : énergie nucléaire, énergies durables, nouvelles technologies
Patrick Le Tallec : mécanique et matériaux pour l'énergie
Pere Roca : énergie solaire photovoltaïque

Langue du cours : Français

Credits ECTS : 20

PHY661A - Thin-Film Photovoltaics (PV II) (2018-2019)

Eligibility/Pre- requisites 

Physics of Solar Cell Devices (or equivalent course in basics of semiconductors and P/N junctions on crystalline silicon) 

Learning outcomes 

After the course the student should be able to:

  • Provide a critical view on thin film technologies and their position with respect to the leading crystalline silicon

  • Describe the operating principles of various types of solar cells structures: P-N junction, P-I-N, Heterojunction solar cells

  • Possess a detailed knowledge of thin film deposition processes and characterization techniques.

  • Determine the efficiency of solar cells based on their opto-electrical modeling

  • Understand the various steps involved in the value chain from materials to modules 

Course main content 

The course will focus on the two main families of materials at the basis of the second generation of solar cells, namely silicon thin films (amorphous, microcrystalline, thin film crystalline, and alloys with O, C and Ge) and chalcogenides (CdTe and CIGS). It will provide the basis for a deeper understanding of the materials used to build up the solar cells, their structural and electrical characterization, as well as provide the basis to foresee the future of thin film PV in a very competitive arena. Professors will present the solar cell technologies and give the elements of material science to understand both fundamental and technological aspects of Thin-Film Photovoltaics.

The course consists of 9 units of four hours divided as follows:

  • Lecture 1: Introduction to the physics of solar cells: basics of photovoltaic conversion, thermodynamics of light to electricity conversion, fundamental key properties of photovoltaic materials and basic device structures, limits of photovoltaic conversion

  • Lectures 2-3: Solar cells based on II-VI compounds and chalcogenides (CdTe and Copper indium gallium diselenide) : basics of polycrystalline compound semiconductors, devices, fabrication processes and manufacturing

  • Lectures 4-5: Silicon thin film technology: plasma enhanced chemical vapor deposition as a versatile tool to deposit silicon thin films and synthesize nanomaterials which are combined in various kinds of solar cell structures (homojunctions, heterojunctions, radial junction solar cells,...) in order to achieve high efficiency at low cost

  • Lecture 6: High efficiency concepts for solar cells: III-V and multijunctions materials and devices, up and down conversion, nanophotonics. The lecture will also include an introduction to modeling of solar cells

  • Lecture 7: Optical properties of solar cells: Students will learn from the basic concepts for the reduction of the spectral reflectance to more advanced nanostructures. In particular, the focus will be on periodic structures such as diffraction gratings or photonic crystals, the exploitation of one dimensional nanowires or metallic nanoantennas, progressive techniques based on plasmonic or photonic effects ... 

  • Lecture 8: Electronic characterization of thin films, based on examples from silicon thin films. 1) Measurements in planar configuration including dark conductivity vs temperature, steady-state photoconductivity, modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. 2) Measurements in diode configuration including admittance spectroscopy, quasi steady-state measurements as a function of bias, frequency and temperature, quasistatic capacitance and transient capacitance (ICTS and DLTS, photocapacitance). The principle of each technique and the use to extract material or interface parameters will be described

  • Lecture 9: Photovoltaic modules and systems: making modules out of cells; strategies for getting the maximum power out of the module thanks to power electronics; PV in isolated areas and related storage issues; grid connected systems 

Examination and requirements for final grade 

Students are evaluated based on a final written exam plus homework based on critical reading and presentation of research articles. Each student gets an article to review and present to the class. 

Coordinator Instructors 

Pere ROCA i CABARROCAS, Ecole polytechnique

Jean François GUILLEMOLES, Jean Paul KLEIDER, Martin FOLDYNA, Olivier BETHOUX 

Langue du cours : Anglais

Credits ECTS : 4




Eligibility/Pre- requisites 

Physics of Solar Cell Devices (or equivalent course in basics of semiconductors and P/N junctions on crystalline silicon) 

Learning outcomes 

After the course the student should be able to:

  • Provide a critical view on thin film technologies and their position with respect to the leading crystalline silicon

  • Describe the operating principles of various types of solar cells structures: P-N junction, P-I-N, Heterojunction solar cells

  • Possess a detailed knowledge of thin film deposition processes and characterization techniques.

  • Determine the efficiency of solar cells based on their opto-electrical modeling

  • Understand the various steps involved in the value chain from materials to modules 

Course main content 

The course will focus on the two main families of materials at the basis of the second generation of solar cells, namely silicon thin films (amorphous, microcrystalline, thin film crystalline, and alloys with O, C and Ge) and chalcogenides (CdTe and CIGS). It will provide the basis for a deeper understanding of the materials used to build up the solar cells, their structural and electrical characterization, as well as provide the basis to foresee the future of thin film PV in a very competitive arena. Professors will present the solar cell technologies and give the elements of material science to understand both fundamental and technological aspects of Thin-Film Photovoltaics.

The course consists of 9 units of four hours divided as follows:

  • Lecture 1: Introduction to the physics of solar cells: basics of photovoltaic conversion, thermodynamics of light to electricity conversion, fundamental key properties of photovoltaic materials and basic device structures, limits of photovoltaic conversion

  • Lectures 2-3: Solar cells based on II-VI compounds and chalcogenides (CdTe and Copper indium gallium diselenide) : basics of polycrystalline compound semiconductors, devices, fabrication processes and manufacturing

  • Lectures 4-5: Silicon thin film technology: plasma enhanced chemical vapor deposition as a versatile tool to deposit silicon thin films and synthesize nanomaterials which are combined in various kinds of solar cell structures (homojunctions, heterojunctions, radial junction solar cells,...) in order to achieve high efficiency at low cost

  • Lecture 6: High efficiency concepts for solar cells: III-V and multijunctions materials and devices, up and down conversion, nanophotonics. The lecture will also include an introduction to modeling of solar cells

  • Lecture 7: Optical properties of solar cells: Students will learn from the basic concepts for the reduction of the spectral reflectance to more advanced nanostructures. In particular, the focus will be on periodic structures such as diffraction gratings or photonic crystals, the exploitation of one dimensional nanowires or metallic nanoantennas, progressive techniques based on plasmonic or photonic effects ... 

  • Lecture 8: Electronic characterization of thin films, based on examples from silicon thin films. 1) Measurements in planar configuration including dark conductivity vs temperature, steady-state photoconductivity, modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. 2) Measurements in diode configuration including admittance spectroscopy, quasi steady-state measurements as a function of bias, frequency and temperature, quasistatic capacitance and transient capacitance (ICTS and DLTS, photocapacitance). The principle of each technique and the use to extract material or interface parameters will be described

  • Lecture 9: Photovoltaic modules and systems: making modules out of cells; strategies for getting the maximum power out of the module thanks to power electronics; PV in isolated areas and related storage issues; grid connected systems 

Examination and requirements for final grade 

Students are evaluated based on a final written exam plus homework based on critical reading and presentation of research articles. Each student gets an article to review and present to the class. 

Coordinator Instructors 

Pere ROCA i CABARROCAS, Ecole polytechnique

Jean François GUILLEMOLES, Jean Paul KLEIDER, Martin FOLDYNA, Olivier BETHOUX 

Langue du cours : Anglais

Credits ECTS : 4

PHY589 - Laboratory Course in Photovoltaics (2019-2020)

The aim of this course is to allow the students to have hands on experience in the fabrication and characterization of solar cells in a research environment. The courses will take place in the laboratory of physics of interfaces and thin films. Various aspects of solar energy will be covered:

i) the synthesis of silicon thin films by plasma enhanced chemical vapour deposition and the production of solar cells based on these layers,

ii) the synthesis and characterisation of solar cells based on organic semiconductors,

iii) the detailed characterization of various materials by complementary techniques (ellipsometry, Raman, AFM…) in order to qualify various aspects of materials for solar cells,

iv) the full characterization of solar cells (single junction PIN based on a-Si:H and µc-Si:H, amorphous/c-Si heterojunctions , tandem solar cells, CIS, GaAs…). In particular dark and light J-V characteristics and spectral response will be used to understand the physics behind these various devices.

 

This course is taught in English.

-------------------------------------------

L’objectif de cet Enseignement d’Approfondissement (EA) est de permettre aux élèves d’aborder de façon concrète le monde de l’énergie solaire photovoltaïque par des activités proches de la recherche. L’enseignement se déroulera au Laboratoire de Physique des Interfaces et de Couches Minces où on étudiera plusieurs aspects de l’énergie solaire :

i) la synthèse de couches minces de silicium amorphe et microcristallin par plasma froid et la réalisation de cellules solaires à base de ces matériaux,

ii) la réalisation et caractérisation de cellules solaires à base de matériaux organiques,

iii) la caractérisation de matériaux semi-conducteurs par diverses techniques complémentaires : ellipsométrie, spectroscopie Raman, AFM,… permettant leur qualification du point de vue des applications solaires,

iv) la caractérisation complète de cellules solaires : cellules PIN à base de silicium amorphe et microcristallin, cellules à hétérojonction amorphe/cristallin, cellules tandem et cellules à haut rendement à base de GaAs. En particulier, on mesurera leurs caractéristiques courant-tension à l’obscurité, sous éclairement, et leur rendement quantique.

Niveau requis : PHY430 - Physique quantique avancée et PHY433 - Physique statistique 1

Langue du cours : Anglais

Credits ECTS : 4




The aim of this course is to allow the students to have hands on experience in the fabrication and characterization of solar cells in a research environment. The courses will take place in the laboratory of physics of interfaces and thin films. Various aspects of solar energy will be covered:

i) the synthesis of silicon thin films by plasma enhanced chemical vapour deposition and the production of solar cells based on these layers,

ii) the synthesis and characterisation of solar cells based on organic semiconductors,

iii) the detailed characterization of various materials by complementary techniques (ellipsometry, Raman, AFM…) in order to qualify various aspects of materials for solar cells,

iv) the full characterization of solar cells (single junction PIN based on a-Si:H and µc-Si:H, amorphous/c-Si heterojunctions , tandem solar cells, CIS, GaAs…). In particular dark and light J-V characteristics and spectral response will be used to understand the physics behind these various devices.

 

This course is taught in English.

-------------------------------------------

L’objectif de cet Enseignement d’Approfondissement (EA) est de permettre aux élèves d’aborder de façon concrète le monde de l’énergie solaire photovoltaïque par des activités proches de la recherche. L’enseignement se déroulera au Laboratoire de Physique des Interfaces et de Couches Minces où on étudiera plusieurs aspects de l’énergie solaire :

i) la synthèse de couches minces de silicium amorphe et microcristallin par plasma froid et la réalisation de cellules solaires à base de ces matériaux,

ii) la réalisation et caractérisation de cellules solaires à base de matériaux organiques,

iii) la caractérisation de matériaux semi-conducteurs par diverses techniques complémentaires : ellipsométrie, spectroscopie Raman, AFM,… permettant leur qualification du point de vue des applications solaires,

iv) la caractérisation complète de cellules solaires : cellules PIN à base de silicium amorphe et microcristallin, cellules à hétérojonction amorphe/cristallin, cellules tandem et cellules à haut rendement à base de GaAs. En particulier, on mesurera leurs caractéristiques courant-tension à l’obscurité, sous éclairement, et leur rendement quantique.

Niveau requis : PHY430 - Physique quantique avancée et PHY433 - Physique statistique 1

Langue du cours : Anglais

Credits ECTS : 4

PHY597 - Energies (2019-2020)

Responsables :

Département de Physique
François Willaime - CEA Saclay - Mél : francContact - Tél : 01 64 50 17 88
Sylvain David - Institut de Physique Nucléaire d’Orsay - Mél : Contact - Tél : 01 69 15 69 52
Pere Roca i Cabarrocas - Ecole Polytechnique - LPICM - Mél : Contact - Tél : 01 69 33 43 14

Département de Mécanique
Patrick Le Tallec - Ecole Polytechnique - LMS - Mél. : Contact
Tél : 01 69 33 57 85

Stages du PA Energies du 21eme siècle :


L’objectif du stage est de mettre les élèves en contact avec la recherche dans le domaine de l’énergie telle qu'elle se pratique dans les laboratoires français ou étrangers de physique, d’énergétique, de mécanique, ou bien au sein d'entreprises nationales ou internationales.


Les responsables de l’option peuvent vous transmettre des propositions de stages et ils sont à votre disposition pour vous guider dans votre recherche de stage et vous conseiller sur les sujets de stages que vous trouverez par vos propres démarches. De manière à pouvoir en tirer le meilleur profit, les élèves peuvent également se regrouper en binômes pour effectuer ces stages.


Compte tenu du temps de maturation nécessaire, il est important de choisir votre sujet et d'en discuter avec votre futur directeur de stage longtemps à l'avance. Il faut réfléchir au thème choisi bien avant le démarrage du stage, en particulier pour les stages à l’étranger.

 

A titre indicatif, voici des domaines d'activité dans lesquels des stages ont été effectués les années précédentes :

- simulation du cycle du combustible des réacteurs nucléaires

- corrosion des aciers dans le circuit secondaire des centrales nucléaires

- la fusion thermonucléaire

- le photovoltaïque

- le solaire thermique

- production d’hydrogène par électrolyse de l’eau

- le biogaz

- systèmes de récupération de l’énergie des vagues

- émission, mesures ou stockage du CO2

- modélisation de la fracturation d’un réservoir pétrolier

- les changements de mode de consommation en chauffage

- électrification d’une grande ville en 100% renouvelable

- le stockage de l’énergie : durabilité et fiabilité des batteries Lithium ion

- intégration des énergies renouvelables dans les réseaux

- perspectives des voitures électriques

- les écoulements dans les systèmes énergétiques

- les matériaux résistants aux hautes températures

- dimensionnement et vibrations des systèmes d’exploitation offshore

 

La gamme des sujets est très étendue, même à l'intérieur de chaque domaine. Ils peuvent être théoriques, numériques ou expérimentaux. Ils s’effectuent le plus souvent dans le cadre de laboratoires de recherche universitaires ou de laboratoires nationaux en France ou à l’étranger. Un nombre significatif de stages (environ 40%) se déroulent néanmoins dans des entreprises de taille variable, mais ayant toutes un secteur important de recherche et développement dans le domaine de l’énergie. La Chaire Energies Durables peut apporter un soutien financier, plafonné à 2000 € par stage, pour couvrir des frais de stage à l’étranger (pour candidater, contacter le responsable de la Chaire, François Willaime).

On insiste sur le caractère scientifique de ce stage. Il ne peut pas se réduire à des études de comparaison de logiciels, à des compilations technico-économiques ou à des développements de petits modèles autonomes ne se référant pas à une démarche scientifique globale.


L’option est animée par quatre enseignants que vous pouvez largement consulter et qui ont en particulier des éclairages privilégiés sur les thèmes suivants :

Sylvain David : physique des réacteurs et du cycle du combustible nucléaire, physique de l’énergie, …

Patrick Le Tallec : mécanique et matériaux pour l'énergie, recherche technologique

Pere Roca : énergie solaire photovoltaïque, électronique pour l’énergie

François Willaime : nucléaire fission & fusion, énergies durables, physique des matériaux pour l’énergie, simulation numérique

 

Langue du cours : français ou anglais

Crédits ECTS : 20

 

PHY512L - EA PHY589 comme projet 3A (2019-2020)

PHY661A - Thin-Film Photovoltaics (PV II) (2019-2020)

Eligibility/Pre- requisites 

Physics of Solar Cell Devices (or equivalent course in basics of semiconductors and P/N junctions on crystalline silicon) 

Learning outcomes 

After the course the student should be able to:

  • Provide a critical view on thin film technologies and their position with respect to the leading crystalline silicon

  • Describe the operating principles of various types of solar cells structures: P-N junction, P-I-N, Heterojunction solar cells

  • Possess a detailed knowledge of thin film deposition processes and characterization techniques.

  • Determine the efficiency of solar cells based on their opto-electrical modeling

  • Understand the various steps involved in the value chain from materials to modules 

Course main content 

The course will focus on the two main families of materials at the basis of the second generation of solar cells, namely silicon thin films (amorphous, microcrystalline, thin film crystalline, and alloys with O, C and Ge) and chalcogenides (CdTe and CIGS). It will provide the basis for a deeper understanding of the materials used to build up the solar cells, their structural and electrical characterization, as well as provide the basis to foresee the future of thin film PV in a very competitive arena. Professors will present the solar cell technologies and give the elements of material science to understand both fundamental and technological aspects of Thin-Film Photovoltaics.

The course consists of 9 units of four hours divided as follows:

  • Lecture 1: Introduction to the physics of solar cells: basics of photovoltaic conversion, thermodynamics of light to electricity conversion, fundamental key properties of photovoltaic materials and basic device structures, limits of photovoltaic conversion

  • Lectures 2-3: Solar cells based on II-VI compounds and chalcogenides (CdTe and Copper indium gallium diselenide) : basics of polycrystalline compound semiconductors, devices, fabrication processes and manufacturing

  • Lectures 4-5: Silicon thin film technology: plasma enhanced chemical vapor deposition as a versatile tool to deposit silicon thin films and synthesize nanomaterials which are combined in various kinds of solar cell structures (homojunctions, heterojunctions, radial junction solar cells,...) in order to achieve high efficiency at low cost

  • Lecture 6: High efficiency concepts for solar cells: III-V and multijunctions materials and devices, up and down conversion, nanophotonics. The lecture will also include an introduction to modeling of solar cells

  • Lecture 7: Optical properties of solar cells: Students will learn from the basic concepts for the reduction of the spectral reflectance to more advanced nanostructures. In particular, the focus will be on periodic structures such as diffraction gratings or photonic crystals, the exploitation of one dimensional nanowires or metallic nanoantennas, progressive techniques based on plasmonic or photonic effects ... 

  • Lecture 8: Electronic characterization of thin films, based on examples from silicon thin films. 1) Measurements in planar configuration including dark conductivity vs temperature, steady-state photoconductivity, modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. 2) Measurements in diode configuration including admittance spectroscopy, quasi steady-state measurements as a function of bias, frequency and temperature, quasistatic capacitance and transient capacitance (ICTS and DLTS, photocapacitance). The principle of each technique and the use to extract material or interface parameters will be described

  • Lecture 9: Photovoltaic modules and systems: making modules out of cells; strategies for getting the maximum power out of the module thanks to power electronics; PV in isolated areas and related storage issues; grid connected systems 

Examination and requirements for final grade 

Students are evaluated based on a final written exam plus homework based on critical reading and presentation of research articles. Each student gets an article to review and present to the class. 

Coordinator Instructors 

Pere ROCA i CABARROCAS, Ecole polytechnique

Daniel Suchet, Jean Paul KLEIDER, Stéphane Collin, Olivier BETHOUX, Nicolas Barreau, Marie Gueunier-Farret,  Arouna Darga

Langue du cours : Anglais

Credits ECTS : 4




Eligibility/Pre- requisites 

Physics of Solar Cell Devices (or equivalent course in basics of semiconductors and P/N junctions on crystalline silicon) 

Learning outcomes 

After the course the student should be able to:

  • Provide a critical view on thin film technologies and their position with respect to the leading crystalline silicon

  • Describe the operating principles of various types of solar cells structures: P-N junction, P-I-N, Heterojunction solar cells

  • Possess a detailed knowledge of thin film deposition processes and characterization techniques.

  • Determine the efficiency of solar cells based on their opto-electrical modeling

  • Understand the various steps involved in the value chain from materials to modules 

Course main content 

The course will focus on the two main families of materials at the basis of the second generation of solar cells, namely silicon thin films (amorphous, microcrystalline, thin film crystalline, and alloys with O, C and Ge) and chalcogenides (CdTe and CIGS). It will provide the basis for a deeper understanding of the materials used to build up the solar cells, their structural and electrical characterization, as well as provide the basis to foresee the future of thin film PV in a very competitive arena. Professors will present the solar cell technologies and give the elements of material science to understand both fundamental and technological aspects of Thin-Film Photovoltaics.

The course consists of 9 units of four hours divided as follows:

  • Lecture 1: Introduction to the physics of solar cells: basics of photovoltaic conversion, thermodynamics of light to electricity conversion, fundamental key properties of photovoltaic materials and basic device structures, limits of photovoltaic conversion

  • Lectures 2-3: Solar cells based on II-VI compounds and chalcogenides (CdTe and Copper indium gallium diselenide) : basics of polycrystalline compound semiconductors, devices, fabrication processes and manufacturing

  • Lectures 4-5: Silicon thin film technology: plasma enhanced chemical vapor deposition as a versatile tool to deposit silicon thin films and synthesize nanomaterials which are combined in various kinds of solar cell structures (homojunctions, heterojunctions, radial junction solar cells,...) in order to achieve high efficiency at low cost

  • Lecture 6: High efficiency concepts for solar cells: III-V and multijunctions materials and devices, up and down conversion, nanophotonics. The lecture will also include an introduction to modeling of solar cells

  • Lecture 7: Optical properties of solar cells: Students will learn from the basic concepts for the reduction of the spectral reflectance to more advanced nanostructures. In particular, the focus will be on periodic structures such as diffraction gratings or photonic crystals, the exploitation of one dimensional nanowires or metallic nanoantennas, progressive techniques based on plasmonic or photonic effects ... 

  • Lecture 8: Electronic characterization of thin films, based on examples from silicon thin films. 1) Measurements in planar configuration including dark conductivity vs temperature, steady-state photoconductivity, modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. 2) Measurements in diode configuration including admittance spectroscopy, quasi steady-state measurements as a function of bias, frequency and temperature, quasistatic capacitance and transient capacitance (ICTS and DLTS, photocapacitance). The principle of each technique and the use to extract material or interface parameters will be described

  • Lecture 9: Photovoltaic modules and systems: making modules out of cells; strategies for getting the maximum power out of the module thanks to power electronics; PV in isolated areas and related storage issues; grid connected systems 

Examination and requirements for final grade 

Students are evaluated based on a final written exam plus homework based on critical reading and presentation of research articles. Each student gets an article to review and present to the class. 

Coordinator Instructors 

Pere ROCA i CABARROCAS, Ecole polytechnique

Jean François GUILLEMOLES, Jean Paul KLEIDER, Martin FOLDYNA, Olivier BETHOUX 

Langue du cours : Anglais

Credits ECTS : 4

Exemple d'un cours

Plan de continuité d'activité d'enseignement

PHY589 - Laboratory Course in Photovoltaics (2020-2021)

The aim of this course is to allow the students to have hands on experience in the fabrication and characterization of solar cells in a research environment. The courses will take place in the laboratory of physics of interfaces and thin films. Various aspects of solar energy will be covered:

i) the synthesis of silicon thin films by plasma enhanced chemical vapour deposition and the production of solar cells based on these layers,

ii) the synthesis and characterisation of solar cells based on organic semiconductors,

iii) the detailed characterization of various materials by complementary techniques (ellipsometry, Raman, AFM…) in order to qualify various aspects of materials for solar cells,

iv) the full characterization of solar cells (single junction PIN based on a-Si:H and µc-Si:H, amorphous/c-Si heterojunctions , tandem solar cells, CIS, GaAs…). In particular dark and light J-V characteristics and spectral response will be used to understand the physics behind these various devices.

 

This course is taught in English.

-------------------------------------------

L’objectif de cet Enseignement d’Approfondissement (EA) est de permettre aux élèves d’aborder de façon concrète le monde de l’énergie solaire photovoltaïque par des activités proches de la recherche. L’enseignement se déroulera au Laboratoire de Physique des Interfaces et de Couches Minces où on étudiera plusieurs aspects de l’énergie solaire :

i) la synthèse de couches minces de silicium amorphe et microcristallin par plasma froid et la réalisation de cellules solaires à base de ces matériaux,

ii) la réalisation et caractérisation de cellules solaires à base de matériaux organiques,

iii) la caractérisation de matériaux semi-conducteurs par diverses techniques complémentaires : ellipsométrie, spectroscopie Raman, AFM,… permettant leur qualification du point de vue des applications solaires,

iv) la caractérisation complète de cellules solaires : cellules PIN à base de silicium amorphe et microcristallin, cellules à hétérojonction amorphe/cristallin, cellules tandem et cellules à haut rendement à base de GaAs. En particulier, on mesurera leurs caractéristiques courant-tension à l’obscurité, sous éclairement, et leur rendement quantique.

Niveau requis : PHY430 - Physique quantique avancée et PHY433 - Physique statistique 1

Langue du cours : Anglais

Credits ECTS : 4




The aim of this course is to allow the students to have hands on experience in the fabrication and characterization of solar cells in a research environment. The courses will take place in the laboratory of physics of interfaces and thin films. Various aspects of solar energy will be covered:

i) the synthesis of silicon thin films by plasma enhanced chemical vapour deposition and the production of solar cells based on these layers,

ii) the synthesis and characterisation of solar cells based on organic semiconductors,

iii) the detailed characterization of various materials by complementary techniques (ellipsometry, Raman, AFM…) in order to qualify various aspects of materials for solar cells,

iv) the full characterization of solar cells (single junction PIN based on a-Si:H and µc-Si:H, amorphous/c-Si heterojunctions , tandem solar cells, CIS, GaAs…). In particular dark and light J-V characteristics and spectral response will be used to understand the physics behind these various devices.

 

This course is taught in English.

-------------------------------------------

L’objectif de cet Enseignement d’Approfondissement (EA) est de permettre aux élèves d’aborder de façon concrète le monde de l’énergie solaire photovoltaïque par des activités proches de la recherche. L’enseignement se déroulera au Laboratoire de Physique des Interfaces et de Couches Minces où on étudiera plusieurs aspects de l’énergie solaire :

i) la synthèse de couches minces de silicium amorphe et microcristallin par plasma froid et la réalisation de cellules solaires à base de ces matériaux,

ii) la réalisation et caractérisation de cellules solaires à base de matériaux organiques,

iii) la caractérisation de matériaux semi-conducteurs par diverses techniques complémentaires : ellipsométrie, spectroscopie Raman, AFM,… permettant leur qualification du point de vue des applications solaires,

iv) la caractérisation complète de cellules solaires : cellules PIN à base de silicium amorphe et microcristallin, cellules à hétérojonction amorphe/cristallin, cellules tandem et cellules à haut rendement à base de GaAs. En particulier, on mesurera leurs caractéristiques courant-tension à l’obscurité, sous éclairement, et leur rendement quantique.

Niveau requis : PHY430 - Physique quantique avancée et PHY433 - Physique statistique 1

Langue du cours : Anglais

Credits ECTS : 4

PHY512L - EA PHY589 comme projet 3A (2020-2021)

PHY597 - Energies (2020-2021)

Responsables :

Département de Physique
François Willaime - CEA Saclay - Mél : francContact - Tél : 01 64 50 17 88
Sylvain David - Institut de Physique Nucléaire d’Orsay - Mél : Contact - Tél : 01 69 15 69 52
Pere Roca i Cabarrocas - Ecole Polytechnique - LPICM - Mél : Contact - Tél : 01 69 33 43 14

Département de Mécanique
Patrick Le Tallec - Ecole Polytechnique - LMS - Mél. : Contact
Tél : 01 69 33 57 85

Stages du PA Energies du 21eme siècle :


L’objectif du stage est de mettre les élèves en contact avec la recherche dans le domaine de l’énergie telle qu'elle se pratique dans les laboratoires français ou étrangers de physique, d’énergétique, de mécanique, ou bien au sein d'entreprises nationales ou internationales.


Les responsables de l’option peuvent vous transmettre des propositions de stages et ils sont à votre disposition pour vous guider dans votre recherche de stage et vous conseiller sur les sujets de stages que vous trouverez par vos propres démarches. De manière à pouvoir en tirer le meilleur profit, les élèves peuvent également se regrouper en binômes pour effectuer ces stages.


Compte tenu du temps de maturation nécessaire, il est important de choisir votre sujet et d'en discuter avec votre futur directeur de stage longtemps à l'avance. Il faut réfléchir au thème choisi bien avant le démarrage du stage, en particulier pour les stages à l’étranger.

 

A titre indicatif, voici des domaines d'activité dans lesquels des stages ont été effectués les années précédentes :

- simulation du cycle du combustible des réacteurs nucléaires

- corrosion des aciers dans le circuit secondaire des centrales nucléaires

- la fusion thermonucléaire

- le photovoltaïque

- le solaire thermique

- production d’hydrogène par électrolyse de l’eau

- le biogaz

- systèmes de récupération de l’énergie des vagues

- émission, mesures ou stockage du CO2

- modélisation de la fracturation d’un réservoir pétrolier

- les changements de mode de consommation en chauffage

- électrification d’une grande ville en 100% renouvelable

- le stockage de l’énergie : durabilité et fiabilité des batteries Lithium ion

- intégration des énergies renouvelables dans les réseaux

- perspectives des voitures électriques

- les écoulements dans les systèmes énergétiques

- les matériaux résistants aux hautes températures

- dimensionnement et vibrations des systèmes d’exploitation offshore

 

La gamme des sujets est très étendue, même à l'intérieur de chaque domaine. Ils peuvent être théoriques, numériques ou expérimentaux. Ils s’effectuent le plus souvent dans le cadre de laboratoires de recherche universitaires ou de laboratoires nationaux en France ou à l’étranger. Un nombre significatif de stages (environ 40%) se déroulent néanmoins dans des entreprises de taille variable, mais ayant toutes un secteur important de recherche et développement dans le domaine de l’énergie. La Chaire Energies Durables peut apporter un soutien financier, plafonné à 2000 € par stage, pour couvrir des frais de stage à l’étranger (pour candidater, contacter le responsable de la Chaire, François Willaime).

On insiste sur le caractère scientifique de ce stage. Il ne peut pas se réduire à des études de comparaison de logiciels, à des compilations technico-économiques ou à des développements de petits modèles autonomes ne se référant pas à une démarche scientifique globale.


L’option est animée par quatre enseignants que vous pouvez largement consulter et qui ont en particulier des éclairages privilégiés sur les thèmes suivants :

Sylvain David : physique des réacteurs et du cycle du combustible nucléaire, physique de l’énergie, …

Patrick Le Tallec : mécanique et matériaux pour l'énergie, recherche technologique

Pere Roca : énergie solaire photovoltaïque, électronique pour l’énergie

François Willaime : nucléaire fission & fusion, énergies durables, physique des matériaux pour l’énergie, simulation numérique

 

Langue du cours : français ou anglais

Crédits ECTS : 20

 

PHY661A - Thin-Film Photovoltaics (PV II) (2020-2021)

Eligibility/Pre- requisites 

Physics of Solar Cell Devices (or equivalent course in basics of semiconductors and P/N junctions on crystalline silicon) 

Learning outcomes 

After the course the student should be able to:

  • Provide a critical view on thin film technologies and their position with respect to the leading crystalline silicon

  • Describe the operating principles of various types of solar cells structures: P-N junction, P-I-N, Heterojunction solar cells

  • Possess a detailed knowledge of thin film deposition processes and characterization techniques.

  • Determine the efficiency of solar cells based on their opto-electrical modeling

  • Understand the various steps involved in the value chain from materials to modules 

Course main content 

The course will focus on the two main families of materials at the basis of the second generation of solar cells, namely silicon thin films (amorphous, microcrystalline, thin film crystalline, and alloys with O, C and Ge) and chalcogenides (CdTe and CIGS). It will provide the basis for a deeper understanding of the materials used to build up the solar cells, their structural and electrical characterization, as well as provide the basis to foresee the future of thin film PV in a very competitive arena. Professors will present the solar cell technologies and give the elements of material science to understand both fundamental and technological aspects of Thin-Film Photovoltaics.

The course consists of 9 units of four hours divided as follows:

  • Lecture 1: Introduction to the physics of solar cells: basics of photovoltaic conversion, thermodynamics of light to electricity conversion, fundamental key properties of photovoltaic materials and basic device structures, limits of photovoltaic conversion

  • Lectures 2-3: Solar cells based on II-VI compounds and chalcogenides (CdTe and Copper indium gallium diselenide) : basics of polycrystalline compound semiconductors, devices, fabrication processes and manufacturing

  • Lectures 4-5: Silicon thin film technology: plasma enhanced chemical vapor deposition as a versatile tool to deposit silicon thin films and synthesize nanomaterials which are combined in various kinds of solar cell structures (homojunctions, heterojunctions, radial junction solar cells,...) in order to achieve high efficiency at low cost

  • Lecture 6: High efficiency concepts for solar cells: III-V and multijunctions materials and devices, up and down conversion, nanophotonics. The lecture will also include an introduction to modeling of solar cells

  • Lecture 7: Optical properties of solar cells: Students will learn from the basic concepts for the reduction of the spectral reflectance to more advanced nanostructures. In particular, the focus will be on periodic structures such as diffraction gratings or photonic crystals, the exploitation of one dimensional nanowires or metallic nanoantennas, progressive techniques based on plasmonic or photonic effects ... 

  • Lecture 8: Electronic characterization of thin films, based on examples from silicon thin films. 1) Measurements in planar configuration including dark conductivity vs temperature, steady-state photoconductivity, modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. 2) Measurements in diode configuration including admittance spectroscopy, quasi steady-state measurements as a function of bias, frequency and temperature, quasistatic capacitance and transient capacitance (ICTS and DLTS, photocapacitance). The principle of each technique and the use to extract material or interface parameters will be described

  • Lecture 9: Photovoltaic modules and systems: making modules out of cells; strategies for getting the maximum power out of the module thanks to power electronics; PV in isolated areas and related storage issues; grid connected systems 

Examination and requirements for final grade 

Students are evaluated based on a final written exam plus homework based on critical reading and presentation of research articles. Each student gets an article to review and present to the class. 

Coordinator Instructors 

Pere ROCA i CABARROCAS, Ecole polytechnique

Jean François GUILLEMOLES, Jean Paul KLEIDER, Martin FOLDYNA, Olivier BETHOUX 

Langue du cours : Anglais

Credits ECTS : 4




Eligibility/Pre- requisites 

Physics of Solar Cell Devices (or equivalent course in basics of semiconductors and P/N junctions on crystalline silicon) 

Learning outcomes 

After the course the student should be able to:

  • Provide a critical view on thin film technologies and their position with respect to the leading crystalline silicon

  • Describe the operating principles of various types of solar cells structures: P-N junction, P-I-N, Heterojunction solar cells

  • Possess a detailed knowledge of thin film deposition processes and characterization techniques.

  • Determine the efficiency of solar cells based on their opto-electrical modeling

  • Understand the various steps involved in the value chain from materials to modules 

Course main content 

The course will focus on the two main families of materials at the basis of the second generation of solar cells, namely silicon thin films (amorphous, microcrystalline, thin film crystalline, and alloys with O, C and Ge) and chalcogenides (CdTe and CIGS). It will provide the basis for a deeper understanding of the materials used to build up the solar cells, their structural and electrical characterization, as well as provide the basis to foresee the future of thin film PV in a very competitive arena. Professors will present the solar cell technologies and give the elements of material science to understand both fundamental and technological aspects of Thin-Film Photovoltaics.

The course consists of 9 units of four hours divided as follows:

  • Lecture 1: Introduction to the physics of solar cells: basics of photovoltaic conversion, thermodynamics of light to electricity conversion, fundamental key properties of photovoltaic materials and basic device structures, limits of photovoltaic conversion

  • Lectures 2-3: Solar cells based on II-VI compounds and chalcogenides (CdTe and Copper indium gallium diselenide) : basics of polycrystalline compound semiconductors, devices, fabrication processes and manufacturing

  • Lectures 4-5: Silicon thin film technology: plasma enhanced chemical vapor deposition as a versatile tool to deposit silicon thin films and synthesize nanomaterials which are combined in various kinds of solar cell structures (homojunctions, heterojunctions, radial junction solar cells,...) in order to achieve high efficiency at low cost

  • Lecture 6: High efficiency concepts for solar cells: III-V and multijunctions materials and devices, up and down conversion, nanophotonics. The lecture will also include an introduction to modeling of solar cells

  • Lecture 7: Optical properties of solar cells: Students will learn from the basic concepts for the reduction of the spectral reflectance to more advanced nanostructures. In particular, the focus will be on periodic structures such as diffraction gratings or photonic crystals, the exploitation of one dimensional nanowires or metallic nanoantennas, progressive techniques based on plasmonic or photonic effects ... 

  • Lecture 8: Electronic characterization of thin films, based on examples from silicon thin films. 1) Measurements in planar configuration including dark conductivity vs temperature, steady-state photoconductivity, modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. 2) Measurements in diode configuration including admittance spectroscopy, quasi steady-state measurements as a function of bias, frequency and temperature, quasistatic capacitance and transient capacitance (ICTS and DLTS, photocapacitance). The principle of each technique and the use to extract material or interface parameters will be described

  • Lecture 9: Photovoltaic modules and systems: making modules out of cells; strategies for getting the maximum power out of the module thanks to power electronics; PV in isolated areas and related storage issues; grid connected systems 

Examination and requirements for final grade 

Students are evaluated based on a final written exam plus homework based on critical reading and presentation of research articles. Each student gets an article to review and present to the class. 

Coordinator Instructors 

Pere ROCA i CABARROCAS, Ecole polytechnique

Jean François GUILLEMOLES, Jean Paul KLEIDER, Martin FOLDYNA, Olivier BETHOUX 

Langue du cours : Anglais

Credits ECTS : 4

Renewable energies 2020/2021